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Infineon Technologies AG Infineon Technologies A...
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Part No. |
IPL60R360P6S
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OCR Text |
...v dd =400v, v gs =13v, i d =5.6a, r g =3.4 w rise time t r - 7 - ns v dd =400v, v gs =13v, i d =5.6a, r g =3.4 w turn-off delay time t d(off) - 33 - ns v dd =400v, v gs =13v, i d =5.6a, r g =3.4 w fall time t f - 7 - ns v dd =400v, v... |
Description |
IGBT Modules Very high commutation ruggedness
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File Size |
1,345.05K /
14 Page |
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Advanced Power Electronics
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Part No. |
AP9585H
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OCR Text |
...GS=-10V, Id=-10A VGS=-4.5V, Id=-6a
VGS(th) gfs IdSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward...d = -10 A V G = - 10V
1.8
1.6
RdS(ON\) (m )
145
1.4
1.2
140
1.0
135
0.... |
Description |
P-CHANNEL ENHANCEMENT MOdE POWER MOSFET
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File Size |
102.78K /
4 Page |
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TY Semiconductor Co., Ltd
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Part No. |
CJL8820
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OCR Text |
... 21 m ? v gs =4.5v, i d =6.6a 24 m ? v gs =3.8v, i d =6a 28 m ? v gs =2.5v, i d =5.5a 32 m ? v gs =1.8v, i d =2a 50 m ? forward tranconductance (note 1) g fs v ds =5v, i d =7a 9 s diod... |
Description |
SOT-23-6L Plastic-Encapsulate MOSFETS
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File Size |
972.51K /
3 Page |
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IRF[International Rectifier]
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Part No. |
IRF7307 IRF7307TR
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OCR Text |
...C, Id = -1mA VGS = 4.5V, Id = 2.6a VGS = 2.7V, Id = 2.2A VGS = -4.5V, I d = -2.2A VGS = -2.7V, I d = -1.8A VdS = VGS, Id = 250A VdS = VGS, Id = -250A VdS = 15V, Id = 2.6a VdS = -15V, Id = -2.2A VdS = 16V, V GS = 0V VdS = -16V, VGS = 0... |
Description |
20V dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
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File Size |
190.19K /
10 Page |
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