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Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDS2582
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| OCR Text |
...y Time Reverse Recovered Charge ISD = 4.1A ISD = 2A ISD= 4.1A, dISD/dt= 100A/s ISD= 4.1A, dISD/dt= 100A/s 1.25 1.0 63 116 V V ns nC
Notes: 1: Starting TJ = 25C, L = 56mH, IAS = 3A. 2: RJA is the sum of the junction-to-case and case-to-am... |
| Description |
Discrete Commercial N-Channel UltraFET TRENCH MOSFET, 150V, 4.5A, 0.060 Ohm @ Vgs = 10V, SO-8 Package
12 AMP MINIATURE POWER RELAY
N-Channel PowerTrench MOSFET 150V/ 4.1A/ 66m
N-Channel PowerTrench MOSFET 150V, 4.1A, 66mз
N-Channel PowerTrench MOSFET 150V, 4.1A, 66m?/a>
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| File Size |
215.08K /
11 Page |
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意法半导
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STP12NM50FP STB12NM50 STB12NM50-1 STB12NM50T4 STP12NM50
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| OCR Text |
...ited by safe operating area (1) ISD 12A, di/dt 400A/s, VDD V(BR)DSS, Tj T JMAX. (*) Limited only by maximum temperature allowed
Table 4: Thermal Data
TO-220/ DPAK / IPAK Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Therm... |
| Description |
N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh]Power MOSFET
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| File Size |
339.04K /
14 Page |
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STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
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| Part No. |
STP12PF06 STF12PF06
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| OCR Text |
...48 60 0.4 6 200 -55 to 175
(1) ISD 12A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX (2) Starting Tj = 25 oC, ID = 12A, VDD= 25V
Value STF20PF06
Unit V V V A A A W W/C V/ns mJ C
8 5.6 32 225 0.17
(*) Pulse width limited by safe opera... |
| Description |
P-CHANNEL 60V - 0.18 ohm - 12A TO-220/TO-220FP STripFET II POWER MOSFET P通道60V 0.18欧姆-2A TO-220/TO-220FP STripFET二功率MOSFET
From old datasheet system
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| File Size |
258.86K /
10 Page |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STP130NH02L B130NH02L P130NH02L STB130NH02L STB130NH02LT4
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| OCR Text |
... 10: SOURCE DRAIN DIODE
Symbol ISD ISDM VSD (5) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltag...1.3 Unit A A V ns nC A
ISD = 90 A di/dt = 100A/s Tj = 150C VDD = 15 V (see test circuit, Figure 5... |
| Description |
N-CHANNEL 24V - 0.0034 ?- 120A D2PAK/TO-220 STripFET III POWER MOSFET FOR DC-DC CONVERSION
N-CHANNEL 24V - 0.0034 з - 120A D?PAK/TO-220 STripFET⑩ III POWER MOSFET FOR DC-DC CONVERSION
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| File Size |
315.93K /
13 Page |
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Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
HUF76132SK8 HUF76132SK8T
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| OCR Text |
...tage SYMBOL VSD TEST CONDITIONS ISD = 11.5A ISD = 3.3A Reverse Recovery Time Reverse Recovered Charge trr QRR ISD = 3.3A, dISD/dt = 100A/s ISD = 3.3A, dISD/dt = 100A/s MIN TYP MAX 1.25 1.1 58 87 UNITS V V ns nC
Typical Performance Curves... |
| Description |
11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 11.5 A, 30 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
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| File Size |
259.00K /
12 Page |
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New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
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| Part No. |
IRF220 IRF223 IRF221 IRF222
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| OCR Text |
... reverse recovery charge symbol isd !sdm vsd trr qrr test conditions modified mosfet symbol showing the integral reverse p-n junction rectif...1.8 - - units a a a a v v ns nc
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| Description |
Nanosecond Switching Speeds
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| File Size |
131.12K /
3 Page |
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