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4.6mj Datasheet PDF File

For 4.6mj Found Datasheets File :: 141 Search Time::2.109ms
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				Infineon Technologies AG
Part No.	SPB12N50C305
OCR Text	4 page 1 spb12n50c3 cool mos? power transistor v ds @ t jmax 560 v r ds(on) 0.38 ? i d 11.6 a feature ? new revolutionary high voltage...6mj 10 4 10 5 10 6 hz f 0 50 100 150 200 w 300 p ar 18 typ. capacitances c = f ( v ds ) paramete...
Description	New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge
File Size	506.61K / 12 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SGB15N12007
OCR Text	... 2.5 - 3.1 3.7 3.6 4.3 gate-emitter threshold voltage v ge(th) i c =600 a, v ce = v ge 3 4 5 v zero gate voltage collec...6mj 8mj 10mj 12mj 14mj e on * e off e ts * e , switching energy losses 0 ? 25 ? 50 ? 75 ? 0mj 1...
Description	Fast IGBT in NPT-technology
File Size	834.91K / 11 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE2936
OCR Text	...+25C, IS = 9.6A, VGS = 0V, Note 4 TJ = +25C, IF = 14A, diF/dt = 100A/s, Note 4 VGS = 10V, ID = 14A, VDS = 400V, Note 4, Note 5 VDD = 250V, ID = 14A, RG = 6.2, Note 4, Note 5 VDS = 5V, ID = 250A VGS = 30V VGS = -30V VDS = 500V VDS = 400V, TC...
Description	MOSFET N-Channel, Enhancement Mode High Speed Switch
File Size	23.31K / 3 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SGD04N60
OCR Text	... c = 25 c t c = 100 c i c 9.4 4.9 pulsed collector current, t p limited by t jmax i cpuls 19 turn off safe operating area v ce 600...6mj e on * e off e ts * e , switching energy losses 0 ? 50 ? 100 ? 150 ? 200 ? 0.0mj 0.1mj 0.2mj 0....
Description	Fast S-IGBT in NPT-technology( NPT 技术中的快S-IGBT) 9.4 A, 600 V, N-CHANNEL IGBT, TO-252AA
File Size	271.27K / 12 Page	View it Online	Download Datasheet

				SIEMENS AG
Part No.	SGB15N120
OCR Text	...c t j =150 c 2.5 - 3.1 3.7 3.6 4.3 gate-emitter threshold voltage v ge(th) i c =600 a, v ce = v ge 345 v zero gate voltage collector curre...6mj 8mj 10mj 12mj 14mj e on * e off e ts * e , switching energy losses 0 ? 25 ? 50 ? 75 ? 0mj 1mj 2...
Description	Fast S-IGBT in NPT-technology( NPT技术中的快S-IGBT) 快速的S -不扩散核武器条约IGBT的技术（不扩散技术中的快速第S - IGBT的）
File Size	415.74K / 12 Page	View it Online	Download Datasheet

				Fairchild Semiconductor List of Unclassifed Manufacturers
Part No.	FGA15N120ANTD FGA15N120ANTD07 FGA15N120ANTDF109 FGA15N120ANTDTU FGA15N120ANTDTUF109
OCR Text	...50 143 96 ---pF pF pF VGE = 15V 4.5 ---6.5 1.9 2.2 2.3 8.5 2.4 --V V V V Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time ...
Description	1200V NPT Trench IGBT NPT Trench Technology, Positive temperature coefficient Extremely enhanced avalanche capability
File Size	832.67K / 10 Page	View it Online	Download Datasheet

				STMICROELECTRONICS
Part No.	BULD1101E-1
OCR Text	... v ce =5v t j =125c 20 23 6 4 38 44 10 7 80 85 18 16 t s t f resistive load storage time fall time v cc =125v i c =2.5a i b1 ...6mj obsolete product(s) - obsolete product(s) electrical characteristics buld1101e 4/11 2.1 ty...
Description	3 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-251
File Size	264.97K / 11 Page	View it Online	Download Datasheet

				IXYS CORP
Part No.	IXGH28N60B
OCR Text	...r 10 s weight to-247 6 g to-268 4 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. ...6mj r thjc 0.83 k/w r thck to-247 0.25 k/w inductive load, t j = 25 c i c = i c90 , v ge = ...
Description	Ultra Low VCE(sat) IGBT with Diode(VCES涓?00V锛?CE(sat)涓?.0V???缂??????朵?绠?甯?????锛?
File Size	55.06K / 2 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	BSS314PE
OCR Text	4.5v rated) ? esd protected ? qualified according aec q101 ? 100% lead-free; rohs compliant maximum ratings, at t j =25 c, unless otherwis...6mj reverse diode d v /d t d v /d t i d =-1.5 a, v ds =-16 v, d i /d t =-200a/s, t j,max =150 c 6...
Description	OptiMOS?P 3 Small-Signal-Transistor
File Size	239.38K / 9 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	VVZB135-16NO1
OCR Text	...ry diode for braking system 6+7 4+5 2+3 19 + 20 1213 10 + 11 1 21+22 18 8+9 ntc 16 15 14 17 see outline drawing for pin arrangement e72873 r...6mj e off 5mj r thjc 0.33 k/w r thch 0.1 k/w symbol conditions characteristic values (t vj = 25c, u...
Description	Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System
File Size	166.54K / 5 Page	View it Online	Download Datasheet

For 4.6mj Found Datasheets File :: 141 Search Time::2.109ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |