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PAM8406 SKR710 SG3423A 12Z01 AC139 SSF2301 BR2020 A553M
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    NT511740C5J-70 NT511740C5J NT511740C5J-50 NT511740C5J-60

List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
ETC[ETC]
Part No. NT511740C5J-70 NT511740C5J NT511740C5J-50 NT511740C5J-60
OCR Text ...m e (M ax.) Fam ily NT511740C5J-50 NT511740C5J-60 NT511740C5J-70 t RA C tA A 50ns 25ns 60 ns 30 ns 70 ns 35 ns t CA C 13ns 15 ns 20 ns t O EA 13ns 15 ns 20 ns (M in.) 84ns 104 ns 124 ns Operation(M ax.) Standby(M ax.) 660m W 605m W 5.5 m W ...
Description The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTCs CMOS silicon gate technology. 该NT511740C5J194304字4位动态随机存储器的NTC热敏假的吗?拧CMOS硅栅技术

File Size 333.64K  /  18 Page

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    SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. HYB5118160BSJ-70 HYB5118160BSJ-60 HYB5118160BSJ-50 HB18160B Q67100-Q1074 Q67100-Q1072 Q67100-Q1073
OCR Text 50/-60/-70 Advanced Information * * * 1 048 576 words by 16-bit organization 0 to 70 C operating temperature Performance: -50 tRAC tCAC tAA tRC tPC RAS access time CAS access time Access time from address Read/Write cycle time Fast p...
Description From old datasheet system
1M x 16-Bit Dynamic RAM (1k-Refresh)

File Size 251.94K  /  24 Page

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    SIEMENS AG
Part No. HYB3116160BST-70 HYB3118160BST-70 HYB3116160BSJ-50 HYB3118160BSJ-50 HYB3116160BST-60 HYB3116160BSJ-60
OCR Text ...0 active mw ( hyb3118160bsj/bst-50) max. 648 active mw ( hyb3118160bsj/bst-60) max. 576 active mw ( hyb3118160bsj/bst-70) max. 360 active mw ( hyb3116160bsj/bst-50) max. 324 active mw ( hyb3116160bsj/bst-60) max. 288 active mw ( hyb3116160b...
Description 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh

File Size 261.06K  /  25 Page

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    BCP020T-70

BeRex Corporation
Part No. BCP020T-70
OCR Text ...p 1db (v ds = 6 v, i ds = 50% i dss ) 12 gh z 18 ghz 2 0. 0 2 1 .0 2 1.5 2 2 . 5 dbm g 1db gain @ p 1db (v ds =...70 electrical characteristic ( tuned for gain ) t a = 25 c symbols parameter/test ...
Description HIGH EFFICIENCY HETEROJUNCTION POWER FET (0.25μm x 200μm gate)

File Size 757.80K  /  6 Page

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    SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. HYM322160S-70 HYM322160S-60 HYM322160GS-60 HYM322160GS-70 HYM322160S 322160X Q67100-Q2017 Q67100-Q2014 Q67100-Q2015 Q67100-Q2016
OCR Text .................................. 50 mA Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage of the d...70 C, VCC = 5 V 10 % Parameter Input high voltage Input low voltage Output high voltage (IOUT = - 5...
Description 2M x 32-Bit Dynamic RAM Module 2M X 32 FAST PAGE DRAM MODULE, 70 ns, SMA72
From old datasheet system

File Size 140.39K  /  9 Page

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    MSM51V4256A-70 MSM51V4256A MSM51V4256A-10 MSM51V4256A-80

OKI electronic componets
Part No. MSM51V4256A-70 MSM51V4256A MSM51V4256A-10 MSM51V4256A-80
OCR Text ... 80 ns 45 ns 25 ns 25 ns 100 ns 50 ns 30 ns 30 ns Cycle Time Power Dissipation (Min.) Operating (Max.) Standby (Max.) 130 ns 150 ns 190 ns 1...70 -55 to 150 Unit V mA W C C *: Ta = 25C Recommended Operating Conditions Parameter Power Suppl...
Description 262,144-Word ′ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
262,144-Word ? 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE

File Size 238.14K  /  17 Page

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    SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. HYB5117805BSJ-70 HYB5117805BSJ-60 HYB5117805BSJ-50 HB17805B Q67100-Q1106 HYB5117805BJ-50 HYB5117805BJ-60 HYB5117805BJ-70 HYB5117805BSJ-50- Q67100-Q1104 Q67100-Q1105
OCR Text 50/-60/-70 2 097 152 words by 8-bit organization 0 to 70 C operating temperature Performance: -50 tRAC tCAC tAA tRC tHPC RAS access time CAS access time Access time from address Read/Write cycle time Hyper page mode (EDO) cycle time 50 1...
Description From old datasheet system
2M x 8 - Bit Dynamic RAM 2k Refresh (Hyper Page Mode- EDO)

File Size 256.00K  /  25 Page

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    BCP030T-70

BeRex Corporation
Part No. BCP030T-70
OCR Text ...p 1db (v ds = 6 v, i ds = 50% i dss ) 12 gh z 18 ghz 23.0 2 2 . 5 24 2 3 . 5 dbm g 1db gain @ p 1db (v ds = 6 ...70 60 % i dss saturated drain current (v gs = 0v, v ds = 2 .0v) 6 0 90 120 ...
Description HIGH EFFICIENCY HETEROJUNCTION POWER FET (0.25μm x 300μm gate)

File Size 758.22K  /  6 Page

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    BCP060T-70

BeRex Corporation
Part No. BCP060T-70
OCR Text ...p 1db (v ds = 6 v, i ds = 50% i dss ) 12 gh z 18 ghz 2 5.5 2 5.0 26.5 26.0 dbm g 1db gain @ p 1db (v ds = 6 v,...70 5 0 % i dss saturated drain current (v gs = 0v, v ds = 2 .0v) 1 2 0 180 2...
Description HIGH EFFICIENCY HETEROJUNCTION POWER FET

File Size 820.31K  /  6 Page

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    BCP080T-70

BeRex Corporation
Part No. BCP080T-70
OCR Text ...p 1db (v ds = 6 v, i ds = 50% i dss ) 12 gh z 18 ghz 2 6 . 0 2 6 .0 2 7 .5 27.5 dbm g 1db gain @ p 1db (v ds =...70 electrical characteristic ( tuned for gain ) t a = 25 c symbols parameter/test ...
Description HIGH EFFICIENCY HETEROJUNCTION POWER FET

File Size 750.36K  /  6 Page

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