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TY Semiconductor Co., Ltd
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Part No. |
APM2301CAC
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OCR Text |
0 1 c a p i n d e s c r i p t i o n o r d e r i n g a n d m a r k i n g i n ...56m w (typ.) @ v gs = -4.5v r ds(on) = 85m w (typ.) @ v gs = -2.5v r ds(on) = 106m w (typ.) @ v g... |
Description |
Pin Description
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File Size |
245.14K /
3 Page |
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Infineon
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Part No. |
BCP52M
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OCR Text |
...voltage i c = 10 ma, i b = 0 45 60 100 - - - bcp 51m bcp 52m bcp 53m - - - v (br)cbo collector-base breakdown voltage i c = 100 a, i b = 0 v (br)ebo 5 emitter-base breakdown voltage i e = 10 a, i c = 0 - - na 100 c... |
Description |
PNP Silicon AF Transistor for AF driv...
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File Size |
94.27K /
4 Page |
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Wuxi NCE Power Semicond...
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Part No. |
NCE0117K
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OCR Text |
... v1.0 1 nce n-channel enhancement mode power mosfet description the nce0117k uses advanced trench technolog...56m ? ) high density cell design for ultra low rdson fully characterized avalanche voltage... |
Description |
NCE N-Channel Enhancement Mode Power MOSFET
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File Size |
444.22K /
7 Page |
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Wuxi NCE Power Semicond...
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Part No. |
NCE0117
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OCR Text |
... v1.0 1 nce n-channel enhancement mode power mosfet description the nce0117 uses advanced trench technology...56m ? ) high density cell design for ultra low rdson fully characterized avalanche voltage... |
Description |
NCE N-Channel Enhancement Mode Power MOSFET
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File Size |
341.35K /
7 Page |
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ST Microelectronics
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Part No. |
STP90NS04ZC
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OCR Text |
...s drain-source voltage (v gs = 0) 33 (1) 1. voltage is limited by zener diodes v v dg drain-gate voltage 33 (1) v v gs gate-source voltag...56m ? table 5. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pul... |
Description |
N-channel clamped 5mOhm - 80A TO-220
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File Size |
313.86K /
13 Page |
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it Online |
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