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Macronix International Co., Ltd.
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| Part No. |
23C4100-10 23C4100-12 23C4100-15
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| OCR Text |
.... . mx23c4100 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 a17 a7 a6 a5 a4 a3 a2 a1 a0 ce vss oe q0 q8 q1 q9 q2 q10 q3 q11 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 a8 a9 a10 a11 a12 a13 a14 a15 a16 byte vss q15/a-1 ... |
| Description |
4M-BIT [512K x 8/256K x 16] MASK ROM
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| File Size |
319.25K /
8 Page |
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Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
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| Part No. |
M5M29FB800VP-10 M5M29FT800VP-10 M5M29FT800VP-12 M5M29FB800VP-12 M5M29FB800FP-10 M5M29FT800FP-10 M5M29FB800FP-12
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| OCR Text |
10,-12 may 1997 , rev.6.1 8,388,608-bit (1048,576-word by 8-bit / 524,288-word by16-bit) cmos 3.3v-only, block erase flash memory 1 mitsu...bits are set to "1"s by the write state machine and can only be reset by the clear status register c... |
| Description |
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY 8,388,608位(1048,576 - Word 524,288字BY16位)的CMOS 3.3只,块擦除闪
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| File Size |
145.96K /
14 Page |
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it Online |
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UTRON Technology
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| Part No. |
UT61L256JC-10 UT61L256JC-12 UT61L256JC-15 UT61L256JC-8 UT61L256LS-10 UT61L256LS-12 UT61L256LS-15
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| OCR Text |
...es fast access time : 8/10/12/15ns (max.) low operating power consumption: 60 ma (typical.) single 3.3v power suppl...bits. it is fabricated using high performance, high reliability cmos technology. the ut61l256 ... |
| Description |
Access time: 10 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM Access time: 12 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM Access time: 15 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM Access time: 8 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM
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| File Size |
152.76K /
10 Page |
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it Online |
Download Datasheet
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Price and Availability
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