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				ISSI[Integrated Silicon Solution, Inc]
Part No.	IS42S16160A-6TL IS42S16160A-7T IS42S83200A IS42S83200A-75T IS42S83200A-75TL IS42S16160A-7TL IS42S16160A-6T
OCR Text	... IS42S83200A is a synchronous 256Mb SDRAM and is organized as 4-bank x 8,388,608-word x 8-bit; and IS42S16160A is organized as 4-bank x 4,194,304-word x 16-bit. All inputs and outputs are referenced to the rising edge of CLK. IS42S8320...
Description	256 MB SYNCHRONOUS DRAM
File Size	941.26K / 49 Page	View it Online	Download Datasheet

				ISSI[Integrated Silicon Solution, Inc]
Part No.	IS42S16160B IS42S16160B-6T IS42S16160B-7BL IS42S16160B-7TL IS42S16160B-7TLI IS42S83200B-7T IS42S83200B-7TI IS42S83200B-7TL IS42S83200B-7TLI IS42S83200B-6T IS42S83200B-6TL IS42S83200B IS42S16160B-7TI IS42S16160B-6TL IS42S16160B-7B IS42S16160B-7BI IS42S16160B-7BLI IS42S16160B-7T
OCR Text	...3V 3.3V 3.3V OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 256Mb SDRAM is organized as follows. I...
Description	32MEG X 8, 16MEG X16 256-MBIT SYNCHRONOUS DRAM
File Size	628.55K / 62 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S560432E-NC75 K4S560832E-NC75 K4S560832E-NL75 K4S561632E K4S560432E-NC K4S560432E-NL75
OCR Text	256Mb E-die (x4, x8 x8) CMOS SDRAM 256Mb E-die SDRAM Specification 54pin sTSOP-II Revision 1.1 February. 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February, 200...
Description	256Mb E-die SDRAM Specification 54pin sTSOP-II 256Mb的电子芯片内存规4pin sTSOP -
File Size	180.64K / 13 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
Part No.	K4S560432E-TC K4S560432E-TC75 K4S561632E-TL75 K4S560432E-TL75 K4S560832E-TC75 K4S560832E-TL75 K4S561632E K4S561632E-TC60 K4S561632E-TC75 K4S561632E-TL60
OCR Text	256Mb E-die (x4, x8, x16) CMOS SDRAM 256Mb E-die SDRAM Specification Revision 1.5 May 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.5 May 2004 SDRAM 256Mb E-die (x...
Description	256Mb E-die SDRAM Specification 256Mb的电子芯片内存规
File Size	194.54K / 14 Page	View it Online	Download Datasheet

				HYNIX[Hynix Semiconductor]
Part No.	HY5DU561622CT-D4 HY5DU56422CT-D4 HY5DU56422CT-D43 HY5DU56422CT-D HY5DU56822CT-D43 HY5DU56822CT-D HY5DU56822CT-D4 HY5DU561622CT-D HY5DU561622CT-D43 HY5DU561622CTP-33
OCR Text	...y and high bandwidth. The Hynix 256Mb DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of...
Description	DDR SDRAM - 256Mb 256M-P DDR SDRAM
File Size	229.22K / 34 Page	View it Online	Download Datasheet

				HYNIX[Hynix Semiconductor]
Part No.	HY5DU561622ELFP-J HY5DU561622EFP HY5DU561622ELFP-D43 HY5DU561622ELFP HY5DU561622ELFP-H HY5DU561622ELFP-K HY5DU561622ELFP-L HY5DU56822ELFP-L HY5DU56822EFP HY5DU56822EFP-D43 HY5DU56822EFP-H HY5DU56822EFP-J HY5DU56822EFP-K HY5DU56822EFP-L HY5DU56822ELFP HY5DU56822ELFP-D43 HY5DU56822ELFP-H HY5DU56822ELFP-J HY5DU56822ELFP-K
OCR Text	256Mb DDR SDRAM HY5DU56822E(L)FP HY5DU561622E(L)FP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent l...
Description	256Mb DDR SDRAM
File Size	241.02K / 29 Page	View it Online	Download Datasheet

				INFINEON[Infineon Technologies AG]
Part No.	HYB25D256800BTL-5A HYB25D256800BT HYB25D256800BT-5A HYB25D256160BT-5A HYB25D256160BTL-5A HYB25D256160BT-5 HYB25D256160BTL-5 HYB25D256800BT-5 HYB25D256800BTL-5
OCR Text	...P66 package Description The 256Mb DDR SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM. The 256Mb DDR SDRAM uses a double-data-rate architecture to ach...
Description	DDR SDRAM Components - 256Mbit (32Mx8) DDR400 (3-3-3) DDR SDRAM Components - 256Mbit (16Mx16) DDR400 256MBit Double Data Rata SDRAM
File Size	327.59K / 29 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	K4H561638H-UI_PCC K4H561638H-UI_PB3 K4H561638H-UI_PB0 K4H561638H-ZI_PB3 K4H561638H K4H561638H-ZI_PB0
OCR Text	256Mb H-die DDR SDRAM Specification 66 TSOP-II & 60 FBGA Industrial Temp. -40 to 85C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE C...
Description	256Mb H-die DDR SDRAM Specification
File Size	405.70K / 24 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers Electronic Theatre Controls, Inc. ETC
Part No.	VT8363
OCR Text	...port up to 1.5 GB memory space (256Mb DRAM technology) - Flexible row and column addresses - 64-bit data width and 3.3V DRAM interface - Programmable I/O drive capability for MA, command, and MD signals - Two-bank interleaving for 16Mbit SD...
Description	KT133 Athlon North Bridge
File Size	218.49K / 9 Page	View it Online	Download Datasheet

				Micron Technology
Part No.	MT9VDDT1672A MT9VDDT3272A
OCR Text	256MB (x72, ECC) 184-Pin DDR SDRAM DIMM DDR SDRAM DIMM Features * JEDEC-standard 184-pin dual in-line memory module (DIMM) * Fast data transfer rates PC1600, PC2100, or PC2700 * Utilizes 200 MT/s, 266 MT/s, and 333MT/s DDR SDRAM compon...
Description	DDR SDRAM DIMM
File Size	492.53K / 29 Page	View it Online	Download Datasheet

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