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For w channel Found Datasheets File :: 105134 Search Time::1.921ms
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				IRF[International Rectifier]
Part No.	IRF7807 IRF7807A IRF7807ATR IRF7807TR
OCR Text	... 4 5 SO-8 T o p V ie w Device Features IRF7807 IRF7807A Vds 30V 30V Rds(on) 25m 25m Qg 17nC 17nC Qsw 5.2nC Qoss 16.8nC 16.8nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or S...
Description	8.3 A, 30 V, 0.025 ohm, N-channel, Si, POwER, MOSFET Chip-Set for DC-DC Converters 30V Single N-channel HEXFET Power MOSFET in a SO-8 package
File Size	238.61K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7811AV IRF7811AVTR
OCR Text	... 4 5 SO-8 T o p V ie w DEVICE CHARACTERISTICS IRF7811AV RDS(on) QG Qsw Qoss 11m 17nC 6.7nC 8.1nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS 4.5V) Pul...
Description	Si, SMALL SIGNAL, FET, MS-012AA N-channel Application-Specific MOSFETs
File Size	85.36K / 6 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7811A IRF7809A IRF7811ATR
OCR Text	... 4 5 SO-8 T o p V ie w DEVICE RATINGS IRF7809A VDS RDS(on) QG Qsw Qoss 30V 8.5 m 73 nC 22.5 nC 30 nC IRF7811A 28V 12 m 23 nC 7 nC 31 nC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous ...
Description	PROVISIONAL DATASHEET Chipset for DC-DC Converters 30V Single N-channel HEXFET Power MOSFET in a SO-8 package
File Size	124.48K / 4 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF840AL IRF840AS IRF840ASTRR
OCR Text	... (1.6mm from case ) Units A w w/C V V/ns C Typical SMPS Topologies l l l Two Transistor Forward Haft Bridge Full Bridge through ...channel HEXFET(R) Power MOSFETs www.irf.com 7 IRF840AS/L D2Pak Package Outline 1 0.54 (...
Description	TRANSISTOR \| MOSFET \| N-channel \| 500V V(BR)DSS \| 8A I(D) \| TO-263AB 晶体管\| MOSFET的\| N沟道\| 500V五（巴西）直\| 8A条（丁）\|63AB Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）最大值\u003d 0.85ohm，身份证\u003d 8.0A Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)
File Size	125.49K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF840A
OCR Text	... 10 lbfin (1.1Nm) Units A w w/C V V/ns C Typical SMPS Topologies: l l l Two Transistor Forward Haft Bridge Full Bridge 1 7/7/9...channel HEXFETS www.irf.com 7 IRF840A Package Outline TO-220AB Outline Dimensions are sho...
Description	Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A) Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)
File Size	87.92K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF840B IRFS840B IRFS840 IRF840
OCR Text	... Units V A A A V mJ A mJ V/ns w w/C C C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage...
Description	500V N-channel MOSFET
File Size	908.43K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF840LCL IRF840LCS
OCR Text	...0 (1.6mm from case) Units A w w w/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient (PCB...channel HEXFET(R) Power MOSFETs www.irf.com 7 IRF840LCS/LCL D2Pak Package Outline 1 0.5...
Description	Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）\u003d 0.85ohm，身份证\u003d 8.0A Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)
File Size	169.91K / 10 Page	View it Online	Download Datasheet

				TT electronics Semelab Limited SEME-LAB[Seme LAB]
Part No.	IRF9130SMD
OCR Text	...9 (0 .4 0 9 ) 2 -100V -8A w 0.35w 0 .7 6 (0 .0 3 0 ) m in . 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1) 9) 6) 4) 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 ...
Description	P-channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)) P-channel POwER MOSFET FOR HI.REL APPLICATIONS
File Size	20.44K / 2 Page	View it Online	Download Datasheet

				SEMELAB LTD SEME-LAB[Seme LAB]
Part No.	IRF9140
OCR Text	... ns C nH RJC RCS RJA C/w Notes 1) Pulse Test: Pulse width 300ms, 2% 2) Repetitive Rating - Pulse width limited by maximum junction temperature. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. ...
Description	P-channel POwER MOSFET
File Size	21.26K / 2 Page	View it Online	Download Datasheet

				Samsung semiconductor International Rectifier Intersil Corporation
Part No.	IRF9150
OCR Text	...55 to 150 300 UNITS V V A A A V w w/oC mJ A oC oC Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . ...
Description	-25A, -100V, 0.150 Ohm, P-channel Power MOSFET
File Size	56.86K / 7 Page	View it Online	Download Datasheet

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