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Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
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Part No. |
5FL2C48A U5FL2C48A 5DL2C48A U5DL2C48A
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Description |
Switching power Supply Application high Efficiency Diode(用于开关型电源的高效二极管) high EFFICIENCY DIODE (SWITCHING type power SUPPLY/ CONVERTER & CHOPPER APPLICATIONS) high EFFICIENCY DIODE (SWITCHING type power SUPPLY CONVERTER & CHOPPER APPLICATIONS) high EFFICIENCY DIODE (SWITCHING type power SUPPLY, CONVERTER & CHOPPER APPLICATIONS)
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File Size |
213.21K /
4 Page |
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it Online |
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TOSHIBA[Toshiba Semiconductor]
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Part No. |
2SK1365
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Description |
FET, Silicon N Channel MOS type(for high Speed, high Current Switching, Switching power Supply)
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File Size |
439.88K /
6 Page |
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it Online |
Download Datasheet
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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Part No. |
CM1200HC-66H
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Description |
high power SWITCHING USE INSULATED type high Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
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File Size |
52.44K /
4 Page |
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it Online |
Download Datasheet
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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Part No. |
CM400HA-28H
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Description |
high Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules high power SWITCHING USE INSULATED type
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File Size |
46.56K /
4 Page |
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it Online |
Download Datasheet
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Vishay
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Part No. |
G
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Description |
Military, MIL-R-26 Qualified, type RW, Precision power, Silicone Coated, Complete Welded Construction, high Temperature Silicone Coated and Molded, Available in Non-Inductive Styles (type GN)
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File Size |
155.51K /
2 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation powerex, Inc.
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Part No. |
CM600HA-28H
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Description |
high Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules high power SWITCHING USE INSULATED type 大功率开关使用绝缘型
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File Size |
48.90K /
4 Page |
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it Online |
Download Datasheet
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Price and Availability
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