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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RD12MVS1
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| OCR Text |
...N. 1.8 11.5 55 LIMITS TYP. MAX. 10 1 4.4 12 57 Not destroy UNIT uA uA V W % -
Note: Above parameters, ratings, limits and conditions are ...943 0.945 0.948 0.946 0.950 0.946 0.952 0.959 0.950 S22 (ang) -160.3 -168.1 -170.7 -170.3 -171.7 -17... |
| Description |
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
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| File Size |
428.96K /
7 Page |
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PHILIPS[Philips Semiconductors]
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| Part No. |
PXTA93 PXTA92
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| OCR Text |
...200 V IC = 0; VBE = -3 V VCE = -10 V; note 1 IC = -1 mA IC = -10 mA IC = -30 mA VCEsat VBEsat Cc fT Note 1. Pulse test: tp 300 s; 0.02. c...943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon To... |
| Description |
PNP high-voltage transistor
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| File Size |
52.23K /
8 Page |
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it Online |
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PHILIPS[Philips Semiconductors]
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| Part No. |
PMSTA43 PMSTA42 PMSTA42_43_2
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| OCR Text |
...= 0; VEB = 4 V IC = 1 mA; VCE = 10 V IC = 10 mA; VCE = 10 V IC = 30 mA; VCE = 10 V; note 1 VCEsat Cre collector-emitter saturation voltage f...943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon To... |
| Description |
From old datasheet system
NPN high-voltage transistors
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| File Size |
42.11K /
8 Page |
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it Online |
Download Datasheet |
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PHILIPS[Philips Semiconductors]
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| Part No. |
PMBD353
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| OCR Text |
...ig.2 IF = 0.1 mA IF = 1 mA IF = 10 mA IR Cd Note 1. Pulse test: tp = 300 s; = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to...943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon To... |
| Description |
Schottky barrier double diode
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| File Size |
47.20K /
8 Page |
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it Online |
Download Datasheet |
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