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Matsshita / Panasonic
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| Part No. |
2SC3354 2SC3354S
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| OCR Text |
...ximum Ratings
(Ta=25C)
15.60.5
Optimum for high-density mounting. Allowing supply with the radial taping. High transition frequency fT.
1
Transistor
PC -- Ta
500 60 Ta=25C 50 50
2SC3354
IC -- VCE
60 25C VCE=10V
IC -... |
| Description |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 50MA I(C) | SIP
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| File Size |
54.98K /
4 Page |
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PANASONIC[Panasonic Semiconductor]
PANASONIC CORP
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| Part No. |
2SB941 2SB941A 2SD1266A 2SB0941 2SD1266 2SB941APQ 2SB941PQ 2SB0941A
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| OCR Text |
...C Tj Tstg
(TC=25C)
Ratings -60 -80 -60 -80 -5 -5 -3 35 2 150 -55 to +150 Unit V
emitter voltage 2SB941A Emitter to base voltage Peak ...fT ton tstg tf IC = -1A, IB1 = - 0.1A, IB2 = 0.1A Conditions VCE = -60V, VBE = 0 VCE = -80V, VBE = 0... |
| Description |
Silicon PNP epitaxial planar type power transistor
Silicon PNP epitaxial planar type(For low-frequency power amplification)
3 A, 80 V, PNP, Si, POWER TRANSISTOR
3 A, 60 V, PNP, Si, POWER TRANSISTOR
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| File Size |
46.06K /
2 Page |
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it Online |
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SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
http://
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| Part No. |
Q62702-F1063 BFT93
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| OCR Text |
... typ. max. Unit
V(BR)CEO
12 60 -
V nA 50 A 10 20 -
IC = 1 mA, IB = 0
Collector-base cutoff current
ICBO IEBO hFE
VCB = 5 V,...fT
4 5.5 0.8 0.28 1.6 -
GHz pF 1.3 dB 2.7 4.6 -
IC = 30 mA, VCE = 8 V, f = 500 MHz
Collector... |
| Description |
PNP Silicon RF Transistor for broadba...
PNP Silicon RF Transistor (For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA) UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-236
From old datasheet system
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| File Size |
58.83K /
7 Page |
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it Online |
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Renesas
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| Part No. |
2SC5998
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| OCR Text |
...rrent Ic op(A)
Ic op
100 80 60 40 20 0
PAE(%)
0.5 0.4 0.3
100
Ic op
80
PAE(%)
PAE
0.3 0.2 0.1 0 0 5 10 15 20 25 30 Pin (dBm)
60
PAE
0.2 0.1 0 0 5 10 15 20 25 30 Pin (dBm) 40 20 0
Harmonic Distortion
40 30 20 V... |
| Description |
Transistors>Amplifiers/Bipolar
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| File Size |
99.19K /
12 Page |
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it Online |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
2SD1485
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| OCR Text |
...(TC=25C)
Ratings 100 100 5 8 5 60 3 150 -55 to +155 Unit V V V A A W C C
0.7
s Features
15.00.3 11.00.2
5.00.2 3.2
21.00.5 1...fT Cob Conditions VCB = 100V, IE = 0 VEB = 3V, IC = 0 VCE = 5V, IC = 20mA VCE = 5V, IC = 1A VCE = 5V... |
| Description |
Silicon NPN triple diffusion planar type(For high power amplification)
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| File Size |
43.02K /
2 Page |
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it Online |
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Panasonic
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| Part No. |
2SD1751
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| OCR Text |
...ic equipment. (TC=25C)
Ratings 60 60 6 4 2 15 1.3 150 -55 to +150 Unit V
1.00.2
0.750.1
2.30.2 4.60.4 1 2 3
s Absolute Maximum ...fT ton tstg tf IC = 1A, IB1 = 0.1A, IB2 = - 0.1A Conditions VCE = 60V, VBE = 0 VCE = 30V, IB = 0 VEB... |
| Description |
Silicon NPN triple diffusion planar type(For power amplification)
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| File Size |
53.28K /
3 Page |
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it Online |
Download Datasheet |
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Price and Availability
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