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  30v s Datasheet PDF File

For 30v s Found Datasheets File :: 28086    Search Time::1.188ms    
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    FAIRCHILD[Fairchild Semiconductor]
Part No. HUFA76409P3
OCR Text ...= 0V to 5V VGs = 0V to 1V VDD = 30v, ID = 8A, Ig(REF) = 1.0mA (Figures 14, 19, 20) VDD = 30v, ID = 18A VGs = 10V, RGs = 24 (Figures 16, 21, ...s IsD = 8A, dIsD/dt = 100A/s TEsT CONDITIONs MIN TYP MAX 1.25 1.0 66 166 UNITs V V ns nC (c)2001 ...
Description 17A, 60V, 0.070 Ohm, N-Channel, Logic Level UltraFETPower MOsFET
17A, 60V, 0.070 Ohm, N-Channel, Logic Level UltraFET Power MOsFET
17A/ 60V/ 0.070 Ohm/ N-Channel/ Logic Level UltraFET Power MOsFET

File Size 205.02K  /  10 Page

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    2SJ400

SANYO[Sanyo Semicon Device]
Part No. 2sJ400
OCR Text ...-1mA, VGs=0 IG=100A, VDs=0 VDs=-30v, VGs=0 VGs=16V, VDs=0 VDs=-10V, ID=-1mA VDs=-10V, ID=-18A ID=-18A, VGs=-10V ID=-18A, VGs=-4V VDs=-10V, f...s m m pF pF pF ns ns ns ns V switching Time Test Circuit VDD=--30v Vin 0V --10V Vin PW=10s D.C.1...
Description P-Channel silicon MOsFET Ultrahigh-speed switching Applications

File Size 41.78K  /  4 Page

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    Intersil, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HUFA76432s3s HUFA76432P3 HUFA76432s3sT
OCR Text ...= 0V to 5V VGs = 0V to 1V VDD = 30v, ID = 39A, Ig(REF) = 1.0mA (Figures 14, 19, 20) VDD = 30v, ID = 60A VGs = 10V, RGs = 6.8 (Figures 16, 21...s IsD = 39A, dIsD/dt = 100A/s TEsT CONDITIONs MIN TYP MAX 1.25 1.00 65 120 UNITs V V ns nC (c)200...
Description TRANsIsTOR | MOsFET | N-CHANNEL | 60V V(BR)Dss | 55A I(D) | TO-263AB 晶体管| MOsFET的| N沟道| 60V的五(巴西)直| 55A条(丁)|63AB
55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOsFETs

File Size 213.72K  /  10 Page

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    International Rectifier, Corp.
Part No. IRF7451
OCR Text ...ard leakage CCC CCC 100 v gs = 30v gate-to-source reverse leakage CCC CCC -100 na v gs = -30v i gss i dss drain-to-source leakage current ...s duty factor 0.1 % r d v gs r g d.u.t. 10v + - v dd 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 i ...
Description Power MOsFET(Vdss=150V, Rds(on)max=0.09ohm, Id=3.6A) 功率MOsFET(减振钢板基本\u003d 150伏时,RDs(on)的最大值\u003d 0.09ohm,身份证\u003d 3.6A

File Size 208.18K  /  8 Page

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    FAIRCHILD[Fairchild Semiconductor]
Part No. HUFA76437s3s HUFA76437P3 HUFA76437s3sT
OCR Text ...= 0V to 5V VGs = 0V to 1V VDD = 30v, ID = 45A, Ig(REF) = 1.0mA (Figures 14, 19, 20) VDD = 30v, ID = 71A VGs = 10V, RGs = 5.6 (Figures 16, 21...s IsD = 45A, dIsD/dt = 100A/s TEsT CONDITIONs MIN TYP MAX 1.25 1.0 100 295 UNITs V V ns nC (c)200...
Description 64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFETPower MOsFETs
64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOsFETs

File Size 212.71K  /  10 Page

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    AX358S AX358 AX358P

AVANTICS Microelectronics
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
Part No. AX358s AX358 AX358P
OCR Text ...o Ground Test Conditions VCC=5V~30v, VICR=0V~VCC-1.5V, VO=1.4V, Rs=0 IIN(+)-IIN(-) IIN(+) or IIN(-) VCC=15V, RL=2K VCM=0V~VCC-1.5V 1KHzf20KH...s Min 25 65 65 Typ 2 35 100 85 -120 100 7 10 Max 7 30 200 VCC-2V 20 2 2 1.2 60 Unit mV nA nA V/mV dB...
Description Low Power Dual Operational Amplifiers
ER 4C 4#16 sKT PLUG 低功耗双运算放大

File Size 196.03K  /  7 Page

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    2SJ466

SANYO[Sanyo Semicon Device]
Part No. 2sJ466
OCR Text ...-1mA, VGs=0 IG=100A, VDs=0 VDs=-30v, VGs=0 VGs=16V, VDs=0 VDs=-10V, ID=-1mA VDs=-10V, ID=-18A ID=-18A, VGs=-10V ID=-18A, VGs=-4V -1.0 16 27 ...s m m Continued on next page. Any and all sANYO products described or contained herein do not ...
Description P-Channel silicon MOsFET Ultrahigh-speed switching Applications

File Size 38.71K  /  4 Page

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    IRF[International Rectifier]
Part No. IRF7451PBF IRF7451PBF-15
OCR Text ..., VGs = 0V, TJ = 150C 100 VGs = 30v nA -100 VGs = -30v Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) ...s VDs = 25V, ID = 2.2A 41 ID = 2.2A 10 nC VDs = 120V 20 VGs = 10V --- VDD = 75V --- ID = 2.2A ns --...
Description &nbsp;&nbsp;&nbsp;High frequency DC-DC converters
sMPs MOsFET

File Size 127.46K  /  8 Page

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    IRF[International Rectifier]
Part No. IRFPs3815PBF
OCR Text ..., VGs = 0V, TJ = 150C 100 VGs = 30v nA -100 VGs = -30v 390 ID = 58A 80 nC VDs = 120V 230 VGs = 10V --- VDD = 75V --- ID = 58A ns --- RG = 1....s --- VGs = 0V --- pF VDs = 25V --- = 1.0MHz, see Fig. 5 --- VGs = 0V, VDs = 1.0V, = 1.0MHz --- VG...
Description Advanced Process Technology
HEXFET Power MOsFET

File Size 128.76K  /  8 Page

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For 30v s Found Datasheets File :: 28086    Search Time::1.188ms    
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