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SavantIC
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| Part No. |
C2429
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| OCR Text |
...olt a ge i e =1 m a ; i c = 0 7 v v ce s a t c ol l e c t or - e m i t t er s at ur at i o n v ol t age i c = 10a ; i b = 2a 0. 45 1. 0 v v bes a t b as e- e m i t t er s at ur at i o n v olt a g e i c = 10a ; ... |
| Description |
2SC2429
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| File Size |
224.11K /
3 Page |
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Advanced Power Electronics
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| Part No. |
AP4407GM-HF-3
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| OCR Text |
... - 3 0 v 2 5 v at t =25 c ...10a t a =25 o c 0.60 0.80 1.00 1.20 1.40 1.60 1.80 -50 0 50 100 150 t j , junction temperature ( o ... |
| Description |
P-channel Enhancement-mode Power MOSFET
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| File Size |
143.96K /
5 Page |
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it Online |
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TIANBO GANGLIAN ELECTRONICS
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| Part No. |
TRA1
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| OCR Text |
...? ) nominalvoltage (vdc) 0.54w 0.72w max operate voltage vdc min releasevoltage vdc max applicablevoltage vdc 3 17 13 2.4 0.15 3.9 5 46 35 4 0.25 6.5 6 67 50 4.8 0.3 7.8 9 150 110 7.2 0.45 11.7 12 270 200 ... |
| Description |
Relays
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| File Size |
106.18K /
3 Page |
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it Online |
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LITE-ON SEMICONDUCTOR CORP
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| Part No. |
LT4420C
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| OCR Text |
...50 ) t a =70 i d 10.8 7.0 a pulsed drain current i dm 50 a continuous source current (diode conduction) i s 2.7 1.36 a ...10a 17 s v sd diode forward voltage i s =2.3a, v gs =0v 0.76 1.1 v dynamic qg... |
| Description |
9.5 A, 30 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
577.84K /
6 Page |
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it Online |
Download Datasheet |
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FAIRCHILD SEMICONDUCTOR CORP
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| Part No. |
FGA90N30
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| OCR Text |
... pulse width = 100usec , duty = 0. 2 * ic_pulse limited by max tj thermal characteristics g c e to-3p symbol description fga90n30 units v ce...10a case tem perature, t c ( o c) collector-emitter voltage, v ce [v] 4 8 12 16 20 0 1 2 3 4 ... |
| Description |
300V PDP IGBT
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| File Size |
945.25K /
10 Page |
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it Online |
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TY Semicondutor
TY Semiconductor Co., Ltd
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| Part No. |
KDB2670 FDB2670 KDB2670FDB2670
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| OCR Text |
0.1 -0.1 1.27 +0.1 -0.1 1.27 +0.1 -0.1 5.08 +0.1 -0.1 5.60 0.1max 8.7 +0.2 -0.2 5.28 +0.2 -0.2 2.54 +0.2 -0.2 2.54 15.25 +0.2 -0.2 4.57 +0.2...10a 98 130 v gs =10v,i d =10a,t j =125 205 285 on?state drain current i d(on) v gs =10v,v ds =10v 20... |
| Description |
N-Channel PowerTrench MOSFET
19 A, 200 V. RDS(ON) = 130 m VGS = 10 V Fast switching speed Low gate charge
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| File Size |
261.48K /
2 Page |
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it Online |
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