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Pletronics
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| Part No. |
SW11B
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| OCR Text |
... aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 a b c day 1 2 3 4 5 6 7 8 9 10 11 12 code d e f g h j k l m n p r day 13 14 15 16 17 18 19 20 21...ohm nominal load and no capacitance) www.datasheet.in
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| Description |
Sine Wave Oscillators
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| File Size |
218.28K /
7 Page |
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TY Semiconductor Co., Ltd
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| Part No. |
STS6601
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| OCR Text |
4.5v g d s 110 @ vgs=-10v s ot 26 t op v iew d g d d s 1 2 3 6 5 4 d features super high dense cell design for low r ds(on) . rugged and rel...ohm total gate charge rise time turn-off delay time v ds =-30v,i d =-3.2a,v gs =-10v fall time turn-... |
| Description |
Super high dense cell design for low RDS
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| File Size |
80.63K /
2 Page |
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Electrochem
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| Part No. |
3B880
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| OCR Text |
4 18 0 3 5 6 17 0 3 3 8 16 0 3 2 0 15 0 3 0 2 14 0 2 8 4 13 0 2 6 6 12 0 2 4 8 11 0 2 3 0 10 0 2 1 2 ...ohm 3.4k ohm 1.0k ohm http://
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| Description |
Low Rate Lithium Cell
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| File Size |
125.12K /
1 Page |
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SamHop Microelectronics...
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| Part No. |
STP06N20 STF06N20
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| OCR Text |
...06n20 green product 1.3 @ vgs=4.5v 5a
www.samhop.com.tw oct,28,2013 2 ver 1.0 4 symbol min typ max units bv dss 200 v 1 i gss 100 na v g...ohm total gate charge rise time turn-off delay time v ds =100v,i d =1a,v gs =10v fall time turn-on d... |
| Description |
Super high dense cell design for low RDS(ON). N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
205.36K /
11 Page |
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SamHop Microelectronics
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| Part No. |
STS8216
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| OCR Text |
...x 20v 6a 27 @ vgs=2.5v 20 @ vgs=4.0v features super high dense cell design for low r ds(on) . rugged and reliable. suface mount package. abs...ohm v gs =4.0v , i d =6a r ds(on) drain-source on-state resistance i dss ua gate threshold voltage v... |
| Description |
Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
181.58K /
7 Page |
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it Online |
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SamHop Microelectronics...
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| Part No. |
STS8213
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| OCR Text |
... d1/d2 s2 g1 d1/d2 g2 1 2 3 6 5 4 22.0 @ vgs=2.5v 16.0 @ vgs=4.0v 16.5 @ vgs=3.7v
electrical characteristics ( t a =25 c...ohm total gate charge rise time turn-off delay time fall time turn-on delay time v ds =5v , i d =3.5... |
| Description |
Super high dense cell design for low RDS(ON). Dual N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
108.35K /
7 Page |
View
it Online |
Download Datasheet
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Price and Availability
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