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  4-20v Datasheet PDF File

For 4-20v Found Datasheets File :: 48562    Search Time::3.062ms    
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    IRF360 IRF360-15

IRF[International Rectifier]
Part No. IRF360 IRF360-15
OCR Text ...o the last page 25 16 100 300 2.4 20 980 25 30 4.0 -55 to 150 300 (0.063 in. (1.6mm) from case for 10s) 11.5(typical) Units A W W/C ...20V VGS = -20V VGS = 10V, ID =25A VDS = 200V VDD =200V, ID =25A, RG =2.35 Drain-to-Source Breakdo...
Description Repetitive Avalanche Ratings
TRANSISTORS N-CHANNEL(Vdss=400V/ Rds(on)=0.20ohm/ Id=25A)
TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.20ohm, Id=25A)
400V Single N-Channel Hi-Rel MOSFET in a TO-204AE package

File Size 138.60K  /  7 Page

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    IRF3703 IRF3703PBF

International Rectifier
Part No. IRF3703 IRF3703PBF
OCR Text ...6A m 3.9 VGS = 7.0V, ID = 76A 4.0 V VDS = VGS, ID = 250A 20 VDS = 24V, VGS = 0V A 250 VDS = 24V, VGS = 0V, TJ = 150C 200 VGS = 20V nA -200 VGS = -20V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf ...
Description 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A)
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?)
Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)

File Size 93.04K  /  8 Page

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    IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR
OCR Text ...en mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 ...20V di/dt = 100A/s TJ = 125C, IF = 35.5A, VR=20V di/dt = 100A/s 2 www.irf.com IRF3704/370...
Description 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A)
Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?)
Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A)
CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET(减振钢板基本\u003d 20V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 77A条?
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 77A I(D) | TO-263AB

File Size 123.62K  /  10 Page

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    IRF3706 IRF3706L IRF3706S

IRF[International Rectifier]
Part No. IRF3706 IRF3706L IRF3706S
OCR Text ...e Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current TO-220AB IRF3706 D2Pak IRF3706S TO-262 I...20V di/dt = 100A/s TJ = 125C, IF = 36A, VR=20V di/dt = 100A/s 2 www.irf.com IRF3706/3706S...
Description Power MOSFET(Vdss=20V/ Rds(on)max=8.5mohm/ Id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=8.5mohm, Id=77A)
Power MOSFET(Vdss=20V Rds(on)max=8.5mohm Id=77A)

File Size 143.52K  /  11 Page

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    PDA012B-350C PDA012B-350C-H

Phihong USA Inc.
Part No. PDA012B-350C PDA012B-350C-H
OCR Text ...: operating temperature - 4 0 to 6 0c (10w) - 40 to 50c (12w) storage temperature - 4 0 to 7 7 c operating humidity 10 to 95% storage humidity 5 to 95% case temperature +80 c warra...
Description High Reliability 12W LED Driver for Indoor and Architectural Lighting

File Size 117.80K  /  3 Page

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    RK10J12E0024 RK10J12E002L RK14J12A0A0U

ALPS ELECTRIC CO.,LTD.
Part No. RK10J12E0024 RK10J12E002L RK14J12A0A0U
OCR Text ...v dc not applicable 3,000 3,000 4 3b 1b 15 a 3b 15 c rk14j11r000j rk14j11r000h rk14j12r0a01 rk14j12r0a0c 1. other varieties are also availab...20v dc single-unit only total rotational angle 27010 2705 rotational torque 0.5 to 10mn?m 1 to 10mn?...
Description Low-profile, dip and reflow solderable

File Size 572.00K  /  7 Page

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    UT8067 UT8067G-S08-R

Unisonic Technologies
Part No. UT8067 UT8067G-S08-R
OCR Text ... * r ds(on) < 33 m ? @ v gs =4.5v, i d =4.5a * high switching speed ? ordering information pin assignment ordering number packag...20v 15 v drain-source leakage current i dss v ds =30v, v gs =0v 10 a forward v gs =+20v, v ds...
Description N-CHANNEL MOSFET

File Size 197.30K  /  5 Page

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    IRF3710L IRF3710S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710L IRF3710S
OCR Text ...commodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mou...20V nA -100 VGS = -20V 190 ID = 28A 26 nC VDS = 80V 82 VGS = 10V, See Fig. 6 and 13 --- VDD = 50V -...
Description Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.025ohm,身份证\u003d 57A条)
Power MOSFET(Vdss=100V/ Rds(on)=0.025ohm/ Id=57A)
Power MOSFET(Vdss=100V Rds(on)=0.025ohm Id=57A)

File Size 180.61K  /  10 Page

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    IRF3710 IRF3710PBF

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710 IRF3710PBF
OCR Text ... = 1mA 23 m VGS = 10V, ID =28A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 28A 25 VDS = 100V, VGS = 0V A 250 VDS = 80V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 130 ID = 28A 26 nC VDS = 80V 43 VGS = 10V, See Fig. 6 and 13 ...
Description Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 23mohm,身份证\u003d 57A条)
Power MOSFET(Vdss=100V Rds(on)=23mohm Id=57A)
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 92.57K  /  8 Page

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    Alpha & Omega Semicondu...
Part No. AOD454 AOD454-08
OCR Text 4 30 50 60 r q jc 2.3 3 w t a =70c 1.3 powerdissipation a t a =25c p dsm 2 repetitiveavalancheenergyl=0.1mh c 20 a mj junctionandstoragetemp...20v,r l =1.7 w , r gen =3 w gateresistance v gs =0v,v ds =0v,f=1mhz turnofffalltime totalgatecharge ...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 197.83K  /  6 Page

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For 4-20v Found Datasheets File :: 48562    Search Time::3.062ms    
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