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| Part No. |
KFG1216U2M-DIB00 KFG1216D2M-DCB00
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| OCR Text |
... -. write protection -. burst read latency -. dual operation -. invalid block definition and identification method -. er...page to 2 times per sector 10. revised write protection status description 11. added ddp selection ... |
| Description |
32M X 16 FLASH 2.7V PROM, 76 ns, PBGA63
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| File Size |
312.47K /
76 Page |
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Cypress Semiconductor, Corp.
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| Part No. |
CY7C0430BV CY7C04312BV-100BGC
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| OCR Text |
... = 4.2 ns. each port contains a burst counter on the input address register. after externally loading the counter with the initial address t...page 3 of 37 applications. a port ? s burst counter is loaded with an external address when the port... |
| Description |
10 Gb/s 3.3V QuadPort DSE Family 32K X 18 FOUR-PORT SRAM, 5 ns, PBGA272
QuadPort DSE 1Mb Memory
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| File Size |
832.11K /
37 Page |
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Winbond Electronics
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| Part No. |
W986416DH
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| OCR Text |
...de. accesses to the sdram are burst oriented. consecutive memory location in one page can be accessed at a bu rst length of 1, 2, 4, 8 or full page when a bank and row is selected by an active command. column addresses are automatically... |
| Description |
SDRAM 4Mx16
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| File Size |
1,591.59K /
46 Page |
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it Online |
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Cypress Semiconductor, Corp.
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| Part No. |
CY7C1514KV18 CY7C1514KV18-300BZXC CY7C1512KV18-300BZXC CY7C1512KV18-300BZC CY7C1514KV18-300BZC CY7C1514KV18-250BZC CY7C1514KV18-250BZI CY7C1514KV18-250BZXC CY7C1514KV18-333BZC CY7C1514KV18-333BZI CY7C1514KV18-333BZXC CY7C1514KV18-333BZXI CY7C1514KV18-250BZXI CY7C1525KV18 CY7C1512KV18-350BZC
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| OCR Text |
burst architecture cy7c1510kv18, cy7c1525kv18 cy7c1512kv18, cy7c1514kv18 cypress semiconductor corporation ? 198 champion court ? san jose ,...page 2 of 33 logic block diagram (cy7c1510kv18) logic block diagram (cy7c1525kv18) 4m x 8 array clk ... |
| Description |
72-Mbit QDR II SRAM 2-Word burst Architecture Two-word burst on all accesses
72-Mbit QDR(TM)-II SRAM 2-Word burst Architecture; Architecture: QDR-II, 2 Word burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 QDR SRAM, 0.45 ns, PBGA165
72-Mbit QDR(TM)-II SRAM 2-Word burst Architecture; Architecture: QDR-II, 2 Word burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.45 ns, PBGA165
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| File Size |
603.26K /
33 Page |
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it Online |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KBE00S003M
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| OCR Text |
...cas latency (1, 2 & 3). -. burst length (1, 2, 4, 8 & full page). -. burst type (sequential & interleave). ? emrs cycle with address key programs. ? all inputs are sampled at the positive going edge of the system clock. ? ... |
| Description |
1Gb NAND*2 256Mb Mobile SDRAM*2
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| File Size |
1,819.19K /
86 Page |
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Winbond Electronics
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| Part No. |
W986408CH
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| OCR Text |
...resh cas latency: 2 and 3 burst length: 1, 2, 4, 8 , and full page burst read, single writes mode byte data controlled by dqm power-down mode auto-precharge and controlled precharge 4k refresh cycles / 64ms interface... |
| Description |
2M x 8 bit x 4 Banks SDRAM
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| File Size |
2,183.03K /
44 Page |
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Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
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| Part No. |
CYWUSB6935-48LFXC CYWUSB6935-48LFXI
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| OCR Text |
... the end of each data byte in a burst access, oth- erwise the same address is accessed. ? six bits of address. ? eight bits of data. the spi...page 4 of 33 byte 1 byte 1+n bit # 7 6 [5:0] [7:0] bit name dir inc address data figure 5-1. spi ... |
| Description |
WirelessUSB LRTM 2.4-GHz DSSS Radio SoC SPECIALTY TELECOM CIRCUIT, QCC48
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| File Size |
367.11K /
33 Page |
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it Online |
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天津新技术产业园区管理委员会
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| Part No. |
IS42S32800B-7T IS42S32800B-7TI-TR
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| OCR Text |
...mable mode -cas#latency:2 or 3 -burst length:1,2,4,8,or full page -burst type:interleaved or linear burst -burst-read-single-write burst stop function individual byte controlled by dqm0-3 auto refresh and self refresh 4096 refresh cycle... |
| Description |
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| File Size |
1,107.94K /
62 Page |
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it Online |
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