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For intensive-contact Found Datasheets File :: 473 Search Time::3.812ms
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				Samsung
Part No.	K9G4G08B0A K9G4G08U0A K9L8G08U1A-I
OCR Text	...rgining of data. Even the write-intensive systems can take advantage of the K9G4G08X0As extended reliability of 5K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9G4G08X0A is an optim...
Description	Preliminary FLASH MEMORY (K9G4G08U0A / K9G4G08B0A) Flash Memory
File Size	920.59K / 44 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K9K2G08U0M-FIB0 K9K2G08U0M-VCB0 K9K2G08U0M-VIB0 K9K2G08U0M-FCB0 K9K2G08Q0M-YIB0 K9K2G08U0M-YIB0 K9K2G16Q0M-YIB0 K9K2G16U0M-YIB0 K9K2G08Q0M-PCB0 K9K2G08U0M-PCB0 K9K2G16Q0M-PCB0 K9K2G16U0M-PCB0 K9K2G16U0M-PIB0 K9K2G16U0M-YCB0 K9K2G16Q0M-YCB0 K9K2G08U0M-PIB0 K9K2G16Q0M-PIB0 K9K2G08U0M-YCB0 K9K2G08Q0M-YCB0 K9K2G08Q0M-PIB0
OCR Text	...rgining of data. Even the write-intensive systems can take advantage of the K9K2GXXX0Ms extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K2GXXX0M is an opt...
Description	256M x 8 Bit / 128M x 16 Bit NAND Flash Memory 256M × 8 128M的16位NAND闪存
File Size	742.51K / 38 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K9F1G08U0M-FIB0 K9F1G08U0M-YCB0 K9F1G16Q0M-YCB0 K9F1G16U0M-YIB0 K9F1G08U0M-YIB0 K9F1G08Q0M-YCB0 K9F1G16U0M-YCB0 K9F1G16Q0M-YIB0 K9F1G08Q0M-YIB0 K9F1G08U0M-VCB0 K9F1G08U0M-FCB0 K9F1G08Q0M-PCB0 K9F1G08U0M-PCB0 K9F1G16Q0M-PCB0 K9F1G16U0M-PCB0 K9F1G16Q0M-PIB0 K9F1G08Q0M-PIB0 K9F1G08U0M-PIB0 K9F1G16U0M-PIB0 K9F1G08U0M-VIB0
OCR Text	...rgining of data. Even the write-intensive systems can take advantage of the K9F1GXXX0Ms extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1GXXX0M is an opt...
Description	DSUB DBM25PK 1Gb Gb 1.8V NAND Flash Errata 1Gb的NAND闪存千兆1.8V的勘误表 Industrial Mid-Range Soldering Iron; Power Rating:60W; Tip Temperature:850 F; Features:Incls.: One 67D 1/4" Dia., 3-3/8" L Long-Tapered Diamond-Style Paragon Soldering Tip RoHS Compliant: Yes
File Size	724.12K / 38 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K9F2808U0C-XIB0 K9F2808U0C-FCB0 K9F2808U0C-FIB0 K9F2816U0C-PCB0 K9F2808Q0C-HIB0 K9F2808U0C-HIB0 K9F2816Q0C-HIB0 K9F2816U0C-HIB0 K9F2808U0C-P K9F2808U0C-PIB0 K9F2808Q0C-HCB0 K9F2808U0C-HCB0 K9F2808U0C-V K9F2808U0C-Y K9F2808U0C-XCB0 K9F2816U0C-PIB0 K9F2816U0C-HCB0 K9F2808U0C-PCB0 K9F2816Q0C-HCB0
OCR Text	...rgining of data. Even the write-intensive systems can take advantage of the K9F2808U0C's extended reliability of 100K program/erase cycles b...contact with Samsung. Table 1. COMMAND SETS Function Read 1 Read 2 Read ID Reset Page Program Bl...
Description	INTERNAL SNGL-DRV LOOP CABLE C 16M x 8 Bit NAND Flash Memory 1,600 × 8位NAND闪存 DB50 MALE/ DB50 MALE 2FT 1,600 × 8位NAND闪存
File Size	674.89K / 31 Page	View it Online	Download Datasheet

				Samsung Electronics
Part No.	K9F2G08U0A K9F2G08R0A
OCR Text	...rgining of data. Even the write-intensive systems can take advantage of the K9F2G08X0As extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F2G08X0A is an opt...
Description	(K9F2G08UxA) Flash Memory
File Size	1,140.50K / 49 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	K9F2G08U0A K9F2G08U0A-I K9F2G08U0A-P K9F2G08UXA K9F2G08R0A K9F2G08R0A-J
OCR Text	...rgining of data. Even the write-intensive systems can take advantage of the K9F2G08X0As extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F2G08X0A is an opt...
Description	FLASH MEMORY
File Size	988.48K / 44 Page	View it Online	Download Datasheet

				Actel Corp
Part No.	A500K130
OCR Text	...ers implementing clock resource intensive applications can easily route external or gated internal clocks using global routing spines. Users...contact with the package. When the estimated power consumption exceeds the maximum allowed power, ot...
Description	ProASIC 500K Family
File Size	570.59K / 72 Page	View it Online	Download Datasheet

				Samsung Electronics
Part No.	KAG00J007M-FGG2
OCR Text	... command inputs. Even the write-intensive systems can take advantage of flashs extended reliability of 100K program/erase cycles with real t...contact to the memory marketing team in samsung electronics when considering the use of a product co...
Description	MCP Memory
File Size	1,410.58K / 74 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	K9F6408U0C-V K9F6408U0C K9F6408U0C-B K9F6408U0C-F K9F6408U0C-H K9F6408U0C-Q K9F6408U0C-T
OCR Text	...rgining of data. Even the write-intensive systems can take advantage of the K9F6408U0Cs extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. These algorithms have be...
Description	From old datasheet system 8M x 8 Bit NAND Flash Memory
File Size	679.41K / 30 Page	View it Online	Download Datasheet

				Samsung Electronics
Part No.	K9F8G08B0M K9F8G08U0M
OCR Text	...rgining of data. Even the write-intensive systems can take advantage of the K9F8G08X0Ms extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mappingout algorithm. The K9F8G08X0M is an opti...
Description	FLASH MEMORY
File Size	1,241.38K / 54 Page	View it Online	Download Datasheet

For intensive-contact Found Datasheets File :: 473 Search Time::3.812ms
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