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| Part No. |
MT47H128M4CB-25ITB MT47H128M4CB-25EB MT47H128M4CB-25B MT47H128M4B6-3EATD MT47H128M4F6-25EATD MT47H64M8F6-37ELD MT47H64M8F6-3LATD MT47H32m16CC-25LITB
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| Description |
128M x 4 DDR dram, 0.4 ns, PBGA60
128M x 4 DDR dram, 0.45 ns, PBGA60
64M x 8 DDR dram, 0.5 ns, PBGA60
DDR dram, PBGA60
32m x 16 DDR dram, 0.4 ns, PBGA84
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| File Size |
9,285.20K /
139 Page |
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Integrated Device Technology, Inc.
IDT
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| Part No. |
IDT71V2548S133PF IDT71V2548S133BGI IDT71V2548SA133BG IDT71V2548S133BQ IDT71V2548S133PFI IDT71V2548SA133BQ IDT71V2548S133BQI IDT71V2548SA133BQI IDT71V2546S133BQI IDT71V2548SA150PFI IDT71V2548SA150BQ IDT71V2548S150PF IDT71V2546SA IDT71V2546SA100BQI IDT71V2548SA100PFI IDT71V2546SA133BQ IDT71V2546SA133BQI IDT71V2548S150BG IDT71V2548S150BGI IDT71V2548S150PFI IDT71V2546S150PFI IDT71V2546S150BQ IDT71V2546S150BQI IDT71V2546SA100PFI IDT71V2546S100PFI8 IDT71V2546S100PF8 IDT71V2546SA150PF IDT71V2546SA150PFI
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| Description |
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, burst Counter Pipelined Outputs 128K x 36 ZBT SRAM, 4.2 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, burst Counter Pipelined Outputs 256K x 18 ZBT SRAM, 3.8 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, burst Counter Pipelined Outputs 256K x 18 ZBT SRAM, 3.8 ns, PQFP100
25V N-Channel PowerTrench MOSFET; Package: TO-251(IPAK); No of Pins: 3; Container: Rail 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, burst Counter Pipelined Outputs 128K x 36 ZBT SRAM, 5 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, burst Counter Pipelined Outputs 128K的36256 × 18 3.3同步ZBT SRAM2.5VI / O的脉冲计数器输出流水
128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O/ burst Counter Pipelined Outputs
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/2.5V I/O
3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O
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| File Size |
1,009.24K /
28 Page |
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it Online |
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White Electronic Designs Corporation
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| Part No. |
EDI2AG272129V9D1 EDI2AG272129V10D1 EDI2AG272129V12D1 EDI2AG272129V85D1
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| Description |
2x128Kx72, 3.3V,9ns, Sync/Sync burst SRAM Module(2x128Kx72, 3.3Vns,同步/同步脉冲静态RAM模块)
2x128Kx72, 3.3V,10ns, Sync/Sync burst SRAM Module(2x128Kx72, 3.3V0ns,同步/同步脉冲静态RAM模块)
2x128Kx72, 3.3V,12ns, Sync/Sync burst SRAM Module(2x128Kx72, 3.3V2ns,同步/同步脉冲静态RAM模块)
2x128Kx72,, 3.3V,8.5ns, Sync/Sync burst SRAM Module(2x128Kx72, 3.3V.5ns,同步/同步脉冲静态RAM模块)
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| File Size |
259.95K /
11 Page |
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Numonyx B.V
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| Part No. |
M36W0R6050B3 M36W0R6050B3ZAQE M36W0R6050B3ZAQF M36W0R6050T3 M36W0R6050T3ZAQE M36W0R6050T3ZAQF M36W0R6040B3 M36W0R6040B3ZAQE M36W0R6040T3ZAQE M36W0R6040T3ZAQF M36P0R9070E0 M36P0R9070E0ZAC M36P0R9070E0ZACE M36P0R9070E0ZACF M36W0R6040B3ZAQF M36W0R6040T3
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| Description |
SPECIALTY MEMORY CIRCUIT, PBGA107
64-Mbit (4 Mbits 隆驴16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 隆驴16) or 32-Mbit (2 Mbits x16) PSRAM MCP
512 Mbit (x16, Multiple Bank, Multi-Level, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8V supply, Multi-Chip Package
64-Mbit (4 Mbits 】16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit 】16) or 32-Mbit (2 Mbits x16) PSRAM MCP
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| File Size |
430.64K /
23 Page |
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it Online |
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Cypress Semiconductor, Corp.
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| Part No. |
CY7C1568KV18-550BZxC
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| Description |
72-Mbit DDR-II SRAM 2-Word burst Architecture (2.5 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M x 18 DDR SRAM, 0.45 ns, PBGA165
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| File Size |
601.94K /
29 Page |
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it Online |
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Price and Availability
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