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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
QM100HA-H QM100HY-H
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Description |
MITSUBISHI transistor MODULES HIGH POWER SWITCHING USE INSULATED TYPE Integrated Gate Bipolar transistor (igbt) Modules: 250V
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File Size |
84.94K /
5 Page |
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it Online |
Download Datasheet
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Part No. |
PM300DHA060
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Description |
transistor | igbt POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 300A I(C) transistor|igbtPOWERMODULE|HALFBRIDGE|600VV(BR)CES|300AI(C)
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File Size |
330.30K /
6 Page |
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it Online |
Download Datasheet
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TOSHIBA[Toshiba Semiconductor]
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Part No. |
GT50J325
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Description |
Insulated Gate Bipolar transistor Silicon N Channel igbt High Power Switching Applications Fast Switching Applications TOSHIBA Insulated Gate Bipolar transistor Silicon N Channel igbt
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File Size |
168.29K /
7 Page |
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it Online |
Download Datasheet
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Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
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Part No. |
GT5J331_SM GT5J311 GT5J331SM GT5J311SM
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Description |
transistor | igbt | N-CHAN | 600V V(BR)CES | 5A I(C) | TO-263AB N CHANNEL igbt(HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) N CHANNEL igbt(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
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File Size |
292.45K /
6 Page |
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it Online |
Download Datasheet
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Price and Availability
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