|
|
 |

International Rectifier
|
Part No. |
IRF3703 IRF3703PBF
|
OCR Text |
...6A m 3.9 VGS = 7.0V, ID = 76A 4.0 V VDS = VGS, ID = 250A 20 VDS = 24V, VGS = 0V A 250 VDS = 24V, VGS = 0V, TJ = 150C 200 VGS = 20V nA -200 VGS = -20V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf ... |
Description |
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A? Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A) Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?) Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)
|
File Size |
93.04K /
8 Page |
View
it Online |
Download Datasheet
|
|
|
 |

IRF[International Rectifier] International Rectifier, Corp.
|
Part No. |
IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR
|
OCR Text |
...en mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994
...20V di/dt = 100A/s TJ = 125C, IF = 35.5A, VR=20V di/dt = 100A/s
2
www.irf.com
IRF3704/370... |
Description |
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 20V Single N-Channel HEXFET Power MOSFET in a TO-262 package 20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A? Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A) Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A) Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?) Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A) CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET(减振钢板基本\u003d 20V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 77A条? TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 77A I(D) | TO-263AB
|
File Size |
123.62K /
10 Page |
View
it Online |
Download Datasheet
|
|
|
 |

International Rectifier, Corp. IRF[International Rectifier]
|
Part No. |
IRF3710 IRF3710PBF
|
OCR Text |
... = 1mA 23 m VGS = 10V, ID =28A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 28A 25 VDS = 100V, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 130 ID = 28A 26 nC VDS = 80V 43 VGS = 10V, See Fig. 6 and 13 ... |
Description |
Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 23mohm,身份证\u003d 57A条) Power MOSFET(Vdss=100V Rds(on)=23mohm Id=57A) 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
File Size |
92.57K /
8 Page |
View
it Online |
Download Datasheet
|
|
|
 |
Alpha & Omega Semicondu...
|
Part No. |
AOD454 AOD454-08
|
OCR Text |
4 30 50 60 r q jc 2.3 3 w t a =70c 1.3 powerdissipation a t a =25c p dsm 2 repetitiveavalancheenergyl=0.1mh c 20 a mj junctionandstoragetemp...20v,r l =1.7 w , r gen =3 w gateresistance v gs =0v,v ds =0v,f=1mhz turnofffalltime totalgatecharge ... |
Description |
N-Channel Enhancement Mode Field Effect Transistor
|
File Size |
197.83K /
6 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|