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Maxim
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| Part No. |
MAX2645
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| OCR Text |
...Modes) Gain: +14.4dB/-9.7dB NF: 2.3dB/15.5dB Input IP3: +4dBm/+13dBm Supply Current: 9.2mA/2.7mA o Highly Versatile Application Receive Path...4/-9.7 14.9/-10.7 15.2/-9.7
NF (dB) 2.3/15.5 2.6/16 2.6/16
IIP3 (dBm) +4/+13 +10/+15.5 +11.8/+... |
| Description |
3.4GHz to 3.8GHz SiGe Low-Noise Amplifier/ PA Predriver From old datasheet system
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| File Size |
263.98K /
12 Page |
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SANYO
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| Part No. |
SBFP540D
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| OCR Text |
...eration. ? high gain : ? s21e ? 2 =17.5db typ (v ce =1v, f=1.8ghz). ? high gain : ? s21e ? 2 =18.5db typ (v ce =2v, f=1.8ghz). specificatio...4.5 v emitter-to-base voltage v ebo 1v collector current i c 80 ma collector dissipation p c 100 mw ... |
| Description |
Ultrahigh-Frequency Transistors
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| File Size |
52.17K /
14 Page |
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it Online |
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SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
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| Part No. |
CLY15 Q62702-L99
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| OCR Text |
...For frequencies from 400 MHz to 2.5 GHz * Operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8 GHz typ. 31.5 dBm * Efficiency better 5...4.7
Unit V V V A C C W
Thermal resistance Channel-soldering point (GND)
RthChS
< 15
K... |
| Description |
GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz) 砷化镓场效应管(功率放大器,对于00兆赫2.5千兆赫频率的移动电话 From old datasheet system
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| File Size |
59.12K /
7 Page |
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SIEMENS AG
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| Part No. |
BFR183W
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| OCR Text |
...s at collector currents from 2 ma to 30 ma f t = 8 ghz f = 1.2 db at 900 mhz 1 3 vso05561 2 esd : e lectro s tatic d ischarge...4 spice parameters (gummel-poon model, berkley-spice 2g.6 syntax) : transistor chip data is = 1.0345... |
| Description |
NPN Silicon RF Transistor(NPN 射频硅晶体管) NPN硅射频晶体管(npn型射频硅晶体管)
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| File Size |
117.71K /
7 Page |
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it Online |
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