4.9ghz pdf Datasheet P14 Full Text Search --- IC-ON-LINE


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4.9ghz Datasheet PDF File

For 4.9ghz Found Datasheets File :: 804 Search Time::1.625ms
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				Sanyo
Part No.	2SC4407
OCR Text	...) Marking : KY hFE rank : 2, 3, 4 * For CP package version, use the 2SC4270. 40 2 80 60 3 120 100 4 200 Any an...9GHz VCE=10V, IC=3mA, f=0.9GHz See specified Test Circuit. Ratings min typ 12 3.0 max Unit dB dB ...
Description	NPN Epitaxial Planar Silicon Transistor VHF/UHF Mixer, Local Oscillator Applications
File Size	104.55K / 5 Page	View it Online	Download Datasheet

				SONY[Sony Corporation]
Part No.	CXG7001FN
OCR Text	...H VDD (RF AMP) 23 13pF 24 4 13pF 3 1nF 25 100nF VDD (IF AMP, MIX) 1nF 26 82nH 5pF 2 18pF 1 1nF VDD (LO AMP) LOIN IFOUT ...9GHz by this capacitor (Typ. 13pF). GND. Connector for the external capacitor. IF AMP distortion is ...
Description	Power Amplifier/Antenna Switch Low Noise Down Conversion Mixer for PHS
File Size	115.10K / 8 Page	View it Online	Download Datasheet

				SIEMENS AG
Part No.	BFR182
OCR Text	...rent i c 35 ma base current i b 4 total power dissipation , t s 93 c f) p tot 250 mw junction temperature t j 150 c ambient temperatu...9ghz v ce = parameter 0 5 10 15 ma 25 i c 8 10 12 14 16 db 20 g 10v 3v 2v 1v 0.7v po...
Description	NPN Silicon RF Transistor(NPN 射频硅晶体管)
File Size	116.41K / 7 Page	View it Online	Download Datasheet

				Sanyo
Part No.	2SC4404
OCR Text	...) Marking : NY hFE rank : 2, 3, 4 * For CP package version, use the 2SC3774. 40 2 80 60 3 120 100 4 200 Any an...9GHz VCE=10V, IC=20mA, f=0.9GHz VCE=10V, IC=5mA, f=0.9GHz See specified Test Circuit. Ratings min ty...
Description	NPN Epitaxial Planar Silicon Transistor UHF Local Oscillator, Wide-Band Amplifier Applications
File Size	112.71K / 5 Page	View it Online	Download Datasheet

				SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-F1377 BFP180
OCR Text	...80 RDs Q62702-F1377 1=C 2=E 3=B 4=E Package SOT-143 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Coll...9GHz VCE = Parameter 20 10V dB Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 16 8V dB...
Description	NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) From old datasheet system
File Size	76.23K / 8 Page	View it Online	Download Datasheet

				SIEMENS AG
Part No.	BFR182W
OCR Text	...rent i c 35 ma base current i b 4 total power dissipation , t s 90 c f) p tot 250 mw junction temperature t j 150 c ambient temperatu...9ghz v ce = parameter 0 4 8 12 16 20 ma 26 i c 8 10 12 14 16 db 20 g 10v 3v 2v 1v 0....
Description	NPN Silicon RF Transistor(NPN 射频硅晶体管)
File Size	117.00K / 7 Page	View it Online	Download Datasheet

				MAXIM - Dallas Semiconductor Maxim Integrated Products, Inc.
Part No.	MAX2016 MAX2016ETI MAX2016ETID MAX2016ETITD MAX2016ETI-T
OCR Text	...INA+ RFINAGND COUTH CSETH 1 2 3 4 5 6 7 8 COR 9 VCC 10 SETD 11 OUTD 12 VCC 13 FV2 14 FV1 27 26 25 24 22 21 FB1 20 VCC 19 RFINB+ FB2 18 RFINB...9GHz RF Input Power Range 3dB Dynamic Range Range Center Temperature Sensitivity Slope Typical Slope...
Description	2.7 V to 5.25 V, LF-to-2.5 GHz dual logarithmic detector/controller for power, gain, and VSWR measurement LF-to-2.5GHz Dual Logarithmic Detector/ Controller for Power, Gain, and VSWR Measurements LF-to-2.5GHz Dual Logarithmic Detector/Controller for Power, Gain, and VSWR Measurements
File Size	398.91K / 19 Page	View it Online	Download Datasheet

				Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-F1490 BFR180W
OCR Text	...ipation Symbol Values 8 10 10 2 4 0.5 mW 30 150 - 65 ... + 150 - 65 ... + 150 790 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg ...9GHz VCE = Parameter 18 dB 16 10V 3V 2V Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter ...
Description	NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) From old datasheet system
File Size	56.55K / 7 Page	View it Online	Download Datasheet

				SIEMENS AG
Part No.	BFR182T
OCR Text	...rent i c 35 ma base current i b 4 total power dissipation , t s = 75 c f) p tot 250 mw junction temperature t j 150 c ambient temperature ...9ghz v ce = parameter 0 4 8 12 16 20 24 ma 32 i c 7 10 13 16 db 22 g 10v 5v 3v 2v 1v power ga...
Description	NPN Silicon RF Transistor(NPN 射频硅晶体管)
File Size	92.07K / 6 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BFS482 Q62702-F1573
OCR Text	...tion BFS 482 RGs Q62702-F1573 1/4 = B 2/5 = E 3/6 = C Package SOT-363 data below is of a single transistor Maximum Ratings Paramete...9GHz VCE = Parameter 22 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 14 8V dB 10V 5V...
Description	NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA.) 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR NPN Silicon RF Transistor (For low-noise/ high-gain broadband amplifiers at collector currents from 1mA to 20mA.) From old datasheet system
File Size	53.54K / 6 Page	View it Online	Download Datasheet

For 4.9ghz Found Datasheets File :: 804 Search Time::1.625ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |