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IR
International Rectifier
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| Part No. |
IRFB20N50K IRFB20N50KPBF
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| OCR Text |
...x. Units Conditions --- S VDS = 50v, ID = 12a 110 ID = 20A 33 nC VDS = 400V 54 VGS = 10V, See Fig. 6 and 13 --- VDD = 250v --- ID = 20A ns --- RG = 7.5 --- VGS = 10V,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- ... |
| Description |
20 A, 500 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
SMPS MOSFET
HEXFET? Power MOSFET
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
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| File Size |
113.37K /
8 Page |
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it Online |
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Advanced Power Electronics ...
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| Part No. |
AP30T10GS-HF
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| OCR Text |
... d(on) turn-on delay time v ds =50v - 6.5 - ns t r rise time i d =12a - 18 - ns t d(off) turn-off delay time r g =1 -20- ns t f fall time v gs =10v - 5 - ns c iss input capacitance v gs =0v - 840 1340 pf c oss output capacitance v ds =25v ... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
56.60K /
4 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
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| Part No. |
FQA12N60
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| OCR Text |
...e 2. L = 10mH, IAS = 12a, VDD = 50v, RG = 25 , Starting TJ = 25C 3. ISD 12a, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature
(c)2000 Fair... |
| Description |
600V N-Channel MOSFET
600V N-Channel MOSFET 12 A, 600 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
534.02K /
8 Page |
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it Online |
Download Datasheet |
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JILIN SINO-MICROELECTRONICS CO., LTD.
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| Part No. |
JCS12N60FT-O-F-N-B JCS12N60CT-O-C-N-B JCS12N60T
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| OCR Text |
...erature 2L=11.2mH, IAS=12a, VDD=50v, RG=25 ,Starting TJ=25 3ISD 12a,di/dt 300A/s,VDDBVDSS, Starting TJ=25 4Pulse TestPulse Width 300s,Duty Cycle2 5Essentially independent of operating temperature
Max JCS12N60FT 2.45 62.5
Para... |
| Description |
N-CHANNEL MOSFET
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| File Size |
1,123.07K /
10 Page |
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it Online |
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Advanced Power Electronics ...
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| Part No. |
AP30T10GI-HF-14
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| OCR Text |
...(on) turn-on delay time 2 v ds =50v - 6.5 - ns t r rise time i d =12a - 18 - ns t d(off) turn-off delay time r g =1 -20- ns t f fall time v gs =10v - 5 - ns c iss input capacitance v gs =0v - 840 1340 pf c oss output capacitance v ds =25v ... |
| Description |
Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
55.31K /
4 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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