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    K4S281633D-N1H K4S281633D-N1L K4S281633D-N75 K4S281633D-RL

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S281633D-N1H K4S281633D-N1L K4S281633D-N75 K4S281633D-RL
OCR Text ...y K4S281633D-RL(N) Revision history Revision 0.0 (February 21. 2001, Target) CMOS SDRAM * First generation of 128Mb Low Power SDRAM without special function (V DD 3.0V, VDDQ 3.0V) Revision 0.1 (June 4. 2001, Target) * Additio...
Description IC REG ULDO DUAL 2.8/1.5V 6-MLF
8Mx16 SDRAM 54CSP
2M x 16Bit x 4 Banks SDRAM in 54CSP Data Sheet

File Size 66.22K  /  10 Page

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    K4S510832B-TC75 K4S510832B-TCL75 K4S510432B-TC K4S510432B-TC75 K4S510432B-TCL75 K4S511632B-TC75 K4S511632B-TCL75

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4S510832B-TC75 K4S510832B-TCL75 K4S510432B-TC K4S510432B-TC75 K4S510432B-TCL75 K4S511632B-TC75 K4S511632B-TCL75
OCR Text ...b B-die (x4, x8, x16) Revision history Revision 1.0 (January, 2004) - First release. Revision 1.1 (February, 2004) - Corrected typo. CMOS SDRAM Rev. 1.1 February 2004 SDRAM 512Mb B-die (x4, x8, x16) CMOS SDRAM 32M x 4Bit x ...
Description 512Mb B-die SDRAM Specification

File Size 147.30K  /  15 Page

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    K4S560832C K4S560832C-TC_L1H K4S560832C-TC_L1L K4S560832C-TC_L75 K4S560832C-TC_L7C K4S560832C-TC/L1H K4S560832C-TC/L1L K

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S560832C K4S560832C-TC_L1H K4S560832C-TC_L1L K4S560832C-TC_L75 K4S560832C-TC_L7C K4S560832C-TC/L1H K4S560832C-TC/L1L K4S560832C-TC/L75 K4S560832C-TC/L7C K4S560832C-TC750
OCR Text ...t. 2001 K4S560832C Revision history Revision 0.0 (Mar. 06, 2001) Revision 0.1 (Sep. 06, 2001) * * CMOS SDRAM Redefined IDD1 & IDD4 in DC Characteristics Changed the Notes in Operating AC Parameter. < Before > 5. For 1H/1L, tRDL=1...
Description 32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL

File Size 111.63K  /  11 Page

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    K4S560832D K4S560832D-TC_L1H K4S560832D-TC_L1L K4S560832D-TC_L75 K4S560832D-TC_L7C K4S560832D-TC/L1H K4S560832D-TC/L1L K

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4S560832D K4S560832D-TC_L1H K4S560832D-TC_L1L K4S560832D-TC_L75 K4S560832D-TC_L7C K4S560832D-TC/L1H K4S560832D-TC/L1L K4S560832D-TC/L75 K4S560832D-TC/L7C
OCR Text ...y. 2003 K4S560832D Revision history Revision 0.0 (Jan. , 2002) - First release CMOS SDRAM Revision 0.1(May., 2003) - ICC6 of Low power is changed from 1.0 to 1.5 due to typo. Rev. 1.1 May. 2003 K4S560832D 8M x 8Bit x 4 Ba...
Description 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL

File Size 116.54K  /  11 Page

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    K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 K4S560432E-NC K4S560432E-NCL75 K4S561632E-NC75

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 K4S560432E-NC K4S560432E-NCL75 K4S561632E-NC75
OCR Text ...b E-die (x4, x8, x16) Revision history Revision 1.0 (August. 2003) - First release. CMOS SDRAM Rev. 1.0 August, 2003 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM 16M x 4Bit x 4 Banks / 8M x 8Bit x 4 Banks / 4M x 16Bit x 4 Ban...
Description 16M x 16 SDRAM, LVTTL, 133MHz
256Mb E-die SDRAM Specification 54pin sTSOP-II

File Size 205.22K  /  14 Page

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    K4S560832E-TC75 K4S560832E-TL75 K4S561632E K4S561632E-TC60 K4S561632E-TC75 K4S561632E-TL60 K4S561632E-TL75 K4S560432E-TL

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4S560832E-TC75 K4S560832E-TL75 K4S561632E K4S561632E-TC60 K4S561632E-TC75 K4S561632E-TL60 K4S561632E-TL75 K4S560432E-TL75 K4S560432E-TC75 K4S560432E-TC
OCR Text ...b E-die (x4, x8, x16) Revision history Revision 1.0 (May. 2003) - First release. Revision 1.1 (June. 2003) - Correct Typo Revision 1.2 (June. 2003) - Added 166MHz speed bin in x16 Revision 1.3 (September. 2003) - Corrected typo in orderin...
Description 256Mb E-die SDRAM Specification 54pin sTSOP-II

File Size 196.59K  /  14 Page

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    K4S640832C K4S640832C-TC_L1L K4S640832C-TC_L70 K4S640832C-TC_L80 K4S640832C-TC_L1H K4S640832C-TC_L10 K4S640832C-TC/L10 K

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S640832C K4S640832C-TC_L1L K4S640832C-TC_L70 K4S640832C-TC_L80 K4S640832C-TC_L1H K4S640832C-TC_L10 K4S640832C-TC/L10 K4S640832C-TC/L1H K4S640832C-TC/L1L K4S640832C-TC/L70 K4S640832C-TC/L80
OCR Text ...ct.1999 K4S640832C Revision history Revision 0.1 (Oct. 02, 1999) * Changed misprinted speed bining from -75 to -70. CMOS SDRAM Rev.0.1 Oct.1999 K4S640832C 2M x 8Bit x 4 Banks Synchronous DRAM FEATURES * * * * JEDEC standar...
Description 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL

File Size 128.76K  /  11 Page

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    K6T0808C1D-RL55 K6T0808C1D-TP70 K6T0808C1D-TL55 K6T0808C1D-TL70 K6T0808C1D-DL55 K6T0808C1D-DL70 K6T0808C1D-GB55 K6T0808C

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6T0808C1D-RL55 K6T0808C1D-TP70 K6T0808C1D-TL55 K6T0808C1D-TL70 K6T0808C1D-DL55 K6T0808C1D-DL70 K6T0808C1D-GB55 K6T0808C1D-GF70 K6T0808C1D-F K6T0808C1D-GB70 K6T0808C1D-GL55 K6T0808C1D-GL70 K6T0808C1D-GP70 K6T0808C1D-L K6T0808C1D-P K6T0808C1D-RB55 K6T0808C1D-RB70 K6T0808C1D-RF70 K6T0808C1D-RL70 K6T0808C1D-RP70 K6T0808C1D-TB55 K6T0808C1D-TB70 K6T0808C1D-TF70 K6T0808C1D-B K6T0808C1D-DB55 K6T0808C1D-DB70
OCR Text history Revision No history 0.0 0.1 Initial draft First revision - KM62256DL/DLI ISB1 = 100 50A KM62256DL-L ISB1 = 20 10A KM62256DLI-L ISB1 = 50 15A - CIN = 6 8pF, CIO = 8 10pF - KM62256D-4/5/7 Family tOH = 5 10ns - KM62256DL/DLI ID...
Description 32K X 8 STANDARD SRAM, 70 ns, PDSO28
32Kx8 bit Low Power CMOS Static RAM 32Kx8位低功耗CMOS静态RAM
D2 - GLENAIR 32Kx8位低功耗CMOS静态RAM

File Size 169.00K  /  9 Page

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    K7A803600B-QC14 K7A803600B-QC16 K7A803609B K7A803609B-QC25 K7A801800 K7A801800B-QC14 K7A801800B-QC16 K7B803625 K7B803625

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K7A803600B-QC14 K7A803600B-QC16 K7A803609B K7A803609B-QC25 K7A801800 K7A801800B-QC14 K7A801800B-QC16 K7B803625 K7B803625B-QC65 K7B803625B-QC75 K7A801809B-QC25 K7A801809B K7B801825B-QC65 K7A801809B-QCI25 K7B801825B-QC75 K7D801871B-HC25
OCR Text ...ipelined Burst SRAM Revision history Rev. No. 0.0 0.1 0.2 0.3 1.0 history Initial draft 1. Delete pass- through 1. Add x32 org part and industrial temperature part 1. change scan order(1) form 4T to 6T at 119BGA(x18) 1. Final spec relea...
Description 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM 256Kx36
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
256Kx36 & 512Kx18 SRAM

File Size 397.77K  /  18 Page

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    K7A803601M K7A801801M K7A801809B K7A803609B

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K7A803601M K7A801801M K7A801809B K7A803609B
OCR Text ...ipelined Burst SRAM Revision history Rev. No. 0.0 0.1 history Initial draft Modify DC characteristics( Input Leakage Current test Conditions) form VDD=VSS to VDD to Max. Remove 119BGA Package Type. Change DC Characteristics. ISB value f...
Description 256Kx36 & 512Kx18 Synchronous SRAM
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
256K x 36 & 512K x 18-Bit Synchronous Pipelined Burst SRAM Data Sheet

File Size 465.04K  /  17 Page

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For history Found Datasheets File :: 39254    Search Time::2.281ms    
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