nitride pdf Datasheet P13 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : 12B30 A105M NSL05 SI3850DV 25V5X 25K06 AK8451 MJD47G
	Product Description
	Full Text Search

nitride Datasheet PDF File

For nitride Found Datasheets File :: 2679 Search Time::1.203ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTB20080
OCR Text	...applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 25 Watts, 1.6-1.7 GHz Class AB Characteristics 40% Collector Efficiency at...
Description	25 Watts, 1.6-1.7GHz RF Power Transistor 25 Watts, 1.6-1.7 GHz RF Power Transistor 25 Watts 1.6-1.7 GHz RF Power Transistor
File Size	444.75K / 3 Page	View it Online	Download Datasheet

				Vishay Intertechnology, Inc. VISHAY THIN FILM
Part No.	VTSRC20AB680220TF VTSRC20AB680220UF VTSRC20AB121220TF VSORC20AB121220TF AB121330TF VSORC20AB820680TF VTSRC20AB820680UF VTSRC20AB820680TF
OCR Text	...ns conditions material tantalum nitride on silicon resistance range 10 to 750 tcr: tracking 10 ppm/c absolute 200 ppm/c 0 c to + 70 c tolerance: absolute 10 % standard (r) absolute 20 % standard (c) at 1 mhz and v rms over + 10 c...
Description	RC NETWORK, BUSSED, 1W, 68ohm, 0.000022uF, SURFACE MOUNT, TSSOP-20 TSSOP, ROHS COMPLIANT RC NETWORK, BUSSED, 1W, 120ohm, 0.000022uF, SURFACE MOUNT, TSSOP-20 RC NETWORK, BUSSED, 1.2W, 120ohm, 0.000022uF, SURFACE MOUNT, SOIC-20 RC NETWORK, BUSSED, 1W, 120ohm, 0.000033uF, SURFACE MOUNT, TSSOP-20 RC NETWORK, BUSSED, 1.2W, 120ohm, 0.000033uF, SURFACE MOUNT, SOIC-20 RC NETWORK, BUSSED, 1.2W, 82ohm, 0.000068uF, SURFACE MOUNT, SOIC-20 RC NETWORK, BUSSED, 1W, 82ohm, 0.000068uF, SURFACE MOUNT, TSSOP-20
File Size	97.28K / 4 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson]
Part No.	PTB20082
OCR Text	...applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 10 Watts Linear Power Output Power at 1 dB Compressed = 15 W Class AB Cha...
Description	15 Watts/ 1.8-2.0 GHz Cellular Radio RF Power Transistor 15 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor
File Size	167.51K / 4 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson]
Part No.	PTB20091
OCR Text	...output power. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 30 Watts (P-Sync), 470-860 MHz Class A Characteristics Silicon...
Description	30 Watts, 470-860 MHz UHF TV Linear Power Transistor
File Size	356.77K / 2 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson]
Part No.	PTB20095
OCR Text	...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 15 Watts, 915-960 MHz Class AB Characteristics Specified 25 Vo...
Description	15 Watts 915-960 MHz Cellular Radio RF Power Transistor 15 Watts, 915-960 MHz Cellular Radio RF Power Transistor
File Size	44.15K / 3 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson]
Part No.	PTB20097
OCR Text	...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 40 Watts, 915-960 MHz Class AB Characteristics 50% Collector E...
Description	40 Watts, 915-960 MHz Cellular Radio RF Power Transistor
File Size	46.91K / 3 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson]
Part No.	PTB20101
OCR Text	...output power. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 28 Volt, 860 MHz Characteristics - Output Power = 175 Watts P-Sync...
Description	175 Watts P-Sync, 470-860 MHz UHF TV Power Transistor
File Size	44.19K / 3 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTB20105
OCR Text	...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. Class AB Characteristics Performance at 960 MHz, 25 VCC - Outpu...
Description	20 Watts, 92560 MHz Cellular Radio RF Power Transistor 20 Watts, 925-960 MHz Cellular Radio RF Power Transistor
File Size	45.36K / 3 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson]
Part No.	PTB20111
OCR Text	...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 25 Volt, 860-900 MHz Characteristics - Output Power = 85 Watts - C...
Description	85 Watts, 860-900 MHz Cellular Radio RF Power Transistor
File Size	46.83K / 3 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTB20125
OCR Text	...TDMA systems. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 100 Watts, 1.8-2.0 GHz Class AB Characteristics 40% Collector Efficiency a...
Description	100 Watts, 1.8.0 GHz PCN/PCS Power Transistor 100 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor 100瓦，1.8-2.0 GHz的PCN / PCS的功率晶体管
File Size	234.90K / 5 Page	View it Online	Download Datasheet

For nitride Found Datasheets File :: 2679 Search Time::1.203ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |