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  -48v.simple Datasheet PDF File

For -48v.simple Found Datasheets File :: 544    Search Time::2.297ms    
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    CPC7582 CPC7582BA CPC7582BA-TR CPC7582BB CPC7582BB-TR

Clare Inc.
Clare, Inc.
Clare Inc
Part No. CPC7582 CPC7582BA CPC7582BA-TR CPC7582BB CPC7582BB-TR
OCR Text ...ts V V A A VDD = 5V, VBAT = -48V, Idle/Talk State or All Off State Ringing State or Access State VDD Current VDD = 5V, Idle/Talk State or...simple logic level input control. Solid state switch construction means no impulse noise is generate...
Description Line Card Access Switch SPECIALTY TELECOM CIRCUIT, PDSO16

File Size 144.34K  /  12 Page

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    SML9030-T254 SML9030T254

Semelab(Magnatec)
TT electronics Semelab Limited
Seme LAB
Part No. SML9030-T254 SML9030T254
OCR Text ... VDS = -25V VDS = -60V VDS = -48V VGS = -20V VGS = 20V VGS = 0 VDS = -25V f = 1MHz ID = -18A VDS = -48V 1 Zero Gate Voltage Drain Current Forward Gate - Source Leakage Reverse Gate - Source Leakage DYNAMIC CHARACTERISTICS Input Capaci...
Description P-Channel MOS Transistor(Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω)(P沟道MOS晶体Vdss:-50V,Id(cont):-18A,Rds(on):0.14Ω))

File Size 20.30K  /  2 Page

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    AP4578GH

Advanced Power Electronics Corp.
Part No. AP4578GH
OCR Text ...=10V, ID=5A VDS=60V, VGS=0V VDS=48V, VGS=0V VGS=25V ID=5A VDS=48V VGS=4.5V VDS=30V ID=1A RG=3.3,VGS=10V RD=30 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Tu...
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 95.90K  /  7 Page

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    AP4578GM

Advanced Power Electronics Corp.
Part No. AP4578GM
OCR Text ...=10V, ID=4A VDS=60V, VGS=0V VDS=48V, VGS=0V VGS=20V ID=4A VDS=48V VGS=4.5V VDS=30V ID=1A RG=3.3,VGS=10V RD=30 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Tu...
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 83.48K  /  7 Page

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    AP4578M

Advanced Power Electronics Corp.
Part No. AP4578M
OCR Text ...=10V, ID=4A VDS=60V, VGS=0V VDS=48V, VGS=0V VGS=20V ID=4A VDS=48V VGS=4.5V VDS=30V ID=1A RG=3.3,VGS=10V RD=30 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Tu...
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 96.93K  /  7 Page

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    AP9478GM AP9478GM-14

Advanced Power Electronics ...
Advanced Power Electronics Corp.
Part No. AP9478GM AP9478GM-14
OCR Text ... C) o o VDS=60V, VGS=0V VDS=48V, VGS=0V VGS=25V ID=4A VDS=48V VGS=4.5V VDS=30V ID=1A RG=3.3,VGS=10V RD=30 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Tu...
Description Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 91.50K  /  4 Page

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    AP9478M

Advanced Power Electronics Corp.
Part No. AP9478M
OCR Text ... C) o o VDS=60V, VGS=0V VDS=48V, VGS=0V VGS=25V ID=4A VDS=48V VGS=4.5V VDS=30V ID=1A RG=3.3,VGS=10V RD=30 VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Tu...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 100.93K  /  4 Page

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    AP9575H AP9575J

Advanced Power Electronics, Corp.
Advanced Power Electronics Corp.
Part No. AP9575H AP9575J
OCR Text ...V, ID=-9A VDS=-60V, VGS=0V VDS=-48V, VGS=0V VGS= 25V ID=-9A VDS=-48V VGS=-4.5V VDS=-30V ID=-9A RG=3.3,VGS=-10V RD=3.3 VGS=0V VDS=-25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Tu...
Description P-CHANNEL ENHANCEMENT MODE P沟道增强

File Size 69.77K  /  4 Page

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    AP9575M

Advanced Power Electronics Corp.
Part No. AP9575M
OCR Text ...V, ID=-4A VDS=-60V, VGS=0V VDS=-48V, VGS=0V VGS=25V ID=-4A VDS=-48V VGS=-4.5V VDS=-30V ID=-1A RG=3.3,VGS=-10V RD=30 VGS=0V VDS=-25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn...
Description P-CHANNEL ENHANCEMENT MODE

File Size 69.34K  /  4 Page

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    ANACHIP[Anachip Corp]
Part No. AF9478PDA AF9478P AF9478PD
OCR Text ...V, ID=-5A VDS=-60V, VGS=0V VDS=-48V, VGS=0V VGS=25V ID=-5A VDS=-48V VGS=-4.5V VDS=-30V ID=-5A RG=3.3, VGS=-10V RD=6 VGS=0V VDS=-25V, f=1.0MHz Min. -60 -1 Limits Typ. -0.06 6 10 2 4 10 13 34 29 760 80 60 Max. 160 200 -3 -10 uA -25 100 16 122...
Description P-Channel Enhancement Mode Power MOSFET

File Size 414.24K  /  5 Page

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