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1.805 Datasheet PDF File

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				http:// PREMIER DEVICES, INC.
Part No.	PC1843DG-21H
OCR Text	... x 37.5 Watts 20 20 -70 Minimum 1805 <. 17 >25 >25 -75 Typical Maximum 1880 .30 Absolute Maximum Ratings Parameter Power Operating Temperature Storage Temperature Maximum 100 Watts CW -40 to +85 C -40 to +85 C Note: Typical values re...
Description	DROP-IN CIRCULATOR
File Size	77.75K / 1 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BLF6G20-180P
OCR Text	...-carrier W-CDMA [1] f (MHz) 1805 to 1880 VDS (V) 32 PL(AV) (W) 50 Gp (dB) 17.5 D (%) 27.5 ACPR (dBc) -35[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spac...
Description	UHF power LDMOS transistor From old datasheet system
File Size	40.56K / 8 Page	View it Online	Download Datasheet

				PROTEC[Protek Devices]
Part No.	SM20M05-1805 SM20M05-18-LF-T13 SM20M05-18-T13 SM20M05-18
OCR Text	05067 SM20M05-18 Only One Name Means ProT ek'TionTM ST ANDARD CAPACIT ANCE TVS ARRA Y APPLICA TIONS Multiple I/O Port Protection Board Level Interface Connection RS-232, RS-422 & RS-423 Data Lines Portable Electronics IEC COMPA ...
Description	STANDARD CAPACITANCE TVS ARRAY
File Size	97.07K / 4 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	MC100EP16VS MC100EP16VSD MC100EP16VSDR2 MC100EP16VSDR2G MC3100EP16VSDT MC3100EP16VSDTG MC100EP16VSMNR4G MC100EP16VSDG MC100EP16VSDTR2 MC100EP16VSDTR2G MC100EP16VSMNR4
OCR Text	...ent D D 0.5 -150 2105 2075 1355 1805 VEE 2.0 1905 Min 30 2155 Typ 36 Max 42 2405 Min 31 2155 25C Typ 38 Max 44 2405 Min 32 2155 85C Typ 40 Max 48 2405 Unit mA mV mV 1355 1490 See Fig.2 2230 1605 1355 1520 See Fig.2 1605 ...
Description	3.3V / 5V ECL Differential Receiver/Driver with Variable Output Swing
File Size	164.79K / 12 Page	View it Online	Download Datasheet

				PREMIER DEVICES, INC.
Part No.	PI1843DG-41H
OCR Text	... Return Loss (dB) 23 23 Minimum 1805 .18 >25 >25 Typical Maximum 1880 .25 Absolute Maximum Ratings Parameter Forward Power Reverse Power Operating Temperature Storage Temperature Maximum 100 Watts 100 Watts -40 to +85 C -40 to +85 C ...
Description	HIGH POWER DROP-IN ISOLATOR
File Size	76.54K / 1 Page	View it Online	Download Datasheet

				Silicon Laboratories
Part No.	SI4300
OCR Text	...g conditions RBW = 100 kHz, f = 1805-1880 MHz RBW = 100 kHz, f > 1880 MHz POUT = over all power levels, All combinations of the following: PIN = 3.5 to 9 dBm, APC < 2.0 V, TC = -20 to 85 C, VBAT = 3.0 to 4.8 V, Antenna VSWR 20:1, all angle...
Description	Dual-Band Monolithic Power Amplifier System
File Size	112.19K / 2 Page	View it Online	Download Datasheet

				MOTOROLA
Part No.	MRF18085AL
OCR Text	...s. Specified for GSM - GSM EDGE 1805- 1880 MHz. * GSM and GSM EDGE Performance, Full Frequency Band (1805 - 1880 MHz) Power Gain - 15 dB (Typ) @ 85 Watts CW Efficiency - 52% (Typ) @ 85 Watts CW * Capable of Handling 5:1 VSWR, @ 26 Vdc, 1840...
Description	1805鈥?880 MHz, 85 W, 26 V GSM/GSM EDGE Lateral N鈥揅hannel RF Power MOSFETs
File Size	388.15K / 8 Page	View it Online	Download Datasheet

				CONEXANT[Conexant Systems, Inc]
Part No.	RF210A RF210B
OCR Text	...pical Max Units 42 250 1805 350 1355 30 400 1990 450 1640 40 - j10 19 11 3 0.5 mA A MHz MHz MHz dB dB dB dB dB dB LNA1800IN = 1900 MHz GAINSEL = 0 GAINSEL = 1 GAINSEL = 1 1 0.5 No blocker, GAINSEL = 0 GAINSEL = 1 GAINS...
Description	Dual-Band. Image-Reject Downconverters For GSM Applications Dual-Band, Image-Reject Downconverters For GSM Applications
File Size	73.71K / 8 Page	View it Online	Download Datasheet

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