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52203 68HC711 HC21F MC5832 S10C60D MG400 FJL6820 0603X
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  8.7nc Datasheet PDF File

For 8.7nc Found Datasheets File :: 190    Search Time::1.672ms    
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    USBULC1606-4M8

STMicroelectronics
Part No. USBULC1606-4M8
OCR Text ... and id lines protection with 6.8 v low voltage diodes (lv) v bus line protection with 14.6 v high voltage diodes (hv) ultra low capaci...7nc 8nc ep gnd exposed pad ch1 pin 5 v cc 6.8v 14.6v ep pin 4 v p (internal) ch2 ch3 pin 1 pin 2 pin...
Description Ultra low capacitance ESD protection for enhanced mini USB interface

File Size 399.85K  /  15 Page

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    CYPRESS SEMICONDUCTOR CORP
Part No. MT55L128V36P1T-6IT
OCR Text ... u t p u t b u f f e r s 128k x 8 x 4 (x32) 128k x 9 x 4 (x36) memory array e e input register 0 address register 0 write address register 1...7nc dqc dqc 8 dqb dqc dqc 9 dqb dqc dqc 10 v ss 11 v dd q 12 dqb dqc dqc 13 dqb dqc dqc 14 v dd 15 v...
Description 128K X 36 ZBT SRAM, 3.5 ns, PQFP100

File Size 495.36K  /  31 Page

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Part No. MT58L128L36D1T-6IT MT58L128L32D1F-10IT
OCR Text ...put registers sense amps 128k x 8 x 4 (x32) 128k x 9 x 4 (x36) memory array output buffers e byte ? a ? write driver byte ? b ? write driv...7nc dqc 8 dqb dqc 9 dqb dqc 10 v ss 11 v dd q 12 dqb dqc 13 dqb dqc 14 v dd 15 v dd 16 nc 17 v ss 18...
Description 128K X 36 CACHE SRAM, 3.5 ns, PQFP100
128K X 32 STANDARD SRAM, 5 ns, PBGA165

File Size 586.16K  /  31 Page

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    CYPRESS SEMICONDUCTOR CORP
Part No. MT58L256V18F1B-10
OCR Text ...cle/mhz) 6.8ns/7.5ns/133 mhz -6.8 7.5ns/8.8ns/113 mhz -7.5 8.5ns/10ns/100 mhz -8.5 10ns/15ns/66 mhz -10  configurations 3.3v i/o 256k x 18 ...7nc dqc 8 dqb dqc 9 dqb dqc 10 v ss 11 v dd q 12 dqb dqc 13 dqb dqc 14 v ss 15 v dd 16 nc 17 v ss 18...
Description 256K X 18 STANDARD SRAM, 10 ns, PBGA119

File Size 342.19K  /  31 Page

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    BSS138BKS-15

NXP Semiconductors
Part No. BSS138BKS-15
OCR Text ...0ma; v gs =0v; t j = 25 c 0.7 0.8 1.2 v bss138bks all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2011. all rights reserved. product data sheet rev. 1 ? 12 august 2011 8 of 17 nxp semiconductors bss13...
Description 60 V, 320 mA dual N-channel Trench MOSFET

File Size 855.93K  /  17 Page

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    SMN0250F

KODENSHI KOREA CORP.
Part No. SMN0250F
OCR Text 8 smn0250f advanced n-ch power mosfet switching regulator application features ? drain-source breakdown voltage: bv dss =500v (min.) ? low gate charge: q g =7nc (typ.) ? low drain-source on resistance: r ds(on) =3.4 ?...
Description SWITCHING REGULATOR APPLICATION

File Size 346.77K  /  8 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AO4703
OCR Text ...g s s a d/k d/k d/k d/k 1 2 3 4 8 7 6 5 soic-8 p-channel enhancement mode field effect transistor with schottky diode general description ww...7nc q gd 10.4 nc t d(on) 12.4 ns t r 8.2 ns t d(off) 25.6 ns t f 12 ns t rr 33 ns q rr 23 nc schottk...
Description P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

File Size 425.20K  /  5 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AO4705
OCR Text ... max c/w c/w mosfet -30 25 -10 -8 -60 3 i f 30 thermal characteristics schottky 40 30 28 54 continuous drain current a gate-source voltage ...7nc q gd 10.4 nc t d(on) 12.4 ns t r 8.2 ns t d(off) 25.6 ns t f 12 ns t rr 33 ns q rr 23 nc schottk...
Description P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

File Size 265.08K  /  5 Page

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