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				FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
Part No.	2SK3923-01
OCR Text	...annel to ambient Min. 250 3.0 Typ. Max. 5.0 25 2.0 100 280 1170 135 9.0 18 4.5 35 9 33 11 9.0 1.50 250 1.25 Units V V A mA nA m S pF 5 220 10 780 90 6.0 12 3 23 6 22 7.0 6.0 1.00 120 0.5 ns nC V ns C Thermal...
Description	N-CHANNEL SILICON POWER MOSFET
File Size	90.73K / 4 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	2SK3934
OCR Text	...urce ON resistance: R DS (ON) = 0.23 (typ.) High forward transfer admittance: \|Yfs\| =8.2 S (typ.) Low leakage current: IDSS = 100 E (V DS = 500 V) A Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta...
Description	MOSFET 2SK/2SJ Series
File Size	75.67K / 7 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	2SK3934
OCR Text	...urce ON resistance: R DS (ON) = 0.23 (typ.) High forward transfer admittance: \|Yfs\| =8.2 S (typ.) Low leakage current: IDSS = 100 E (V DS = 500 V) A Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta...
Description	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) From old datasheet system
File Size	71.01K / 6 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	2SK971
OCR Text	...st conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 50 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 8 A, VGS = 10 V * -------------------------------------------------------------------------------------- -----------...
Description	Silicon N-Channel MOS FET
File Size	37.83K / 7 Page	View it Online	Download Datasheet

				Molex, Inc. FILTRONIC[Filtronic Compound Semiconductors]
Part No.	4144 4214 4234A 4004 4124 4134
OCR Text	... @ f (GHz) Input/Output GHz 1-2 0.6 1.25/1.25 2-4 0.4 1.25/1.25 2-6 0.7 1.35/1.35 3.7-4.2 0.4 1.20/1.20 3.7-4.2 0.4 1.20/1.20 4-8 0.8 1.35/1.35 8-18 0.6 1.60/1.50 NOTES: 1. 2. Isolation min (dB) 20 20 20 20 20 20 17 Amplitude Unbalan...
Description	POWER DIVIDERS FOUR-WAY, 1 TO 18 GHZ 功分4路，18 GHz
File Size	236.84K / 3 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	4AK19
OCR Text	...resistance N Channel: R DS(on) 0.5 , VGS = 10 V, ID = 2.5 A R DS(on) 0.6 , VGS = 4 V, ID = 2.5 A * 4 V gate drive devices. * High density mounting Outline SP-10 3 D 2G 4 G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1S ...
Description	Silicon N Channel MOS FET High Speed Power Switching
File Size	52.00K / 8 Page	View it Online	Download Datasheet

				hitachi
Part No.	4AK19
OCR Text	...esistance N Channel : R DS(on) 0.5, VGS = 10V, ID = 2.5A R DS(on) 0.6, VGS = 4V, ID = 2.5A * 4V gate drive devices. * High density mounting Outline 4AK19 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to sou...
Description	Silicon NPN Triple Diffused From old datasheet system
File Size	67.73K / 9 Page	View it Online	Download Datasheet

				hitachi
Part No.	4AK25
OCR Text	...es * Low on-resistance RDS(on) 0.45, VGS = 10V, ID = 1A * Low drive current * High speed switching * High density mounting 2 1 1 10 3 4 5 6 7 8 10 1, 10 ; Source 2, 4, 6, 8 ; Gate 3, 5, 7, 9 ; Drain 9 Table 1 Absolute Maximum Ratings (...
Description	Silicon NPN Triple Diffused From old datasheet system
File Size	34.00K / 3 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	4AK25
OCR Text	...s * Low on-resistance R DS(on) 0.45 , VGS = 10 V, I D = 1 A * Low drive current * High speed switching * High density mounting Outline SP-10 3 D 4 G 2G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1S S 10 1, 10. Sourc...
Description	Silicon N-Channel Power MOS FET Array
File Size	38.94K / 6 Page	View it Online	Download Datasheet

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