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  0.510 Datasheet PDF File

For 0.510 Found Datasheets File :: 13641    Search Time::1.484ms    
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    AN8839 AN8839NSB

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. AN8839 AN8839NSB
OCR Text ...with fewer external parts. 1 (0.45) Unit: mm 28 0.30.1 s Features * Operating supply voltage VCC = 2.4 V to 5.5 V * Balance adjus...510 10.9 1.6 2.9 Unit -710 9.3 - 0.6 1.0 mV dB dB dB A 176 mV[p-p] 0.4 -11 0.4 V V ...
Description DIODE ZENER TRIPLE ISOLATED 200mW 20Vz 6.2mA-Izt 0.05 0.1uA-Ir 15 SOT-363 3K/REEL
CD-DA head amplifier IC for 3-beam system optical pick-up

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    AN8882 AN8882SB

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. AN8882 AN8882SB
OCR Text ...s speed or more. 15.20.3 36 19 0.2 +0.10 -0.05 Unit: mm 11.930.3 8.40.3 1 18 1.300.25 2.850.2 1.300.25 s Features ...510 kHz VCC1 = 5 V, VCC2 = 3.3 V VGC = VREF2 +0.3 V GRADA1 VCC1 = 5 V, VCC2 = 3.3 V VEQCTL = VREF...
Description Head amplifier IC for CD-ROM drive for 32 times speed or more

File Size 67.96K  /  7 Page

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    APT5014 APT5014BLL APT5014SLL

Advanced Power Technology
Part No. APT5014 APT5014BLL APT5014SLL
OCR Text 0.140W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduct...510 10.2 THERMAL CHARACTERISTICS Symbol RqJC RqJA Characteristic Junction to Case Junction to Am...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

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    APT5015BLC

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
Part No. APT5015BLC
OCR Text 0.150 W POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Low...510 Reverse Recovery Charge (IS = -ID[Cont.], dl S /dt = 100A/s) 10.2 THERMAL CHARACTERISTI...
Description POWER MOS VI 500V 32A 0.150 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET

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    APT5015 APT5015BVR

ADPOW[Advanced Power Technology]
Part No. APT5015 APT5015BVR
OCR Text 0.150 POWER MOS V (R) Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology m...510 10.2 (Body Diode) (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dl S...
Description POWER MOS V 500V 32A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 60.16K  /  4 Page

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    APT5016BLL APT5016SLL APT5014 APT5014BLL APT5014SLL APT5016

ADPOW[Advanced Power Technology]
Part No. APT5016BLL APT5016SLL APT5014 APT5014BLL APT5014SLL APT5016
OCR Text 0.160W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduct...510 10.0 THERMAL CHARACTERISTICS Symbol RqJC RqJA Characteristic Junction to Case Junction to Am...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

File Size 51.47K  /  2 Page

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    APT5017BLC APT5017SLC APT10086BLC APT10086SLC

ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT5017BLC APT5017SLC APT10086BLC APT10086SLC
OCR Text 0.170W POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lowe...510 10.2 THERMAL CHARACTERISTICS Symbol RqJC RqJA Characteristic Junction to Case Junction to Am...
Description POWER MOS VI 500V 30A 0.170 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.

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    APT5017BVR

ADPOW[Advanced Power Technology]
Part No. APT5017BVR
OCR Text 0.170 POWER MOS V (R) Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology m...510 10.2 (Body Diode) (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dl S...
Description POWER MOS V 500V 30A 0.170 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 60.07K  /  4 Page

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    APT5017 APT5017SVR

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT5017 APT5017SVR
OCR Text 0.170 POWER MOS V (R) Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology m...510 10.2 (Body Diode) (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dl S...
Description POWER MOS V 500V 30A 0.170 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 63.55K  /  4 Page

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    APT5018BFLL APT5018SFLL

ADPOW[Advanced Power Technology]
Part No. APT5018BFLL APT5018SFLL
OCR Text 0.180W POWER MOS 7TM FREDFET BLL D3PAK TO-247 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancemen...510 36 63 9 27 13 9 7 35 nC Gate-Source Charge Turn-on Delay Time Rise Time Gate-Drain ("Mill...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

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