4.900v pdf Datasheet P13 Full Text Search --- IC-ON-LINE


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4.900v Datasheet PDF File

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				Eupec
Part No.	BSM300GB120DLC
OCR Text	... = 25C VGE(th) VCE sat min. 4,5 typ. 2,1 2,4 5,5 max. 2,6 2,9 6,5 V V V VGE = -15V...+15V QG - 3,2 - C f = ...900V, V CEmax=VCES -LCE *di/dt Anschlusse / terminals 2-3 ISC LCE 1800 25 A nH Eoff 36 mJ Eon 35 mJ ...
Description	TRANSISTOR,IGBT POWER MODULE,INDEPENDENT,1.2KV V(BR)CES,625A I(C)
File Size	172.18K / 9 Page	View it Online	Download Datasheet

				Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
Part No.	FQA9N90
OCR Text	...e 1) FQA9N90 900 8.6 5.45 34.4 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/C C C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/...
Description	900V N-Channel MOSFET 8.6 A, 900 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	677.85K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor Corporation
Part No.	SSH6N90A
OCR Text	...2.0 -----------------1.10 ------4.28 --3.5 100 -100 25 250 2.3 -A pF V V nA Test Condition VGS=0V,ID=250A See Fig 7 VDS=5V,ID=250A VGS=30V VGS=-30V VDS=900V VDS=720V,TC=125 C VGS=10V,ID=3A VDS=50V,ID=3A 4 O* 4 O V/ C ID=250A 156...
Description	Advanced Power MOSFET
File Size	259.64K / 7 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SC3973 2SC3973A
OCR Text	...Unit: mm 10.00.2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1 1.30.2 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 3 4.20.2 s Features q q q q q H...900V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.1A VCE = 5V, IC = 4A IC = 4A, IB = ...
Description	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
File Size	58.68K / 3 Page	View it Online	Download Datasheet

				SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No.	2SK2674
OCR Text	... 10 8 100C 150C 6 4 2 VDS = 25V TYP 0 5 10 15 20 0 Gate-Source Voltage VGS [V] 2SK2674 100 Static Drain-Source On-state Resistance Static Drain-Source On-state Resistance RDS(ON) [] 10 ID = 3.5A 1 ...
Description	HVX-2 Series Power MOSFET(900V 7A)
File Size	418.26K / 12 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	SSP6N90A
OCR Text	...2.0 -----------------1.10 ------4.28 --3.5 100 -100 25 250 2.3 -A pF V V nA Test Condition VGS=0V,ID=250A See Fig 7 VDS=5V,ID=250A VGS=30V VGS=-30V VDS=900V VDS=720V,TC=125 C VGS=10V,ID=3A VDS=50V,ID=3A 4 O* 4 O V/ C ID=250A 156...
Description	Advanced Power MOSFET
File Size	257.16K / 7 Page	View it Online	Download Datasheet

				Siemens Semiconductor Group
Part No.	BSM300GAL120DLC
OCR Text	... = 25C VGE(th) VCE sat min. 4,5 typ. 2,1 2,4 5,5 max. 2,6 2,9 6,5 V V V VGE = -15V...+15V QG - 3,2 - C f = ...900V, VCEmax=VCES -LsCE *dI/dt ISC LsCE 1800 25 A nH Eoff 36 mWs Eon 35 mWs tf 0,04 0,05 s s td,off ...
Description	IGBT-Module
File Size	86.90K / 9 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation POWEREX[Powerex Power Semiconductors]
Part No.	FS5KM-18A
OCR Text	....15 2.54 0.25 2.54 0.25 4.5 0.2 q GATE w DRAIN e SOURCE 123 2.6 0.2 w VDSS ................................................................................ 900V rDS (ON) (MAX) ................................................
Description	MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
File Size	49.53K / 4 Page	View it Online	Download Datasheet

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