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				International Rectifier
Part No.	IRFS3107PBF IRFSL3107PBF
OCR Text	... 600 400 200 0 3.0 ID 21A 49A BOTTOM 140A TOP Energy (J) 2.0 1.0 0.0 0 20 40 60 80 25 50 75 100 125 150 175 VDS, Drain-to-Source Voltage (V) Starting TJ, Junction Temperature (C) Fig 11. Typi...
Description	HEXFET Power MOSFET
File Size	371.07K / 10 Page	View it Online	Download Datasheet

				Wuxi NCE Power Semiconductor Co., Ltd
Part No.	NCE5549
OCR Text	...GENERAL FEATURES VDS =55V,ID =49A RDS(ON) < 15m @ VGS=10V (Typ:8.4m) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good...
Description	NCE N-Channel Enhancement Mode Power MOSFET
File Size	325.01K / 7 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDMS8662
OCR Text	...el powertrench ? mosfet 30v, 49a, 2.0m ? features
Description	N-Channel PowerTrench MOSFET
File Size	267.55K / 7 Page	View it Online	Download Datasheet

				Transcom, Inc.
Part No.	TA060-180-28-20
OCR Text	...Gain: 28 dB * Bias Condition: 0.49A @ 12V ELECTRICAL SPECIFICATIONS at 25 C Symbol FREQ SSG GOF NF P1 dB Pin VSWR, IN VSWR, OUT VDC IDC OTR Frequency Range Small Signal Gain Small Signal Gain Flatness Noise Figure Output Power at 1 dB ...
Description	6 - 18GHz 20 dBm Amplifier
File Size	13.55K / 1 Page	View it Online	Download Datasheet

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