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  1208 Datasheet PDF File

For 1208 Found Datasheets File :: 77965    Search Time::3.171ms    
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    2SJ504

HITACHI[Hitachi Semiconductor]
Part No. 2SJ504
OCR Text ...ine TO-220FM D G S 12 1. Gate 2. Drain 3. Source 3 2SJ504 Absolute Maximum Ratings (Ta = 25C) Item Drain to source vol...08 V GS = -4 V -20 A 0.04 -10 V 0 -40 0 40 80 120 Case Temperature Tc (C) 160 -5, -10 A 100 30 10...
Description    Silicon P Channel MOS FET High Speed Power Switching

File Size 50.21K  /  10 Page

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    2SJ530 2SJ530L 2SJ530S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ530 2SJ530L 2SJ530S
OCR Text ... Outline DPAK-2 4 D 4 12 G 3 12 S 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ530(L),2SJ530(S) Absolute Maximum Ratin...08 0.11 11 850 420 110 12 75 125 75 -1.1 70 Max -- -- -10 10 -2.0 0.10 0.16 -- -- -- -- -- -- -- -- ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 56.07K  /  9 Page

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    2SJ532

HITACHI[Hitachi Semiconductor]
Part No. 2SJ532
OCR Text ...tline TO-220CFM D G 12 S 3 1. Gate 2. Drain 3. Source 2SJ532 Absolute Maximum Ratings (Ta = 25C) Item Drain to source...08 V GS = -4 V -20 A 0.04 -10 V 0 -40 0 40 80 120 160 Case Temperature Tc (C) -5, -10 A Forward T...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 50.69K  /  9 Page

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    2SJ533

HITACHI[Hitachi Semiconductor]
Part No. 2SJ533
OCR Text ...tline TO-220CFM D G 12 S 3 1. Gate 2. Drain 3. Source 2SJ533 Absolute Maximum Ratings (Ta = 25C) Item Drain to source...08 I D = -50 A V GS = -4 V 0.04 -10 A -20 A -50 A -10,-20A Tc = -25 C 10 3 1 0.3 V DS = -10 V ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 51.60K  /  9 Page

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    2SJ535

HITACHI[Hitachi Semiconductor]
Part No. 2SJ535
OCR Text ...ine TO-220FM D G S 12 1. Gate 2. Drain 3. Source 3 2SJ535 Absolute Maximum Ratings (Ta = 25C) Item Drain to source vol...08 I D = -50 A V GS = -4 V 0.04 -10 A -20 A -50 A -10,-20A Tc = -25 C 10 3 1 0.3 V DS = -10 V ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 53.39K  /  9 Page

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    2SJ539

Toshiba Semiconductor
Hitachi Semiconductor
Part No. 2SJ539
OCR Text ... -3 -10 -30 -100 0 -4 -8 -12 Gate to Source Voltage -16 -20 V GS (V) Drain Current I D (A) Static Drain to Source on State...08 + 0.1 4.440.2 1.260.15 18.5 0.5 1.20.1 1.270.1 1.5 max 14.0 0.5 0.50.1 7.8 0.5 ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 52.99K  /  9 Page

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    2SJ540

HITACHI[Hitachi Semiconductor]
Part No. 2SJ540
OCR Text ...ulse) Note1 Ratings -60 20 -12 -48 -12 Unit V V A A A A mJ W C C Body-drain diode reverse drain current I DR Avalenche current Ava...08 + 0.1 4.440.2 1.260.15 18.5 0.5 1.20.1 1.270.1 1.5 max 14.0 0.5 0.50.1 7.8 0.5 ...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 52.52K  /  9 Page

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    2SJ541

HITACHI[Hitachi Semiconductor]
Part No. 2SJ541
OCR Text ...- -- 0.075 0.105 11 850 420 110 12 75 125 75 -1.1 70 Max -- -- -10 10 -2.0 0.095 0.155 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF p...08 0 -40 0 40 80 120 160 Case Temperature Tc (C) 0.1 -0.1 -0.3 -1 -3 -10 -30 Drain Current I D...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 52.02K  /  9 Page

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    2SJ542

HITACHI[Hitachi Semiconductor]
Part No. 2SJ542
OCR Text ...ulse Test -20 I D (A) -12 ID (A) -16 -3.5 V -16 -12 Tc = 75C Drain Current -8 -2.5 V -4 VGS = -2 V 0 -2 -4 ...08 C/W, Tc = 25 C PDM PW T 0.03 0.02 1 lse 0.0 t pu o h 1s D= PW T 0.01 10 100 ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 51.62K  /  9 Page

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    2SJ543

HITACHI[Hitachi Semiconductor]
Part No. 2SJ543
OCR Text ...st -20 -50 -100 0 -4 -8 -12 Gate to Source Voltage -16 -20 V GS (V) Drain Current I D (A) Static Drain to Source on State...08 V GS = -4 V -20 A 0.04 -10 V 0 -40 0 40 80 120 160 Case Temperature Tc (C) -5, -10 A Forward T...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 52.32K  /  9 Page

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