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MTD20 S2L20U LD1960A S2L20U 87C51F A6115A OP227G 29LV64
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  100nh Datasheet PDF File

For 100nh Found Datasheets File :: 637    Search Time::1.547ms    
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    DIM200WBS12-A000

Dynex Semiconductor, Ltd.
Part No. DIM200WBS12-A000
OCR Text ...600V RG(ON) = RG(OFF) = 4.7 L 100nh Min. Typ. 600 50 20 240 95 25 2 30 125 13 Max. Units ns ns mJ ns ns mJ C C A mJ Tcase = 125 unless stated otherwise. C Symbol td(off) tf EOFF td(on) tr EON Qrr Irr EREC Parameter Turn-off delay time...
Description Single Switch IGBT Module 200 A, 1200 V, N-CHANNEL IGBT

File Size 214.91K  /  10 Page

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    DIM200WHS12-E000

Dynex Semiconductor
Part No. DIM200WHS12-E000
OCR Text ...V RG(ON) = 10 RG(OFF) = 3.6 L ~ 100nh Min. Typ. 550 100 20 200 50 20 1.5 15 200 6 Max. Units ns ns mJ ns ns mJ C C A mJ Tcase = 125C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Irr EREC Parameter Turn-off delay time ...
Description Half Bridge IGBT Module

File Size 174.74K  /  8 Page

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    DIM200WHS17-A000

Dynex Semiconductor
Part No. DIM200WHS17-A000
OCR Text ...900V RG(ON) = RG(OFF) = 4.7 L ~ 100nh Min. Typ. 590 300 40 320 90 50 2 65 195 42 Max. Units ns ns mJ ns ns mJ C C A mJ Tcase = 125C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Irr EREC Parameter Turn-off delay time F...
Description Half Bridge IGBT Module

File Size 148.25K  /  8 Page

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    DIM200WKS17-A000

Dynex Semiconductor
Part No. DIM200WKS17-A000
OCR Text ...900V RG(ON) = RG(OFF) = 4.7 L ~ 100nh Min. Typ. 590 300 40 320 90 50 2 65 195 42 Max. Units ns ns mJ ns ns mJ C C A mJ Tcase = 125C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Irr EREC Parameter Turn-off delay time F...
Description IGBT Chopper Module - Upper Arm Control

File Size 150.19K  /  8 Page

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    DIM400DCM17-A000

Dynex Semiconductor Ltd.
Part No. DIM400DCM17-A000
OCR Text ...900V RG(ON) = RG(OFF) = 4.7 L ~ 100nh Min. Typ. 1150 100 120 250 250 150 4.5 250 100 530 230 160 70 Max. Units ns ns mJ ns ns mJ C C C A A mJ mJ Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handli...
Description IGBT Chopper Module

File Size 178.98K  /  11 Page

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    DIM200PHM33-F00011

Dynex Semiconductor
Part No. DIM200PHM33-F00011
OCR Text ...1800v c ge = 56nf l s ~ 100nh r g(on) = 16.5 ? r g(off) = 16.5 ? 1.95 s t f fall time 170 ns e off turn - off energy loss 220 mj t d(on) turn - on delay time 1180 ns t r rise ti...
Description Half Bridge IGBT Module

File Size 310.34K  /  8 Page

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    DIM100PHM33-F000 DIM100PHM33-F000-15

Dynex Semiconductor
Part No. DIM100PHM33-F000 DIM100PHM33-F000-15
OCR Text ...1800v c ge = 33nf l s ~ 100nh r g(on) = 33 ? r g(off) = 33 ? 1.95 s t f fall time 170 ns e off turn - off energy loss 110 mj t d(on) turn - on delay time 1180 ns t r rise time ...
Description Half Bridge IGBT Module

File Size 310.85K  /  8 Page

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    DIM200PKM33-F00011 DIM200PKM33-F000-15

Dynex Semiconductor
Part No. DIM200PKM33-F00011 DIM200PKM33-F000-15
OCR Text ...1800v c ge = 56nf l s ~ 100nh r g(on) = 16.5 ? r g(off) = 16.5 ? 1.95 s t f fall time 170 ns e off turn - off energy loss 220 mj t d(on) turn - on delay time 1180 ns t r rise ti...
Description IGBT Chopper Module

File Size 309.68K  /  8 Page

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    DIM800DCM12-A000

Dynex Semiconductor
Part No. DIM800DCM12-A000
OCR Text ... g(on) = r g(off) = 2.7 ? l ~ 100nh i f = 800a, v r = 600v, di f /dt = 4200a/ s parameter turn-off delay time fall time turn-off energy loss turn-on delay time rise time turn-on energy loss gate charge diode reverse recovery charge dio...
Description IGBT Chopper Module

File Size 197.96K  /  10 Page

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    DIM200PLM33-F00011

Dynex Semiconductor
Part No. DIM200PLM33-F00011
OCR Text ...1800v c ge = 56nf l s ~ 100nh r g(on) = 16.5 ? r g(off) = 16.5 ? 1.95 s t f fall time 170 ns e off turn - off energy loss 220 mj t d(on) turn - on delay time 1180 ns t r rise ti...
Description IGBT Chopper Module

File Size 309.86K  /  8 Page

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For 100nh Found Datasheets File :: 637    Search Time::1.547ms    
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