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3.5 24 90 Datasheet PDF File

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				International Rectifier
Part No.	IRF1404
OCR Text	...crew Max. 162 115 650 200 1.3 20 519 95 20 5.0 -55 to + 175 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Gr...
Description	Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?) Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A) Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=162A)
File Size	105.33K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF1704
OCR Text	...srew Max. 170 120 680 230 1.3 20 670 100 23 1.9 -55 to + 200 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/C V mJ A mJ ...5 7.5 6950 1660 200 6250 1470 2320 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Refere...
Description	Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?? Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A) POWER MOSFET(VDSS=40V, RDS(ON)=0.004OHM, ID=170Aㄌ) Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?) Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A)
File Size	100.05K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF2807
OCR Text	...Units C/W www.irf.com 1 3/16/01 IRF2807 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/T...5 --- VGS = 10V, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and cent...
Description	Power MOSFET(Vdss=75V, Id=82A?) Power MOSFET(Vdss=75V, Id=82A)
File Size	149.88K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3205 IRF3205PBF
OCR Text	...srew Max. 110 80 390 200 1.3 20 62 20 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/C V A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Juncti...
Description	55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A? Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A) Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?) Power MOSFET(Vdss=55V/ Rds(on)=8.0mohm/ Id=110A)
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				International Rectifier
Part No.	IRF3315
OCR Text	...S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 12A, VGS = 0V --- 174 260 ns TJ = 25C, IF = 12A --- 1.2 1.7 C di/dt = 100A/s Intrinsic ...5.5V 5.0V BOTTOM 4.5V TOP IRF3315 1000 I D , Drain-to-Source Current (A) INPUT NEW DATA ...
Description	Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A)
File Size	121.12K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3415
OCR Text	...3 srew Max. 43 30 150 200 1.3 20 590 22 20 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbfin (1.1Nm) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface...
Description	Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A) Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A) Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)
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				IRF[International Rectifier]
Part No.	IRF360 IRF360-15
OCR Text	...gh energy pulse circuits. TO-3 Features: n n n n n Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Dr...5(typical) Units A W W/C V mJ A mJ V/ns o C g www.irf.com 1 01/24/01 IRF360 ...
Description	Repetitive Avalanche Ratings TRANSISTORS N-CHANNEL(Vdss=400V/ Rds(on)=0.20ohm/ Id=25A) TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.20ohm, Id=25A) 400V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
File Size	138.60K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3703 IRF3703PBF
OCR Text	...nge Max. 210 100 1000 230 3.8 1.5 20 5.0 -55 to + 175 Units A W W/C V V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. --- 0.5 --- Max. 0.6...
Description	30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A? Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A) Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?) Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)
File Size	93.04K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR
OCR Text	...se Leakage --- Typ. --- 0.021 6.3 9.8 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 9.0 VGS = 10V, ID = 15A m 13.5 VGS = 4.5V, ID = 12A 3.0 V VDS = VGS, ID = 250A 20 VDS = 16V, VGS ...
Description	20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 20V Single N-Channel HEXFET Power MOSFET in a TO-262 package 20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A? Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A) Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A) Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?) Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A) CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET（减振钢板基本\u003d 20V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 77A条? TRANSISTOR \| MOSFET \| N-CHANNEL \| 20V V(BR)DSS \| 77A I(D) \| TO-263AB
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				IRF[International Rectifier]
Part No.	IRF3706 IRF3706L IRF3706S
OCR Text	... 6.0 8.5 VGS = 10V, ID = 36A 7.3 10.5 m VGS = 4.5V, ID = 28A 11 22 VGS = 2.8V, ID = 18A --- 2.0 V VDS = VGS, ID = 250A --- 20 VDS = 16V, VGS = 0V A --- 100 VDS = 16V, VGS = 0V, TJ = 125C --- 200 VGS = 12V nA --- -200 VGS = -12V Dynami...
Description	Power MOSFET(Vdss=20V/ Rds(on)max=8.5mohm/ Id=77A) Power MOSFET(Vdss=20V, Rds(on)max=8.5mohm, Id=77A) Power MOSFET(Vdss=20V Rds(on)max=8.5mohm Id=77A)
File Size	143.52K / 11 Page	View it Online	Download Datasheet

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