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For id-4.0a Found Datasheets File :: 5400 Search Time::2.515ms
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				FAIRCHILD[Fairchild Semiconductor] ETC
Part No.	SSI7N60B SSW7N60 SSW7N60B SSW7N60B_SSI7N60B
OCR Text	...te Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Cont...4.4 28 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/C C C Gate-...
Description	600V N-Channel MOSFET From old datasheet system
File Size	653.59K / 9 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor] Samsung semiconductor
Part No.	SSP7N60 SSP7N60B SSS7N60B
OCR Text	...te Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25C unless otherwise noted Parameter Drain-Source Vo...4.4 28 30 (Note 2) (Note 1) (Note 1) (Note 3) SSS7N60B 7.0 * 4.4 * 28 * 420 7.0 14.7 5.5 Uni...
Description	600V N-Channel MOSFET
File Size	912.76K / 11 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDS2734
OCR Text	... Max rDS(on) =117m at VGS =10V, ID = 3.0A Max rDS(on) =126m at VGS = 6V, ID = 2.8A Fast switching speed High performance trench low rDS(on) ...4 3 2 1 Pin 1 S S S G 7 8 MOSFET Maximum Ratings Symbol VDS VGS ID EAS PD TJ, ...
Description	N-Channel UItraFET Trench MOSFET 250V, 3.0A, 117mohm
File Size	357.44K / 6 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFR9120NPBF IRFU9120NPBF IRFR9120NTR IRFR9120NTRLPBF IRFR9120NTRR IRFR9120NTRRPBF IRFR9120NPBF-15
OCR Text	... -100V RDS(on) = 0.48 G S ID = -6.6A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing...4.2 -26 40 0.32 20 100 -6.6 4.0 -5.0 -55 to + 150 300 (1.6mm from case ) Units A W W/C V mJ A m...
Description	6.6 A, 100 V, 0.48 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA 6.6 A, 100 V, 0.48 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA HEXFET Power MOSFET ( VDSS = -100V , RDS(on) = 0.48Ω , ID = -6.6A ) HEXFET Power MOSFET ( VDSS = -100V , RDS(on) = 0.48ヘ , ID = -6.6A ) ULTRA LOW ON RESISTANCE
File Size	256.09K / 11 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRLM6402GPBF IRLML6402GPBF
OCR Text	...Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipat...
Description	HEXFETPower MOSFET HEXFET Power MOSFET
File Size	177.48K / 8 Page	View it Online	Download Datasheet

				Advanced Power Electronics, Corp. Advanced Power Electronics Corp.
Part No.	AP4501SD
OCR Text	...ER MOSFET N-CH BVDSS RDS(ON) ID P-CH BVDSS RDS(ON) ID D1 30V 27m 7A -30V 49m -5A D2 PDIP-8 S1 S2 G1 Description The Advan...4.2 -30 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperat...
Description	30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	112.60K / 11 Page	View it Online	Download Datasheet

				GTM CORPORATION
Part No.	GTT8209E
OCR Text	...E POWER MOSFET BVDSS RDS(ON) ID 20V 21m 7A The GTT8209E used advanced trench technology to provide excellent on-resistance extremel...4 ISSUED DATE :2006/08/08 REVISED DATE : Electrical Characteristics (Tj = 25 : unless otherwi...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	300.31K / 4 Page	View it Online	Download Datasheet

				E-Tech Electronics LTD GTM CORPORATION
Part No.	GT2603
OCR Text	...E POWER MOSFET BVDSS RDS(ON) ID -20V 65m -5.0A The GT2603 utilized advanced processing techniques to achieve the lowest possible on...4 -20 2 0.016 -55 ~ +150 Ratings 62.5 Unit V V A A A W W/ Thermal Data Parameter Thermal Re...
Description	P - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T P-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	353.36K / 4 Page	View it Online	Download Datasheet

				Weitron Technology
Part No.	WTC2309
OCR Text	...wise Specified) Symbol VDS VGS ID I DM PD R JA TJ , Tstg Value -30 20 -3.7 -3.0 -12 1.38 90 -55~+150 Unit V A Total Power Dis...4.5V,I D=-2.6A Forward Transconductance VDS =-10V, ID =-3A g fs R DS(o n) 5.0 75 120 m I DSS -25 V(B...
Description	P-Channel Enhancement Mode Power MOSFET
File Size	390.88K / 6 Page	View it Online	Download Datasheet

				Weitron Technology
Part No.	WTC2307
OCR Text	...wise Specified) Symbol VDS VGS ID I DM Value -16 8 -4.0 -3.3 -12 1.38 90 -55~+150 Unit V A Total Power Dissipation (TA=25C) PD R JA TJ , Tstg W C/W C Maximum (Thermal Resistance) Junction-ambient 3 Operating Junct...
Description	P-Channel Enhancement Mode Power MOSFET
File Size	448.28K / 6 Page	View it Online	Download Datasheet

For id-4.0a Found Datasheets File :: 5400 Search Time::2.515ms
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