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Solid States Devices, Inc. Solid State Devices, Inc.
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Part No. |
SFT6800S.5
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OCR Text |
... t urn - off t ime v cc = 330v, i c = 500 ma, i b1 =i b2 = 100 ma ( r b1 = r b2 = 100 o , pw = 2 m s) t off ?? 1700 2000 ns note: all specifications are subject to change without notification. scd's... |
Description |
2 A /500 Volts NPN switching Transistor 2000 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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File Size |
31.02K /
2 Page |
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Mitsubishi Electric Corporation POWEREX[Powerex Power Semiconductors]
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Part No. |
CT20TM-8
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OCR Text |
...xe
RECOMMEND CONDITION VCM = 330v IP = 120A CM = 700F VGE = 28V
MAXIMUM CONDITION 360V 130A 800F
Notice 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And reverse ga... |
Description |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
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File Size |
27.51K /
2 Page |
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it Online |
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Changsha Sunman
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Part No. |
LCD-1602A
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OCR Text |
...5??n??? ybz ?j 0?l 0v3? 330v3? ?v3n? ?v ?n? lv3n??? lv3n?? ?- ?v3af?g?
?/cyd ? n?? ?v3af?g?
?/cyd ? n?? -v3ag?
|? ?v
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Description |
LCD Module
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File Size |
305.76K /
5 Page |
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it Online |
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Supertex Inc Supertex Inc
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Part No. |
TN5335 TN5335NW TN5335N8 TN5335K1
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OCR Text |
...5 c 5.0 na v gs = 0v, v ds = 330v i d(on) on-state drain current 300 v gs = 4.5v, v ds = 25v 750 ma v gs = 10v, v ds = 25v r ds(on) static drain-to source 15 v gs = 3.0v, i d = 20ma on-state resistance 15 ? v gs = 4.5v, i d = 150... |
Description |
N-Channel Enhancement-Mode Vertical DMOS FETs
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File Size |
441.73K /
2 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
CT20TM-8
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OCR Text |
...xe
RECOMMEND CONDITION VCM = 330v IP = 120A CM = 700F VGE = 28V
MAXIMUM CONDITION 360V 130A 800F
Notice 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And reverse ga... |
Description |
STROBE FLASHER USE
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File Size |
24.75K /
2 Page |
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it Online |
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Advanced Power Electronics
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Part No. |
AP2761P-A
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OCR Text |
...urce voltage (v) i d =10a v ds =330v v ds =410v v ds =520v
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Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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File Size |
89.16K /
4 Page |
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it Online |
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