30v 12a pdf Datasheet P13 Full Text Search --- IC-ON-LINE


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30v 12a Datasheet PDF File

For 30v 12a Found Datasheets File :: 2200 Search Time::1.391ms
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				FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
Part No.	HUF75307D3 HUF75307D3S HUF75307P3 HUF75307D3ST HUF75307D3NL
OCR Text	... 0V to 10V VGS = 0V to 2V VDD = 30v, ID 15A, RL = 2.0 Ig(REF) = 1.0mA (Figure13) 1.2 4 nC nC 16 9 0.6 20 11 0.8 nC nC nC tON td(ON) tr td(O...12a ID = 7.5A ID = 4A 6 8 10 Qg, GATE CHARGE (nC) NOTE: Refer to Fairchild Application Notes A...
Description	TRANSISTOR \| MOSFET \| N-CHANNEL \| 55V V(BR)DSS \| 15A I(D) \| TO-252AA 晶体管\| MOSFET的\| N沟道\| 55V的五（巴西）直\| 15A条（丁）\|52AA 15A, 55V, 0.090 Ohm N-Channel UltraFET Power MOSFETs 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs 15 A, 55 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 15A, 55V, 0.099 Ohm, N-Channel UltraFET Power MOSFETs 15 A, 55 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA 15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs
File Size	214.26K / 10 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	HUFA75307D3 HUFA75307D3S HUFA75307P3 HUFA75307D3ST
OCR Text	... 0V to 10V VGS = 0V to 2V VDD = 30v, ID 15A, RL = 2.0 Ig(REF) = 1.0mA (Figure13) 1.2 4 nC nC 16 9 0.6 20 11 0.8 nC nC nC tON td(ON) tr td(O...12a ID = 7.5A ID = 4A 6 8 10 Qg, GATE CHARGE (nC) NOTE: Refer to Fairchild Application Notes A...
Description	15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs 15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs
File Size	214.68K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF6608
OCR Text	...HEXFET(R) Power MOSFET VDSS 30v RDS(on) max 9.0m@VGS = 10V 11m@VGS = 4.5V Qg 16nC ST Applicable DirectFET Outline and Substr...12a VGS = 10V ID, Drain-to-Source Current () T J = 150C 1.5 T J = 25C 10.0 (Normaliz...
Description	lHEXFET Power MOSFET lHEXFET功率MOSFET
File Size	175.33K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30ASTRR
OCR Text	..., VGS = 0V, TJ = 125C 100 VGS = 30v nA -100 VGS = -30v Max. Units Conditions --- S VDS = 50V, ID = 2.2A 23 I D = 3.6A 5.4 nC VDS = 480V 11 V...12a. Unclamped Inductive Test Circuit V (B R )D SS tp 100 0 25 50 75 100 125 150 Starting ...
Description	600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 600V Single N-Channel HEXFET Power MOSFET in a TO-262 package HEXFET? Power MOSFET Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A) 600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电 Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
File Size	145.74K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRFBC30A
OCR Text	..., VGS = 0V, TJ = 125C 100 VGS = 30v nA -100 VGS = -30v Max. Units Conditions --- S VDS = 50V, ID = 2.2A 23 ID = 3.6A 5.4 nC VDS = 480V 11 VG...12a. Unclamped Inductive Test Circuit V (B R )D SS tp 200 100 0 25 50 75 100 125 150 St...
Description	600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A) Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
File Size	99.53K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFP054V
OCR Text	...0V, See Fig. 6 and 13 --- VDD = 30v --- ID = 64A ns --- RG = 6.2 --- VGS = 10V, See Fig. 10 Between lead, 4.5 --- 6mm (0.25in.) nH G from p...12a. Unclamped Inductive Test Circuit V (B R )D SS tp 100 0 25 50 75 100 125 150 175 Start...
Description	Power MOSFET(Vdss=60V, Rds(on)=9.0mohm, Id=93A?) Power MOSFET(Vdss=60V, Rds(on)=9.0mohm, Id=93A)
File Size	155.92K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFP064V
OCR Text	...0V, See Fig. 6 and 13 --- VDD = 30v --- ID = 130A ns --- RG = 4.3 --- VGS = 10V, See Fig. 10 Between lead, 5.0 --- 6mm (0.25in.) nH G from ...12a. Unclamped Inductive Test Circuit V (B R )D SS tp 150 0 25 50 75 100 125 150 175 Start...
Description	From old datasheet system Power MOSFET(Vdss=60V, Rds(on)=5.5mohm, Id=130A)
File Size	152.71K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRFP22N60K
OCR Text	..., VGS = 0V, TJ = 125C 100 VGS = 30v nA -100 VGS = -30v Max. Units Conditions --- S VDS = 50V, ID = 13A 150 ID = 22A 45 nC VDS = 480V 76 VGS ...12a. Maximum Avalanche Energy Vs. Drain Current tp V(BR)DSS I AS Fig 12d. Unclamped Induct...
Description	SMPS MOSFET MOSFET的开关电
File Size	169.46K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRFP23N50L
OCR Text	...0V, TJ = 125C --- --- 100 VGS = 30v nA --- --- -100 VGS = -30v Min. 12 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- ...12a) ISD 23A, di/dt 430A/s, VDD V(BR)DSS, TJ 150C 2 www.irf.com IRFP23N50L 100 V...
Description	Power MOSFET(Vdss=500V, Rds(on)=0.190ohm, Id=23A) 功率MOSFET（减振钢板基本\u003d 500V及的Rdson）\u003d 0.190ohm，身份证\u003d 23A条）
File Size	102.63K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFPS40N60K
OCR Text	...0V, TJ = 125C --- --- 100 VGS = 30v nA --- --- -100 VGS = -30v Min. 21 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- ...12a) ISD 38A, di/dt 224A/s, VDD V(BR)DSS, TJ 150C R is measured at TJ approximately 90C...
Description	40 A, 600 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC HEXFETPower MOSFET HEXFET-R Power MOSFET
File Size	137.34K / 8 Page	View it Online	Download Datasheet

For 30v 12a Found Datasheets File :: 2200 Search Time::1.391ms
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