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21M350 15622I MW418 72005 2SJ547 OM6022SC HYA156 ZN1036D
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    ZX5T949GTA ZX5T949G-16

Diodes Incorporated
Part No. ZX5T949GTA ZX5T949G-16
OCR Text ...on (w) 100 1m 10m 100m 1 10 100 1k 0 10 20 30 40 see note (5) transient thermal impedance d=0.5 d=0.2 d=0.1 single pulse d=0.05 thermal resistance (c/w) pulse width (s) 100 1m 10m 100m 1 10 100 1k 1 10 100 single pulse. t amb =25c see note ...
Description PNP LOW SATURATION TRANSISTOR

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    Integrated Device Techn...
Part No. QS4A215Q1G8
OCR Text ...ns switching time of mux r l = 1k , c l = 100pf 0.5 ? 6.6 ns sx to yx (see transition time) t on( en ) enable turn-on time r l = 1k , c l = 100pf 0.5 ? 6 ns ex to yx (see switching time) t off( en ) enable turn-off time r l = 1k , ...
Description HIGH-PERFORMANCE CMOS SIX CHANNEL SP4T MUX/DEMUX

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    24C21 AT24C21 AT24C21-10PC-2.5 AT24C21-10PI-2.5 AT24C21-10SC-2.5 AT24C21-10SI-2.5

Atmel Corp.
ATMELCorporation
ATMEL[ATMEL Corporation]
Part No. 24C21 AT24C21 AT24C21-10PC-2.5 AT24C21-10PI-2.5 AT24C21-10SC-2.5 AT24C21-10SI-2.5
OCR Text ...ckages 2-Wire Serial EEPROM 1K (128 x 8) * Description The AT24C21 provides 1024 bits of serial electrically erasable and programmable read only memory (EEPROM) organized as 128 words of 8 bits each. The device is optimized for u...
Description DIODE ZENER 5.6V 120MW SSSMINI2
2-WireSerialEEPROM
2-Wire Serial EEPROM

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    Integrated Device Techn...
Part No. QS4A210QG QS4A210QG8
OCR Text ...ns switching time of mux r l = 1k , c l = 100pf 0.5 ? 6.6 ns sx to y (see transition time) t on( en ) enable turn-on time r l = 1k , c l = 100pf 0.5 ? 6 ns ea = eb to y (see switching time) t off( en ) enable turn-off time r l = 1...
Description HIGH-PERFORMANCE CMOS TWO CHANNEL SP4T MUX/DEMUX

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    2SK435 2SK435E

Hitachi Semiconductor
Part No. 2SK435 2SK435E
OCR Text ... 5 V, ID = 1 mA, f = 1kHz, Rg = 1k 1. The 2SK435 is grouped by I DSS as follows. B 6 to 14 C 12 to 22 D 18 to 30 E 26 to 40 2 2SK435 Maximum Channel Dissipation Curve 400 Channel Power Dissipation Pch (mW) 20 VGS = 0V Typical ...
Description Silicon N Channel MOS FET
Silicon N-Channel Junction FET
TRANSISTOR | JFET | N-CHANNEL | 22V V(BR)DSS | 40MA I(DSS) | TO-92

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    Integrated Device Techn...
Part No. QS4A205QG QS4A205QG8
OCR Text ...ching time of mux s to y r l = 1k , c l = 100pf 0.5 ? 6.6 ns t on( en ) enable turn-on time, e to y r l = 1k , c l = 100pf 0.5 ? 6 ns t off( en ) enable turn-off time, e to y r l = 1k , c l = 100pf 0.5 ? 6 ns t pd group delay (...
Description HIGH-PERFORMANCE CMOS ANALOG FOUR-CHANNEL SPDT MUX/DEMUX

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    Integrated Device Techn...
Part No. QS4A105QG8
OCR Text ... e ) enable turn-on time r l = 1k , c l = 100pf 0.5 ? 6.5 ns e to ax, bx, cx, or dx (see switching time) t off( e ) enable turn-off time r l = 1k , c l = 100pf 0.5 ? 6 ns e to ax, bx, cx, or dx (see switching time) t pd group delay ...
Description QUICKSWITCH PRODUCTS HIGH-PERFORMANCE CMOS TWO CHANNEL 4PST SWITCH

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    Integrated Device Techn...
Part No. QS4A101QG8
OCR Text ... e ) enable turn-on time r l = 1k , c l = 100pf 0.5 ? 6.5 ns e to a, b (see switching time) t off( e ) enable turn-off time r l = 1k , c l = 100pf 0.5 ? 6 ns e to a, b (see switching time) t pd group delay (2,4a) r l = 1k , c l =...
Description QUICKSWITCH PRODUCTS HIGH-PERFORMANCE CMOS ANALOG FOUR-CHANNEL SPST SWITCH WITH INDIVIDUAL ENABLES

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    Renesas Electronics Corporation
Part No. EL8100ISZ EL8100ISZ-T13 EL8100ISZ-T7 EL8100IWZ-T7 EL8100IWZ-T7A
OCR Text ...v out = +1.5v to +3.5v, r l = 1k ? to gnd 75 90 db v out = +1.5v to +3.5v, r l = 150 ? to gnd 80 db output characteristics r out output resistance a v = +1 30 m ? v op positive output voltage swing r l = 1k ? 4.85 4.9 v r l = 150...
Description 200MHz Rail-to-Rail Amplifiers

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    Nell Semiconductor Co.,...
Part No. 4PT08AT-03 4PT08AT-05 4PT08AT-06 4PT08AT-08
OCR Text ...5c d drm l gk j i = 50ma, r = 1k t gk i = 1ma, r = 1k g gk v = 67% v r = 1k, t = 125c d drm gk j , 0.8 0.1 5 6 10 a vv ma v/s i = 8a, t = 380 s t p t = 125c j t = 25c j t = 25c j v a electrical specifications test cond...
Description Sensitive gate SCRs

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