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ShenZhen FreesCale Electronics. Co., Ltd
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Part No. |
AO4702
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OCR Text |
...features v ds (v) = 30v i d = 11a (v gs = 10v) r ds(on) < 16m ? (v gs = 10v) r ds(on) < 25m ? (v gs = 4.5v) schottky vds (v) = 30v, if = 3a, vf<0.5v@1a the ao4702 uses advanced trench technology to provide excellent r ds(on) and ... |
Description |
N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
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File Size |
249.66K /
5 Page |
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it Online |
Download Datasheet
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Icemos Technology
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Part No. |
ICE30N160
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OCR Text |
...y, single pulse e as i d =11a 500 mj avalanche current, repetitive i ar limited by t j max 10 a mosfet d v /d t ruggedness d v /d t v ds =480v, i d =22a, t j =125 o c 50 v/ns gate source voltage v ... |
Description |
Enhancement Mode MOSFET
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File Size |
556.49K /
9 Page |
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it Online |
Download Datasheet
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Price and Availability
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