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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF5S19090HSR3 MRF5S19090HR3
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| OCR Text |
...th = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 14.5 dB Drain Efficiency -- 25.8% IM3 @ 2.5 MHz Offset -- - 37 dBc ...080 Microstrip 0.450 x 0.080 Microstrip 0.140 x 0.080 Microstrip 0.525 x 0.080 Microstrip 0.636 x 0.... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
413.60K /
12 Page |
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FREESCALE SEMICONDUCTOR INC
MOTOROLA[Motorola, Inc]
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| Part No. |
MRF5S19090LSR3 MRF5S19090LR3
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| OCR Text |
...with frequencies up to 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. * Typical 2 - Carrier N - CDMA Perfo...080 Microstrip x 0.080 Microstrip x 0.080 Microstrip x 0.080 Microstrip x 0.141 Microstrip x 0.050 M... |
| Description |
L BAND, Si, N-CHANNEL, RF POWER, MOSFET
1990 MHz, 18 W AVG 2 x N-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs
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| File Size |
409.09K /
12 Page |
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Freescale (Motorola)
MOTOROLA[Motorola, Inc]
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| Part No. |
MRF5S19100HSR3 MRF5S19100HD MRF5S19100HR3
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| OCR Text |
...with frequencies up to 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. * Typical 2 - Carrier N - CDMA Perfo...080 Microstrip x 0.080 Microstrip x 0.080 Microstrip x 0.141 Microstrip x 0.050 Microstrip x 1.299 M... |
| Description |
1990 MHz, 22 W Avg., 28 V, 2 x N–CDMA Lateral N–Channel RF Power MOSFET
The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
723.32K /
12 Page |
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it Online |
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AUO
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| Part No. |
T315HW07-V8
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| OCR Text |
0 ?copyright auo optronics corp. 2009 all rights res erved. page 1 / 31 model name: t315hw...080 pixels, and diagonal size of 32.0 inch. this modul e supports 1,920x1,080 mode. each pixel is... |
| Description |
TFT LCD Module
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| File Size |
6,459.64K /
31 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF5S21045NR1
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| OCR Text |
...idth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 14.5 dB Drain Efficiency -- 25.5% IM3 @ 10 MHz Offset -- - 37 dBc i...080 x 0.080 x 0.080 x 0.080 x 1.000 x 0.080
Microstrip Microstrip Microstrip Microstrip Microstri... |
| Description |
RF Power Field Effect Transistors
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| File Size |
551.60K /
16 Page |
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it Online |
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Freescale (Motorola)
FREESCALE[Freescale Semiconductor, Inc]
飞思卡尔半导体(中国)有限公司
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| Part No. |
MRF5S21090HSR3 MRF5S21090HR3
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| OCR Text |
... 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 14.5 dB Drain Efficiency -- 26% IM3 @ 10 MHz Offset -- - 37.5 dBc @...080 Microstrip 0.130 x 0.080 Microstrip 0.230 x 0.080 Microstrip 0.347 x 0.208 Microstrip 0.090 x 0.... |
| Description |
To be Used in class AB for PCN-PCS/cellularradio and WLL applications.
XTAL MTL T/H HC49/U
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| File Size |
374.07K /
12 Page |
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it Online |
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