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ONSEMI[ON Semiconductor]
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| Part No. |
MGY25N120_D ON1934 MGY25N120
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| OCR Text |
...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Ambient Maximum Lead Temperature for ...303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.co... |
| Description |
Insulated Gate Bipolar Transistor 38 A, 1200 V, N-CHANNEL IGBT, TO-264
IGBT IN TO-264 A @ 90 38 A @ 25 1200 VOLTS SHORT CIRCuIT RATED
From old datasheet system
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| File Size |
149.81K /
5 Page |
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ONSEMI[ON Semiconductor]
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| Part No. |
MGP20N60u_D ON1866 MGP20N60u ON1865
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| OCR Text |
... VGE = 15 Vdc, L = 300 mH, Vd H RG = 20 , TJ = 125C) 125 C) Energy losses include "tail" (VCC = 360 Vd IC = 10 Ad Vdc, Adc, VGE = 15 Vdc, L ...303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.co... |
| Description |
IGBT IN TO-220 20 A @ 90 31 A @ 25 600 VOLTS
From old datasheet system
Insulated Gate Bipolar Transistor
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| File Size |
116.77K /
5 Page |
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it Online |
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Hitachi,Ltd.
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| Part No. |
2SK2938
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| OCR Text |
...Tc = 25C 3. Value at Tch = 25C, Rg 50
2
2SK2938(L), 2SK2938(S)
Electrical Characteristics (Ta = 25C)
Item Symbol Min 60 20 -- -- 1....303-297-0447 Hitachi Europe GmbH Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Te... |
| Description |
Silicon N Channel MOS FET(N娌??MOSFET)
Silicon N Channel MOS FET(N沟道MOSFET) 通道场效应晶体管（不适用沟道MOSFET的）
From old datasheet system
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| File Size |
73.83K /
10 Page |
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it Online |
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ONSEMI[ON Semiconductor]
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| Part No. |
MGW20N120_D ON1922 MGW20N120
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| OCR Text |
...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Ambient Maximum Lead Temperature for ...303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.co... |
| Description |
Insulated Gate Bipolar Transistor
From old datasheet system
IGBT IN TO-47 20 A @ 90 28 A @ 25 1200 VOLTS
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| File Size |
135.63K /
5 Page |
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it Online |
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Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
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| Part No. |
MGP20N60u
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| OCR Text |
... VGE = 15 Vdc, L = 300 mH, Vd H RG = 20 , TJ = 125C) 125 C) Energy losses include "tail" (VCC = 360 Vd IC = 10 Ad Vdc, Adc, VGE = 15 Vdc, L ...303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.co... |
| Description |
Insulated Gate Bipolar Transistor 31 A, 600 V, N-CHANNEL IGBT, TO-220AB
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| File Size |
116.62K /
6 Page |
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it Online |
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MOTOROLA[Motorola, Inc]
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| Part No. |
MHPM7A30E60DC3
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| OCR Text |
...1100T3 MC33153 MBRS1100T3 120 W RG(on) 20 W RG(off) MBRS1100T3
-20
-10
0
10
20
30
VGE, GATE-TO-EMITTER VOLTAGE (VOLTS)
...303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.co... |
| Description |
Hybrid Power Module
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| File Size |
165.08K /
6 Page |
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it Online |
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Motorola Inc
MOTOROLA[Motorola, Inc]
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| Part No. |
PHPM7A10S120DC3 MHPM7A10S120DC3
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| OCR Text |
...= 125C
+15 V MBRS130T3 220 W RG(on) 20 W RG(off) MBRS130T3 MBRS130T3
MC33153
Figure 5. Recommended Gate Drive Circuit
Motorola I...303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.co... |
| Description |
Hybrid Power Module
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| File Size |
160.85K /
6 Page |
View
it Online |
Download Datasheet |
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