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  15.000001 Datasheet PDF File

For 15.000001 Found Datasheets File :: 998    Search Time::1.313ms    
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    ONSEMI[ON Semiconductor]
Part No. NGP8203N
OCR Text ... ESD PD TJ, Tstg Value 440 440 "15 20 50 1.0 20 2.0 8.0 500 150 1.0 -55 to +175 Unit V V V ADC AAC mA mA kV kV V Watts W/C C TO-220 CASE 221...000001 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.00001 0.0001 0.001 0.01 t,TIME (S) 0.1 1 D CURVES APPLY F...
Description Ignition IGBT 20 A, 400 V, N-Channel TO-220
Ignition IGBT 20 A, 400 V, N−Channel TO−220

File Size 136.64K  /  7 Page

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    NGTB40N60IHLWG

ON Semiconductor
Part No. NGTB40N60IHLWG
OCR Text ...tter saturation voltage v ge = 15 v, i c = 40 a v ge = 15 v, i c = 40 a, t j = 150 c v cesat ? ? 2.0 2.6 2.4 ? v gate ? emitter thre...000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001...
Description Insulated Gate Bipolar Transistor (IGBT)

File Size 177.99K  /  10 Page

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    ONSEMI[ON Semiconductor]
Part No. MBRF30H60CTG MBR30H60CTG MBRB30H60CT-1G
OCR Text ...unction Temperature 30 A Total (15 A Per Diode Leg) Guard-Ring for Stress Protection These are Pb-Free Devices* SCHOTTKY BARRIER RECTIFIE...000001 0.00001 0.0001 0.001 0.01 t1, TIME (sec) 0.1 1 10 DUTY CYCLE, D = t1/t2 100 1000 Figure...
Description SWITCHMODE Power Rectifier 60 V, 30 A

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    INTERSIL[Intersil Corporation]
Part No. HI1826JCQ HI1826
OCR Text ...21 20 19 18 17 9 10 11 12 13 14 15 16 AGND CLKN CLKP DVEE AVEE D2 D1 VRTS VRT AGND NC VIN AGND VRB VRBS D3 D4 ...000001 111111 111110 * * * -1.0V 31 32 011111 100000 * * * 100000 011111 * * * 62 -2....
Description 6 Bit, 140 Msps, Flash A/D Converter
6-Bit, 140 MSPS, Flash A/D Converter

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    AOB414

Alpha & Omega Semiconductors
Part No. AOB414
OCR Text ...fer characteristics (note e) 10 15 20 25 30 35 40 0 5 10 15 20 25 30 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current ...000001 0.00001 0.0001 0.001 i ar (a) peak avalanche current time in avalanche, t a (s) figure 12: ...
Description N-Channel SDMOS TM Power Transistor

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    MBR10H100CT MBR10H100CTG

ONSEMI[ON Semiconductor]
Part No. MBR10H100CT MBR10H100CTG
OCR Text ...2 10 8 SQUARE 6 DC 4 2 0 0 5 10 15 IO, AVERAGE FORWARD CURRENT (AMPS) SQUARE WAVE 5 0 100 110 120 130 140 150 160 ...000001 0.00001 0.0001 Figure 8. Thermal Response Junction-to-Ambient R(t), TRANSIENT THE...
Description SWITCHMODE Power Rectifier 100 V, 10 A

File Size 64.71K  /  6 Page

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    Vishay
Part No. BAV21W-G
OCR Text ...00 v, t j = 100 c bav19w-g i r 15 a v r = 150 v bav20w-g i r 100 na v r = 150 v, t j = 100 c bav20w-g i r 15 a v r = 200 v bav21w-g i r...000001 0.00001 0.0001 0.001 0.01 ...
Description (BAV19W-G - BAV21W-G) Small Signal Switching Diodes

File Size 113.21K  /  5 Page

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    NCV4264 NCV4264ST50T3G

ON Semiconductor
ONSEMI
Part No. NCV4264 NCV4264ST50T3G
OCR Text ... 83 1.5 67 - +30 +40 500 400 15 - 9.0 mV mV mV mA mA dB mF W IOUT(LIM) IOUT(SC) TTSD VOUT = 4.5 V (Note 4) VOUT = 0 V (Note 4) (...000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 PULSE TIME (sec) ...
Description 150 mA Low Dropout Linear Regulator(150mA浣??宸?嚎?хǔ???)

File Size 112.73K  /  8 Page

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    NTLGD3502N NTLGD3502NT1G NTLGD3502NT2G

ON Semiconductor
Part No. NTLGD3502N NTLGD3502NT1G NTLGD3502NT2G
OCR Text ...G = 10 W 7.0 17.5 8.6 3.3 12 25 15 5.0 ns 3. Pulse Test: pulse width 300 ms, duty cycle 2% 4. Switching characteristics are independent...000001 Single Pulse 0.00001 0.0001 0.001 0.1 0.01 t, TIME (s) 1 10 100 1000 Figure 11. FET The...
Description Power MOSFET 20 V, 5.8 A/4.6 A Dual N−Channel, DFN6 3x3 mm Package

File Size 84.12K  /  8 Page

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    NTLJD2105L NTLJD2105LTBG

ON Semiconductor
Part No. NTLJD2105L NTLJD2105LTBG
OCR Text ... 25C unless otherwise noted) 0.15 VIN = 4.5 V VDROP, VOLTAGE DROP (V) VDROP, VOLTAGE DROP (V) 0.15 0.20 VIN = 2.5 V 0.10 TJ = 25C ...000001 0.00001 0.0001 0.001 P(pk) D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(p...
Description POWER MOSFET 8 V, 4.3 A, uCool High Side Load Switch with Level Shift, 2x2 mm WDFN Package

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