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SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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Part No. |
KBE00G003M-D411 KBE00G003M-D4110
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OCR Text |
...)byte - random access : 15 s(max.) - serial page access : 50ns(min.) ? fast write cycle time - program time : 200 s(typ.) - bloc...1gb nand flash memory dq0 to dq15 512mb mobile sdram v dd v ddq v cc v ccq v ss v ss v ssq
kbe00g0... |
Description |
NAND 512Mb*2 Mobile SDRAM 256Mb*2 NAND闪存12Mb * 2移动SDRAM 256Mb 2 SPECIALTY MEMORY CIRCUIT, PBGA107
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File Size |
1,254.33K /
89 Page |
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it Online |
Download Datasheet
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SAMSUNG[Samsung semiconductor]
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Part No. |
KBE00F005A-D411 KBE00F005A
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OCR Text |
...+ 16)Byte - Random Access : 15s(Max.) - Serial Page Access : 50ns(Min.) * Fast Write Cycle Time - Program time : 200s(Typ.) - Block Erase Ti...1Gb NAND Flash Memory
IO0 to IO7
Vdd
Vddq
Vss
Vssq
CLK CKE CS CS1 RAS CAS WEd A0~A... |
Description |
512Mb NAND*2 256Mb Mobile SDRAM*2
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File Size |
1,346.36K /
87 Page |
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it Online |
Download Datasheet
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SAMSUNG[Samsung semiconductor]
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Part No. |
KBE00G003M-D411 KBE00G003M
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OCR Text |
...+ 16)Byte - Random Access : 15s(Max.) - Serial Page Access : 50ns(Min.) * Fast Write Cycle Time - Program time : 200s(Typ.) - Block Erase Ti...1Gb NAND Flash Memory
IO0 to IO7
Vdd
Vddq
Vss
Vssq
CLK CKE CS RAS CAS WEd A0~A12 B... |
Description |
NAND 512Mb*2 Mobile SDRAM 256Mb*2
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File Size |
1,236.80K /
89 Page |
View
it Online |
Download Datasheet
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Samsung Electronics
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Part No. |
KFG1G16Q2C
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OCR Text |
...rogram ?? multi block erase ? (max 64 blocks) ? erase suspend/resume ?? copyback ? (edc) ? (ecc) lock/unlock/lock-tight ?? ecc external (...1gb operating temperature range e : extended temp. (-30 c to 85 c) page architecture 2 ... |
Description |
1Gb OneNAND C-die
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File Size |
1,255.08K /
142 Page |
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it Online |
Download Datasheet
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Price and Availability
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