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  hexfets Datasheet PDF File

For hexfets Found Datasheets File :: 1108    Search Time::2.578ms    
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    IRF7343

IRF[International Rectifier]
Part No. IRF7343
OCR Text ... Description Fifth Generation hexfets from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device ...
Description HEXFET Power MOSFET

File Size 139.92K  /  10 Page

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    IRFBF20L IRFBF20S IRFBF20STRL IRFBF20STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFBF20L IRFBF20S IRFBF20STRL IRFBF20STRR
OCR Text ... Description Third generation hexfets from international Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2Pak is a surface mount power pa...
Description Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A) 功率MOSFET(减振钢板基本\u003d 900V,的Rds(on)\u003d 8.0ohm,身份证\u003d 1.7A
900V Single N-Channel HEXFET Power MOSFET in a TO-262 package
900V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 307.93K  /  10 Page

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    IRFL1006

IRF[International Rectifier]
Part No. IRFL1006
OCR Text ... Description Fifth Generation hexfets from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device ...
Description Power MOSFET(Vdss=60V, Rds(on)=0.22ohm, Id=1.6A)

File Size 123.63K  /  9 Page

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    IRFPG50

International Rectifier
Part No. IRFPG50
OCR Text ...l Devices Fig 14. For N-Channel hexfets www.irf.com 7 IRFPG50 TO-247AC Package Details 1 5 .90 (.6 2 6) 1 5 .30 (.6 0 2) -B3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 0 .25 (.0 1 0) M -A5 .5 0 (.2 1 7 ) 2 0 .3 0 (.80 0 ) 1 9 .7 0 (.77 5 ) 1...
Description Power MOSFET(Vdss=1000V, Rds(on)=2.0ohm, Id=6.1A)

File Size 207.35K  /  8 Page

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    IRFR9120N IRFU9120N IRFRU9120N

IRF[International Rectifier]
Intersil Corporation
Part No. IRFR9120N IRFU9120N IRFRU9120N
OCR Text ... Description Fifth Generation hexfets from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device ...
Description Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.6A)

File Size 113.62K  /  10 Page

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    IRFZ44EL IRFZ44ES

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFZ44EL IRFZ44ES
OCR Text ... Description Fifth Generation hexfets from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device ...
Description MOV 250V RMS 17MM HIGH ENERGY 功率MOSFET(减振钢板基本\u003d 60V的,的Rds(on)\u003d 0.023ohm,身份证\u003d 48A条)
(IRFZ44ES / IRFZ44L) Power MOSFET
Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A)

File Size 159.31K  /  10 Page

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    IRFZ44E IRFZ44EPBF

IRF[International Rectifier]
Part No. IRFZ44E IRFZ44EPBF
OCR Text ... Description Fifth Generation hexfets from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device ...
Description 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A)

File Size 94.75K  /  8 Page

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    IRFZ44L IRFZ44S IRFZ44STRL IRFZ44STRR

IRF[International Rectifier]
Part No. IRFZ44L IRFZ44S IRFZ44STRL IRFZ44STRR
OCR Text ... Description Third Generation hexfets from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device ...
Description 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
(IRFZ44L / IRFZ44S) HEXFET Power MOSFET

File Size 320.84K  /  10 Page

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    IRFZ44NL IRFZ44NS IRFZ44NSTRR IRFZ44NLPBF IRFZ44NSPBF IRFZ44NSTRL

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRFZ44NL IRFZ44NS IRFZ44NSTRR IRFZ44NLPBF IRFZ44NSPBF IRFZ44NSTRL
OCR Text ...l Devices Fig 14. For N-Channel hexfets www.irf.com 7 IRFZ44NS/IRFZ44NL D2Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) M AX. -A2 4.69 (.1 85) 4.20 (.1 65) -B 1.3 2 (.05 2) 1.2 2 (.04 8) 1 0.16 (.4 00...
Description 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A)
(IRFZ44NL / IRFZ44NS) Power MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 49A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 55V的五(巴西)直| 49A条(丁)|63AB

File Size 150.74K  /  10 Page

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    IRFZ44R

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFZ44R
OCR Text ...l Devices Fig 14. For N-Channel hexfets www.irf.com 7 IRFZ44R Package Outline TO-220AB Outline Dimensions are shown in millimeters (inches) 2.87 (.11 3) 2.62 (.10 3) 10.54 (.415) 10.29 (.405) 3.7 8 (.149 ) 3.5 4 (.139 ) -A 6.47 (.255...
Description Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=50*A) 功率MOSFET(减振钢板基本\u003d 60V的,的Rds(on)\u003d 0.028ohm,身份证\u003d 50 *甲)
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 152.09K  /  8 Page

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For hexfets Found Datasheets File :: 1108    Search Time::2.578ms    
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