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INFINEON[Infineon Technologies AG]
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| Part No. |
SKB10N60A SKP10N60A SKW10N60A
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| OCR Text |
...ENT
Ic
t p = 5 s
40A 30A 20a 10A T C =110c
Ic
10A
1 5 s 5 0 s
1A
2 0 0 s 1m s DC
0 ,1 A
0A 10H z
100H z
1kH ...600v, start at Tj = 25C)
VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector cur... |
| Description |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Fast IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode
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| File Size |
442.88K /
15 Page |
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IRF[International Rectifier]
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| Part No. |
IRGBC20SD2
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| OCR Text |
...40A
30
2.0
20
I C = 20a
1.5
10
I C = 10A
0 25 50 75 100 125
A
150
1.0 -60 -40 -20 0 20 40 60 80
A
100 120 140 160
T C , Case Temperature (C)
T J , Junction Temperature (C)
Fig. 4 - Maximum Collect... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600v, @Vge=15V, Ic=10A)
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| File Size |
435.68K /
10 Page |
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it Online |
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SIEMENS AG
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| Part No. |
SKW30N60
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| OCR Text |
...10hz 100hz 1khz 10khz 100khz 0a 20a 40a 60a 80a 100a 120a 140a 160a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 0.1a 1a 10...600v, start at t j = 25 c) figure 20. typical short circuit collector current as a function of ga... |
| Description |
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技术中的快S-IGBT) 快速的S - IGBT的不扩散核武器条约与软，恢复快反平行快恢复二极管（不扩散技术中的快速第S - IGBT技术）
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| File Size |
272.38K /
13 Page |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AOK20S60
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| OCR Text |
20a a aa a mos tm power transistor v ds @ t j,max 700v i dm 80a r ds(on),max 0.199 w q g,typ 20nc e oss @ 400v 4.9 m j...600v, v gs =0v v ds =5v,i d =250 m a a. the value of r q ja is measured with the device in a stil... |
| Description |
600v 20a a MOS Power Transistor
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| File Size |
349.18K /
6 Page |
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it Online |
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STMicro
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| Part No. |
STTA2006PI STTA2006P 3170
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| OCR Text |
... IF(AV) VRRM trr (typ) VF (max) 20a 600v 30ns 1.5V
K
FEATURES AND BENEFITS SPECIFIC TO "FREEWHEEL MODE" OPERATIONS: FREEWHEEL OR BOOSTER DIODE. ULTRA-FAST AND SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPAN... |
| Description |
TURBOSWITCH TM ULTRA-FAST HIGH VOLTAGE DIODE
From old datasheet system
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| File Size |
70.46K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRGB4064DPBF
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| OCR Text |
...0
ICE = 5.0A ICE = 10A ICE = 20a
12 10 8 6 4 2 0 5 10
ICE = 10A ICE = 20a
15 VGE (V)
20
5
10 VGE (V)
15
20
Fig. 9 - Typical VCE vs. VGE TJ = -40C
20 18 16 14
VCE (V)
Fig. 10 - Typical VCE vs. VGE TJ = 25C
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| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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| File Size |
367.91K /
10 Page |
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it Online |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AOK20N60
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| OCR Text |
20a n-channel mosfet v ds i d (at v gs =10v) 20a r ds(on) (at v gs =10v) < 0.37 w symbol the aok20n60 is fabricated using an ...600v, v gs =0v m a bv dss static drain-source on-resistance v gs =10v, i d =10a reverse transfer cap... |
| Description |
600v,20a N-Channel MOSFET
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| File Size |
486.56K /
5 Page |
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