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Diodes Inc.
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| Part No. |
BAS70JW-7-F
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| OCR Text |
3 bas70jw www.diodes.com diodes incorporated bas70jw surface mount schottky barrier diode array features case: sot-363 case material: ...300s, i f = 1.0ma t p <300s, i f = 15ma reverse current (note 2) i r 100 na t p < 300s, v r = 50v ... |
| Description |
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAY
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| File Size |
60.23K /
3 Page |
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Diodes
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| Part No. |
BAS70-06T BAS70-04T BAS70-05T
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| OCR Text |
3 bas70t/ -04t/ -05t/ -06t www.diodes.com diodes incorporated low turn-on voltage fast switching pn junction guard ring for transie...300s, i f = 1.0ma t p <300s, i f = 15ma leakage current (note 2) i r 100 na t p < 300s, v r ... |
| Description |
Schottky Diodes
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| File Size |
72.16K /
3 Page |
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http://
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| Part No. |
BAS70-06T-7-F
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| OCR Text |
... lead free/rohs compliant (note 3) ? "green" device (note 4 and 5) mechanical data ? case: sot-523 ? case material: molded plast...300s , i f = 1.0ma t p <300s , i f = 15ma leakage current ... |
| Description |
SURFACE MOUNT SCHOTTKY BARRIER DIODE
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| File Size |
76.92K /
3 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDZ191P
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| OCR Text |
... = 25C (Note 1a) Ratings -20 8 -3 -15 1.5 0.9 -55 to +150 Units V V A W C
Operating and Storage Junction Temperature Range
Thermal Cha...300s, Duty cycle < 2.0%.
FDZ191P Rev.F (W)
2
www.fairchildsemi.com
www.DataSheet4U.com
... |
| Description |
P-Channel 1.5V PowerTrench WL-CSP MOSFET
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| File Size |
387.58K /
7 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDZ193P
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| OCR Text |
...e 1b) (Note 1a) Ratings -20 12 -3 -15 1.5 0.9 -55 to +150 Units V V A W C
Thermal Characteristics
RJA RJA Thermal Resistance, Junction t...300s, Duty cycle < 2.0%.
FDZ193P Rev.C1 (W)
2
www.fairchildsemi.com
P-Channel 1.7V Power... |
| Description |
P-Channel 1.7V PowerTrench WL-CSP MOSFET -20V, -1A, 90mohm
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| File Size |
207.49K /
7 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDZ493P
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| OCR Text |
...on) = 72m at VGS = -2.5V, ID = -3.6A Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of SSOT-6. Ultra-thin package: less than ...300s, Duty cycle < 2.0%.
FDZ493P Rev.B(W)
2
www.fairchildsemi.com
FDZ493P P-Channel 2.5V... |
| Description |
P-Channel 2.5V Specified PowerTrench BGA MOSFET -20V, -4.6A, 46mohm
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| File Size |
365.73K /
6 Page |
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IRF[International Rectifier]
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| Part No. |
IRF7210
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| OCR Text |
...able in Tape & Reel
S
1 2 3 4
8 7
A D D D D
S
S G
VDSS = -12V RDS(on) = 0.007
6 5
Description
These P-Channel MOSF...300s; duty cycle 2%.
2
www.irf.com
IRF7210
20
VGS -1.8V -1.6V -1.4V -1.2V -1.0V BOTTOM -... |
| Description |
HEXFET Power MOSFET
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| File Size |
138.32K /
7 Page |
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International Rectifier, Corp.
IRF[International Rectifier]
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| Part No. |
IRF7220
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| OCR Text |
...S G
2
7
VDSS = -14V
3
6
4
5
RDS(on) = 0.012W
T o p V ie w
Description
These P-Channel MOSFETs from Internatio...300s; duty cycle 2%.
2
www.irf.com
IRF7220
80
VG S - 4 .5V - 4.0 V - 3.0 V - 2.0 V - 1.8... |
| Description |
HEXFET Power MOSFET HEXFET功率MOSFET
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| File Size |
137.51K /
7 Page |
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it Online |
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NTE Electronics, Inc.
NTE[NTE Electronics]
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| Part No. |
NTE66
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| OCR Text |
...e Pulsed Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69mJ Avalanche Current...300s, Duty Cycle 2%. Note 2. Repetitive rating: Pulse width limited by max, junction temperature. N... |
| Description |
MOSFET N-Ch, Enhancement Mode High Speed Switch
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| File Size |
26.14K /
3 Page |
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it Online |
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