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  16.0v Datasheet PDF File

For 16.0v Found Datasheets File :: 2198    Search Time::0.828ms    
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    IRFR220NTRPBF IRFU220NPBF IRFR220NPBF IRFR220NTRLPBF IRFR220NTRRPBF

International Rectifier
Part No. IRFR220NTRPBF IRFU220NPBF IRFR220NPBF IRFR220NTRLPBF IRFR220NTRRPBF
OCR Text ...e charge ??? 2.4 3.6 nc v ds = 160v q gd gate-to-drain ("miller") charge ??? 6.1 9.2 v gs = 10v, t d(on) turn-on delay time ??? 6.4 ??? v dd = 100v t r rise time ??? 11 ??? i d = 2.9a t d(off) turn-off delay time ??? 20 ??? r g = 24 ? ...
Description 5 A, 200 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
High frequency DC-DC converters
HEXFETPower MOSFET

File Size 224.67K  /  11 Page

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    STMicroelectronics N.V.
Part No. STTH1R02
OCR Text ...0 1000 q rr (nc) i f =1.5a v r =160v t j =125c t j =25c di f /dt(a/s) 0 10 20 30 40 50 60 70 80 10 100 1000 t rr (ns) i f =1.5a v r =160v t j =125c t j =25c di f /dt(a/s) figure 9. peak reverse recovery curent versus di f /dt (typical valu...
Description Ultrafast recovery diode 超快恢复二极

File Size 83.30K  /  8 Page

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    BUZ901X4S BUZ900X4S

Magnatec
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. BUZ901X4S BUZ900X4S
OCR Text ...ED AND DIFFUSED * HIGH VOLTAGE (160V & 200V) * HIGH ENERGY RATING SOT227 Pin 1 - Drain Pin 2 - Source Pin 3 - Gate Pin 4 - Drain * ENHANCEMENT MODE * INTEGRAL PROTECTION DIODE * P-CHANNEL ALSO AVAILABLE ABSOLUTE MAXIMUM RATINGS (T...
Description N-Channel Power MOSFET For Audio Application(N沟道功率型MOS场效应管(用于音频电路)) N沟道功率MOSFET为音频应用(不适用马鞍山沟道功率型场效应管(用于音频电路)
NEW PRODUCT UNDER DEVELOPMENT 新产品开发中

File Size 33.10K  /  2 Page

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    ZETEX[Zetex Semiconductors]
Part No. ZXTN19100CFFTA ZXTN19100CFF
OCR Text ... VBC > -0.25V IE = 100 A, VCB = 160V VCB = 160V, Tamb= 100C VCE = 160V, RBE < 1k -1V < VBE < 0.25V VEB = 5.6V IC = 1A, IB = 100mA(*) IC = 1A, IB = 20mA(*) IC = 4.5A, IB = 450mA(*) IC = 4.5A, IB = 450mA(*) IC = 4.5A, VCE = 2V (*) IC = 0.1A, ...
Description 100V, SOT23F, NPN high gain power transistor

File Size 397.43K  /  8 Page

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    HV21716PJ HV21816PJ HV21716X HV21716 HV21816 HV21816X

Supertex, Inc
Part No. HV21716PJ HV21816PJ HV21716X HV21716 HV21816 HV21816X
OCR Text ...0V to 80V 80V to 150V VPP - VNN 160V 160V 28-lead plastic chip carrier HV21716PJ HV21816PJ Die HV21716X HV21816X LETE - OBSO - HV21716 HV21816 Features HVCMOS(R) technology for high performance Low charge injection Very low qui...
Description Low Charge Injection 8-Channel High Voltage Analog Switch

File Size 91.19K  /  10 Page

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    HV230 HV230B1-G HV230GA HV230GA-G HV23007 HV232 HV232FG HV232FG-G HV232PJ HV232PJ-G

Supertex, Inc
Part No. HV230 HV230B1-G HV230GA HV230GA-G HV23007 HV232 HV232FG HV232FG-G HV232PJ HV232PJ-G
OCR Text ...13.2V 40V to VNN +200V -40V to -160V VDD -1.5V to VDD 0V to 1.5V VNN +10V to VPP -10V2 0OC to 70OC negative high voltage supply Notes: 1. Power up/down sequence is arbtrary except GND must be powered -up first and powered down last. 2...
Description Low Charge Injection 8-Channel High Voltage Analog Switches with Bleed Resistors

File Size 618.09K  /  9 Page

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    IRFR9N20D IRFU9N20D

IRF[International Rectifier]
Part No. IRFR9N20D IRFU9N20D
OCR Text ...V, VGS = 0V A --- --- 250 VDS = 160V, VGS = 0V, T J = 150C --- --- 100 VGS = 30V nA --- --- -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter...
Description Power MOSFET(Vdss=200V, Rds(on)max=0.38ohm, Id=9.4A)
N-Channel SMPS MOSFET,for High Frequency DC-DC Converters(应用于高DC-DC转换器的N沟道开关模式电源MOS场效应管)

File Size 122.91K  /  10 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. FQPF3P20
OCR Text ... 10 25 80 35 60 8.0 - - nC VDS=-160V, VGS=-10V ID=-2.8A See Fig 6 & Fig 12 { | ns VDD=-100V, ID=-2.8A RG=50 See Fig 13 {| pF A S Units V V/C V nA Test Conditions VGS=0V, ID=-250A ID=-250A, See Fig 7 VDS=-5V, ID=-250A VGS=-30V VGS= 30...
Description QFET P-CHANNEL

File Size 528.64K  /  8 Page

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    IRFS31N20DPBF IRFSL31N20DPBF IRFB31N20DPBF IRFB31N20DPBF-15 IRFS31N20DTRLP

International Rectifier
Part No. IRFS31N20DPBF IRFSL31N20DPBF IRFB31N20DPBF IRFB31N20DPBF-15 IRFS31N20DTRLP
OCR Text ...DS = 200V, VGS = 0V A 250 VDS = 160V, VGS = 0V, TJ = 150C 100 VGS = 30V nA -100 VGS = -30V Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Max. Units Condit...
Description High Frequency DC-DC converters
HEXFET Power MOSFET ( VDSS = 200V , RDS(on)max = 0.082ヘ , ID = 31A )
HEXFET Power MOSFET ( VDSS = 200V , RDS(on)max = 0.082Ω , ID = 31A )

File Size 285.31K  /  12 Page

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    SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STV7801SP STV7801 STV7801S
OCR Text ...F 3 12 Out 2 CBoot 14 +90V 100F/160V 1 15 Vpp STV7801 1H Vssp 11 to Vpp pins of data driver ICs (eg pins 1, 2, 42, 66, 107,108 of STV7610A) 10K LH-Tr 100pF 4 5 47F/160V 1F/160V 10 Vdd DM-HL DM-LH 6 9 Vsslog 7 8 P...
Description PLASMA DATA POWER SWITCH

File Size 194.71K  /  18 Page

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