0.320 pdf Datasheet P14 Full Text Search --- IC-ON-LINE

0.320 Datasheet PDF File

For 0.320 Found Datasheets File :: 29144 Search Time::1.969ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |

				Panasonic Semiconductor
Part No.	2SA1310
OCR Text	...C3312 Unit: mm 4.00.2 3.00.2 0.70.1 s Features q q q q Allowing supply with the radial taping. Low noise voltage NV. High foward c...320 VCE=-5V fT -- IE VCB=-5V Ta=25C Forward current transfer ratio hFE 500 Ta=75C 400 25C ...
Description	Silicon PNP epitaxial planer type
File Size	36.47K / 2 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ117
OCR Text	...in V(BR)DSS I GSS -400 -- -- -2.0 -- Typ -- -- -- -- 5 Max -- 1 -1 -5.0 7 Unit V A mA V Test conditions I D = -10 mA, VGS = 0 VGS = 20 V, VDS = 0 VDS = -320 V, VGS = 0 I D = -1 mA, VDS = -10 V I D = -1 A, VGS = -15 V*1 S pF pF pF ns ns ns n...
Description	Silicon P-Channel MOS FET
File Size	17.38K / 3 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	2SJ221
OCR Text	...V(BR)GSS I GSS -100 20 -- -- -1.0 -- -- \|yfs\| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 7.5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.12 0.16 12 1800 680 145 15 115 320 170 -1.05 280 Max -- -- 10 -250 -2.0 0.16 0.22 -- -- -- -- -...
Description	Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0611-3 05; No. of Positions: 8; Connector Type Silicon P-Channel MOS FET
File Size	47.48K / 8 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	2SJ222
OCR Text	...V(BR)GSS I GSS -100 20 -- -- -1.0 -- -- \|yfs\| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 7.5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.12 0.16 12 1800 680 145 15 115 320 170 -1.05 280 Max -- -- 10 -250 -2.0 0.16 0.22 -- -- -- -- -...
Description	Silicon P-Channel MOS FET
File Size	33.29K / 6 Page	View it Online	Download Datasheet

				Renesas Electronics, Corp. HITACHI[Hitachi Semiconductor]
Part No.	2SJ352 2SJ351
OCR Text	...mbol Min V(BR)DSX -180 -200 20 -0.15 -- 0.7 -- -- -- -- -- Typ -- -- -- -- -- 1.0 800 1000 18 320 120 Max -- -- -- -1.45 -12 1.4 -- -- -- -- -- V V V S pF pF pF ns ns VDD = -30 V, ID = -4 A I G = 100 A, VDS = 0 I D = -100 mA, VDS = -10 V I ...
Description	Silicon P-Channel MOS FET 硅P沟道场效应晶体管
File Size	39.26K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ353 2SJ353-T D11216EJ1V0DS00
OCR Text	... PACKAGE DIMENSIONS (in mm) 7.0 MAX. 2.0 1.2 9.0 MAX. 0.55 0.1 4.0 MAX. 12.0 MIN. 0.8 0.1 0.6 0.1 FEATURES * Radial taping supporte...320 200 70 5 15 40 20 0.68 0.37 -1.6 MIN. TYP. MAX. -10 10 -2.0 UNIT A A V S pF pF pF ns ns ns...
Description	From old datasheet system P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING P-channel MOS-type silicon field effect transistor (-60
File Size	55.23K / 6 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ409 2SJ409L 2SJ409S
OCR Text	...)GSS I GSS Min -100 20 -- -- -1.0 -- -- Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-o...320 170 -1.05 280 Max -- -- 10 -250 -2.0 0.16 0.22 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S ...
Description	Silicon P-Channel MOS FET Power switching MOSFET
File Size	28.01K / 5 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ463 2SJ463A D11198EJ1V0DS00
OCR Text	... Package Drawings (unit: mm) 0.3 +0.1 -0 2.0 0.2 0.65 0.65 2 2.1 0.1 1.25 0.1 * Can be driven by a 2.5 V power source. 0.3 * Low ...320 pF pF pF ns ns ns ns VDS = -3 V VGS = 0 f = 1 MHz VDD = -3 V, ID = -10 mA VGS(on) = -4 V, ...
Description	From old datasheet system P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
File Size	60.00K / 8 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ517
OCR Text	... * Low on-resistance R DS(on) = 0.18 typ. (at V GS =-4V, ID =-1A) * Low drive current * High speed switching * 2.5V gate drive devices. ...320 190 90 14 75 90 90 -0.95 70 Max -- -- -10 10 -1.5 0.24 0.43 -- -- -- -- -- -- -- -- -- -- Unit V...
Description	Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
File Size	42.79K / 8 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	2SJ555
OCR Text	... * Low on-resistance R DS(on) = 0.017 typ. * Low drive current. * 4V gate drive devices. * High speed switching. Outline TO-3P D G...320 80 160 240 Gate Charge Qg (nc) -16 -20 400 5 2SJ555 Reverse Drain Current vs. Source t...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	52.90K / 9 Page	View it Online	Download Datasheet

For 0.320 Found Datasheets File :: 29144 Search Time::1.969ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |