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2SK2788 EAXXX 0N10E 03606LMD P4KE100 RW67V MEGA3 TM24064L
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    IRF1302L IRF1302S

IRF[International Rectifier]
Part No. IRF1302L IRF1302S
OCR Text ...VGS RD 131 RG 10V D.u.T. + ID , Drain Current (A) -VDD 88 Pulse width 1 s Duty Factor 0.1 % Fig 10a. Switching...w. Period D= P.w. Period [VGS=10V ] *** D.u.T. ISD waveform Reverse Recovery Current Body Dio...
Description Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?)
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A)
Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=174A)

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    IRF1302

IRF[International Rectifier]
Part No. IRF1302
OCR Text ...Y PACKAGE VDS VGS RD D.u.T. + 150 RG -VDD I D , Drain Current (A) 10V 100 Pulse width 1 s Duty Factor 0.1 % ...w. Period D= P.w. Period [VGS=10V ] *** D.u.T. ISD waveform Reverse Recovery Current Body D...
Description Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?)
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A)
Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=180A)

File Size 516.95K  /  9 Page

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    IRF1310NL IRF1310NS

IRF[International Rectifier]
Part No. IRF1310NL IRF1310NS
OCR Text ... V DS 40 RD VGS RG D.u.T. + I D , Drain Current (A) -V DD 30 10V Pulse width 1 s Duty Factor 0.1 % 20 Fig 1...w. Period D= P.w. Period VGS=10V * D.u.T. ISD waveform Reverse Recovery Current Body Diode ...
Description Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

File Size 152.94K  /  10 Page

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    IRF1310N

IRF[International Rectifier]
Part No. IRF1310N
OCR Text ... 50 VDS VGS RD 40 D.u.T. + RG I D , Drain Current (A) -VDD 30 10V Pulse width 1 s Duty Factor 0.1 % 20 ...w. Period D= P.w. Period VGS=10V * D.u.T. ISD waveform Reverse Recovery Current Body Diode ...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.036ohm/ Id=42A)
Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

File Size 92.91K  /  8 Page

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    IRF1310S

IRF[International Rectifier]
Part No. IRF1310S
OCR Text ...1 4 5 6 7 V DS = 50V 2 0 s P u L S E w ID TH 8 9 10 0.0 -6 0 -4 0 -20 0 20 40 60 VGS = 10V 80 100 120 140 160 180 V G S , G a te-to-S o urce V olta ge (V ) TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteri...
Description Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A)

File Size 319.11K  /  8 Page

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    IRF1404L IRF1404S

IRF[International Rectifier]
Part No. IRF1404L IRF1404S
OCR Text ... PACKAGE RD VGS 160 D.u.T. + RG I D , Drain Current (A) -VDD 120 10V Pulse width 1 s Duty Factor 0.1 % 80 ...w. Period D= P.w. Period VGS=10V * D.u.T. ISD waveform Reverse Recovery Current Body Diode ...
Description Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?)
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A)

File Size 237.30K  /  10 Page

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    IRF1404

International Rectifier
Part No. IRF1404
OCR Text ... PACKAGE RD VGS 160 D.u.T. + RG I D , Drain Current (A) -VDD 120 10V Pulse width 1 s Duty Factor 0.1 % 80 ...w. Period D= P.w. Period VGS=10V * D.u.T. ISD waveform Reverse Recovery Current Body Diode ...
Description Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A?)
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=162A)
Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=162A)

File Size 105.33K  /  8 Page

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    IRF1405L IRF1405S

IRF[International Rectifier]
Part No. IRF1405L IRF1405S
OCR Text ..., Drain Current (A) 120 D.u.T. + RG -VDD 10V 80 Pulse width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circui...w. Period D= P.w. Period [VGS=10V ] *** D.u.T. ISD waveform Reverse Recovery Current Body D...
Description Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?
Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=131A)
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A)
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?)
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 153.38K  /  11 Page

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    IRF1405

International Rectifier
Part No. IRF1405
OCR Text ...E 160 VDS VGS RG RD D.u.T. + I D , Drain Current (A) -VDD 120 10V Pulse width 1 s Duty Factor 0.1 % 80 Fig 1...w. Period D= P.w. Period [VGS=10V ] *** D.u.T. ISD waveform Reverse Recovery Current Body D...
Description Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?)
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A)
Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=169A)

File Size 114.28K  /  9 Page

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    IRF1407L IRF1407S IRF1407STRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF1407L IRF1407S IRF1407STRR
OCR Text ...ce Effective Output Capacitance u Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Q Diode Forward Voltag...w. Period D= P.w. Period [VGS=10V ] *** D.u.T. ISD waveform Reverse Recovery Current Body D...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?)
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A)
Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A)
TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 75V的五(巴西)直| 100号A(丁)|63AB

File Size 158.12K  /  11 Page

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