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  12a 200v Datasheet PDF File

For 12a 200v Found Datasheets File :: 781    Search Time::2.063ms    
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    FS12KMA-4A

Powerex, Inc.
Powerex Power Semiconductors
Part No. FS12KMA-4A
OCR Text .................................. 12a GATE DRAIN SOURCE TO-220FN APPLICATION CS Switch for CRT Display monitor, Switch mod...200v, VGS = 0V ID = 1mA, VDS = 10V ID = 6A, VGS = 10V ID = 6A, VGS = 10V ID = 6A, VDS = 10V VDS = 25...
Description Nch POWER MOSFET HIGH-SPEED SWITCHING USE 12 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 41.39K  /  4 Page

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    FMV24N25G

Fuji Electric
Part No. FMV24N25G
OCR Text ...tate resistance r ds (on) i d =12a, v gs =10v - 0.11 0.13 ? forward transconductance g fs i d =12a, v ds =25v 8 16 - s input capacitance ciss v ds =75v v gs =0v f=1mhz - 1150 1725 pf output capacitance coss - 200 300 reverse transfer capac...
Description N-CHANNEL SILICON POWER MOSFET

File Size 418.05K  /  5 Page

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    FSF254D FSF254D1 FSF254D3 FSF254R FSF254R1 FSF254R3 FSF254R4

Intersil Corporation
Part No. FSF254D FSF254D1 FSF254D3 FSF254R FSF254R1 FSF254R3 FSF254R4
OCR Text ...)12 VGS = 12V, ID = 18A ID = 12a, VGS = 12V Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate Charge a...200v VGS = 12V, ID = 18A VGS = 12V, ID = 12a MIN 1.5 MAX 250 4.0 100 25 3.21 .170 UNITS V V nA A V ...
Description 18A/ 250V/ 0.170 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
18A, 250V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

File Size 44.62K  /  8 Page

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    IRF[International Rectifier]
Part No. IRFB4103PBF
OCR Text ... 0V, ID = 250A V GS = 10V, ID = 12a V m V mV/C A nA S V/C Reference to 25C, ID = 1mA e V DS = V GS, ID = 250A V DS = 200v, V GS = 0V V DS = 200v, V GS = 0V, T J = 125C V GS = 30V V GS = -30V V DS = 50V, ID = 12a V DS = 160V n...
Description    DIGITAL AUDIO MOSFET

File Size 236.51K  /  7 Page

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    SIEMENS AG
Part No. SKA06N60
OCR Text ...4v 6v 8v 10v 0a 2a 4a 6a 8a 10a 12a 14a 16a 18a 20a -55 c +150 c t j =+25 c v ce(sat) , collector - emitter saturation voltage -50 c...200v, t j = 125 c) figure 22. typical reverse recovery charge as a function of diode current slop...
Description Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技术中的快S-IGBT)

File Size 235.00K  /  13 Page

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    IRG41BC30UD

International Rectifier
Part No. IRG41BC30UD
OCR Text .... = 1.95v @v ge = 15v, i c = 12a ultrafast copack igbt 7/17/2000 pd91753a parameter typ. max. units r jc junction-to-case - igbt ??? 2....200v q rr diode reverse recovery charge ??? 80 180 nc t j = 25 c see fig. ??? 220 600 t j = 1...
Description Ultra Fast CoPack IGBT

File Size 255.47K  /  10 Page

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    IRHY57230CMSE

International Rectifier
Part No. IRHY57230CMSE
OCR Text ...HY57230CMSE 100K Rads (Si) 0.23 12a IRHY57230CMSE 200v, N-CHANNEL 4# TECHNOLOGY c TO-257AA International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. These devices have been ch...
Description 200v 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-257AA package
RADIATION HARDENED POWER MOSFET

File Size 110.37K  /  8 Page

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    FS12UMA-4A

POWEREX[Powerex Power Semiconductors]
Part No. FS12UMA-4A
OCR Text .................................. 12a TO-220 APPLICATION CS Switch for CRT Display monitor, Switch mode power supply, etc. MAXIMU...200v, VGS = 0V ID = 1mA, VDS = 10V ID = 6A, VGS = 10V ID = 6A, VGS = 10V ID = 6A, VDS = 10V VDS = 25...
Description Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 43.90K  /  4 Page

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